Stacey F. Bent - Publications, H-index & Citations

Stacey F. Bent

stanford university

81H指数

431论文数

2.6W被引数

收录论文 235

发表时间

Ternary and Quaternary Nickel-Iron-Oxide-Based Thin Films as Oxygen Evolution Reaction Catalysts in Alkaline Media 三元和四元镍铁氧化物基薄膜作为碱性介质中氧析出反应催化剂

ACS Catalysis

IF13.1

2026-04-10

PREAI

Johanna Schröder; Giulio D’Acunto; K. Alex A. Persson; Ashton M. Aleman; Elisa L. Ponte; Stacey F. Bent; Thomas F. Jaramillo

Effect of molecular layer deposition parameters on the electron beam resist properties of hafnicone hybrid films 分子层沉积参数对铪基杂化薄膜电子束抗蚀剂性能的影响

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

IF2.1

2026-03-01

PREAI

Lewis, Jacqueline; Than, Long Viet; Bent, Stacey F.

Aromatic organic-tin hybrid films as electron beam resists 芳香族有机锡杂化薄膜作为电子束抗蚀剂

Applied Surface Science

IF6.9

2026-03-01

PREAI

Jacqueline Lewis; Long Viet Than; Stacey F. Bent

Anhydrous Atomic Layer Deposition of HfO2: Mechanistic Analysis of the Tetrakis(dimethylamido)hafnium (TDMAH)-O2 Process

LANGMUIR

IF3.9

2025-12-01

PREAI

Kim, Miso; Seo, Seunggi; Jeon, Woong Pyo; Lee, Yujin; Lee, Jinwoo; Kim, Hyungjun; Shong, Bonggeun; Bent, Stacey F.

Cryogenic X-ray photoelectron spectroscopy for battery interfaces 低温X射线光电子能谱用于电池界面

Nature

IF48.5

2025-10-22

PREAI

Sanzeeda Baig Shuchi; Giulio D’Acunto; Philaphon Sayavong; Solomon T. Oyakhire; Kenzie M. Sanroman Gutierrez; Juliet Risner-Jamtgaard; Il Rok Choi; Yi Cui; Stacey F. Bent

Role of Precursor Miscibility in Area-Selective Atomic Layer Deposition 前驱体混溶性在区域选择性原子层沉积中的作用

Advanced Materials

IF26.8

2025-08-20

PREAI

Alexander Shearer; Yukio Cho; Andreas Werbrouck; Amnon Rothman; Tzu-Ling Liu; Stacey F Bent

Atomic layer deposition of nickel sulfide thin films and their thermal and electrochemical stability 硫化镍薄膜的原子层沉积及其热稳定性和电化学稳定性

J. Mater. Chem. A

IF9.5

2025-08-05

OAAI

Miika Mattinen; Johanna Schröder ‡; Timo Hatanpää; Georgi Popov; Kenichiro Mizohata; Markku Leskelä; Thomas F. Jaramillo; Michaela Burke Stevens; Stacey F. Bent; Mikko Ritala

Crystalline 1D Coordination Polymer Inhibitor Layer Leads to Vertical Sidewalls in Selectively Deposited ZnO on Nanoscale Patterns 晶态一维配位聚合物抑制剂层导致选择性沉积的ZnO在纳米尺度图案上形成垂直侧壁

ACS NANO

IF16

2025-03-21

PREAI

Shearer, A; Cho, YK; Kim, M; Werbrouck, A; Liu, TL; Takacs, CJ; Shong, B; Bent, SF

Enhanced ALD Nucleation on Polymeric Separator for Improved Li-S Batteries 增强聚合物隔膜上的ALD成核以提高锂硫电池性能

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2025-01-15

PREAI

D'Acunto, G; Shuchi, SB; Zheng, XL; Than, LV; Geierstanger, EM; Harake, M; Cui, AY; Werbrouck, A; Mattinen, M; Cui, Y; Bent, SF

Role of Molecular Orientation: Comparison of Nitrogenous Aromatic Small Molecule Inhibitors for Area-Selective Atomic Layer Deposition

CHEMISTRY OF MATERIALS

IF7

2024-12-18

PREAI

Shearer, Alexander; Pieck, Fabian; Yarbrough, Josiah; Werbrouck, Andreas; Tonner-Zech, Ralf; Bent, Stacey F.

Dynamics of precatalyst conversion and iron incorporation in nickel-based alkaline oxygen evolution reaction catalysts 镍基碱性析氧反应催化剂中预催化剂转化和铁掺入的动力学

CELL REPORTS PHYSICAL SCIENCE

IF7.3

2024-11-01

OAAI

Mattinen, Miika; Schroder, Johanna; D'Acunto, Giulio; Ritala, Mikko; Jaramillo, Thomas F.; Stevens, Michaela Burke; Bent, Stacey F.

Deconvoluting Effects of Lithium Morphology and SEI Stability at Moderate Current Density Using Interface Engineering 使用界面工程在中等电流密度下对锂形态和SEI稳定性的反卷积效应

ADVANCED MATERIALS INTERFACES

IF4.4

2024-10-10

OAAI

Shuchi, Sanzeeda Baig; Oyakhire, Solomon T.; Zhang, Wenbo; Sayavong, Philaphon; Ye, Yusheng; Chen, Yuelang; Yu, Zhiao; Cui, Yi; Bent, Stacey F.

Unveiling the Stability of Encapsulated Pt Catalysts Using Nanocrystals and Atomic Layer Deposition

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

IF15.6

2024-08-13

PREAI

Liccardo, Gennaro; Cendejas, Melissa C.; Mandal, Shyama C.; Stone, Michael L.; Porter, Stephen; Nhan, Bang T.; Kumar, Abinash; Smith, Jacob; Plessow, Philipp N.; Cegelski, Lynette; Osio-Norgaard, Jorge; Abild-Pedersen, Frank; Chi, Miaofang; Datye, Abhaya K.; Bent, Stacey F.; Cargnello, Matteo

HfO2 Area-Selective Atomic Layer Deposition with a Carbon-Free Inhibition Layer

CHEMISTRY OF MATERIALS

IF7

2024-04-15

PREAI

Lee, Yujin; Seo, Seunggi; Shearer, Alexander B.; Werbrouck, Andreas; Kim, Hyungjun; Bent, Stacey F.

Understanding chemical and physical mechanisms in atomic layer deposition (Vol 152, 040902, 2020)

JOURNAL OF CHEMICAL PHYSICS

IF3.1

2024-02-26

OAAI

Richey, Nathaniel E.; de Paula, Camila; Bent, Stacey F.

Recovery of isolated lithium through discharged state calendar ageing 通过放电状态日历老化回收孤立的锂

NATURE

IF48.5

2024-02-07

PREAI

Zhang, Wenbo; Sayavong, Philaphon; Xiao, Xin; Oyakhire, Solomon T.; Shuchi, Sanzeeda Baig; Vila, Rafael A.; Boyle, David T.; Kim, Sang Cheol; Kim, Mun Sek; Holmes, Sarah E.; Ye, Yusheng; Li, Donglin; Bent, Stacey F.; Cui, Yi

Interfacial engineering of lithium metal anodes: what is left to uncover?锂金属阳极的界面工程: 还有什么需要揭开？

ENERGY ADVANCES

IF4.3

2024-01-01

OAAI

Oyakhire, Solomon T.; Bent, Stacey F.

Enhanced Growth in Atomic Layer Deposition of Ruthenium Metal: The Role of Surface Diffusion and Nucleation Sites

CHEMISTRY OF MATERIALS

IF7

2023-12-26

PREAI

Rothman, Amnon; Werbrouck, Andreas; Bent, Stacey F.

Area-Selective Atomic Layer Deposition for Resistive Random-Access Memory Devices 用于电阻式随机存取存储器器件的区域选择性原子层沉积

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-09-01

PREAI

Oh, Il-Kwon; Khan, Asir Intisar; Qin, Shengjun; Lee, Yujin; Wong, H. -S. Philip; Pop, Eric; Bent, Stacey F.

Proximity Matters: Interfacial Solvation Dictates Solid Electrolyte Interphase Composition 邻近问题: 界面溶剂化决定了固体电解质相间的组成

NANO LETTERS

IF9.1

2023-08-11

PREAI

Oyakhire, Solomon T.; Liao, Sheng-Lun; Shuchi, Sanzeeda Baig; Kim, Mun Sek; Kim, Sang Cheol; Yu, Zhiao; Vila, Rafael A.; Rudnicki, Paul E.; Cui, Yi; Bent, Stacey F.

研究方向