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Seongil Im

yonsei university

44H指数
251论文数
7.6K被引数
收录论文 115
发表时间
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Lithography-Patterned Nafion Interlayers Enable High-Injection Contacts in p-MoTe2 FETs光刻图案化Nafion中间层使p-MoTe2 FETs实现高注入接触
errACS Applied Materials & Interfaces
IF0
err2026-02-27
err0
PREAI
errSewoong Oh; Jeehong Park; Yeonjin Yi; Seongil Im; Ji Hoon Park
err分享
err收藏
Above 300 GHz Ultrafast Cutoff Frequency Achieved via Air Gap-Induced Capacitance in van der Waals ReSe2 Schottky Diodes300 GHz以上超高速截止频率通过范德华ReSe2肖特基二极管中的空气隙诱导电容实现
errAdvanced Functional Materials
IF19
err2026-02-10
err0
PREAI
errSungjae Hong; Gyu Lee; Hyun-Jung Kim; Haneul Woo; Byong-Joo Lee; Jaeho T. Im; Dahl-Young Khang; Jong-Gwan Yook; Seongil Im
err分享
err收藏
Organic Interface Engineering in Transition Metal Dichalcogenide Electronics: Overcoming Contact, Doping, and Stability Challenges过渡金属二硫属化物电子学中的有机界面工程：克服接触、掺杂和稳定性挑战
errTRANSACTIONS ON ELECTRICAL AND ELECTRONIC MATERIALS
IF1.9
err2025-12-01
err0
PREAI
errJeong, Yeonsu; Park, Ji Hoon; Im, Seongil
err分享
err收藏
Identification of phonon vibrational modes for the layered Ta2Se metal-rich chalcogenide层状富金属钽硒化物Ta2Se中声子振动模式的识别
errnpj 2D Materials and Applications
IF8.8
err2025-11-21
err0
errOAAI
errJeongmin Lee; Hyojung Kim; Jaekak Yoo; Byeongho Lee; Heesun Bae; Seongil Im; Seung Mi Lee; Hye Min Oh; Kimoon Lee
err分享
err收藏
Defect-Induced Subgap State Engineering in Neuromorphic Metal-Oxide Phototransistors for In-Sensor Color Processing缺陷诱导的子能隙态工程在用于传感器内颜色处理的神经形态金属氧化物光电晶体管中的应用
errMater. Horiz.
IF0
err2025-09-24
err0
PREAI
errEun Chong Ju; Dong Hwan Byeon; Jong Min Lee; YuJung Cha; Hyung Gon Shin; Seongil Im; Jeong-Wan Jo; Yong-Hoon Kim; Sung Kyu Park; Sung Woon Cho
err分享
err收藏
Nonmelting Disordering Facilitated by Electron Delocalization电子离域作用促进的非熔化无序化
errACS NANO
IF16
err2025-02-26
err0
PREAI
errKim, D; Kim, S; Jung, J; Kim, J; Choi, S; Schon, CF; Lee, CW; Lim, H; Jeong, J; Yu, SHY; Jeong, Y; Lee, HJ; Kim, S; Nam, D; Eom, I; Jang, D; Kim, KS; Im, S; Han, S; Kim, H; Cho, MH
err分享
err收藏
Reconfiguring van der Waals Metal-Semiconductor Contacts via Selenium Intercalation/Deintercalation Post-Treatment通过硒插层/脱插层后处理重构范德华金属-半导体接触
errACS NANO
IF16
err2024-12-21
err0
errOAAI
errKwon, G; Kim, HS; Jeong, K; Oh, S; Kim, D; Koh, W; Park, H; Im, S; Cho, MH
err分享
err收藏
Layer-by-Layer Growth of Two-Dimensional Tellurium Thin Films via Ultrahigh-Pressure Atomic Layer Deposition for p-Type Semiconductors通过超高压原子层沉积用于p型半导体的二维碲薄膜的逐层生长
errNANO LETTERS
IF9.1
err2024-12-12
err0
PREAI
errTran, Dai Cuong; Pham, Giang Hoang; Chu, Thi Thu Huong; Kim, Jiyoung; Jeong, Jae Kyeong; Im, Seongil; Lee, Byoung Hun; Sung, Myung Mo
err分享
err收藏
Pt/β-Ga2O3 Schottky devices enabling 60 Hz half-wave rectification for power-efficient pixel display
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-11-13
err1
PREAI
errJin, Hye-Jin; Bae, Heesun; Im, Jaeho T.; Im, Seongil
err分享
err收藏
Anomalous in-plane electrical anisotropy in elemental metal nanosheets
errNATURE SYNTHESIS
IF20
err2024-10-31
err1
PREAI
errKim, Taehoon; Seo, Dongchul; Kim, Sungsoon; Kim, Gyu Won; Shin, Seung-Jae; Kim, Se Young; Lee, Minwoo; Bae, Jihong; Ra, Hansol; Kim, Minjun; Kim, Taeyoung; Lee, Soyeon; Kim, Seung-Rok; Cho, Hyunmin; Lee, Han Joo; Choi, Jaehyeok; Im, Seongil; Park, Jin-Woo; Cheon, Jinwoo; Lee, Joon Sang; Walsh, Aron; Shim, Wooyoung
err分享
err收藏
Thermally Induced Irreversible Disorder in Interlayer Stacking of γ-GeSe
errSMALL
IF12.1
err2024-10-22
err0
errOAAI
errKim, Joonho; Lee, Giyeok; Lee, Sol; Park, Jinsub; Lee, Kihyun; Jung, Joong-Eon; Lim, Seungjae; Jang, Jeongsu; Bae, Heesun; Lee, Jae-Ung; Im, Seongil; Soon, Aloysius; Kim, Kwanpyo
err分享
err收藏
Nanogap Channel and Reconfigurable Split-Gate Logic Achieved via Nano Scissoring on Ambipolar MoTe2 Transistors
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2024-07-01
err2
PREAI
errLee, Minjong; Yu, Si Eun; Lim, June Yeong; Kim, Hyun-Jung; Im, Seongil; Lee, Young Tack
err分享
err收藏
A transparent p-type semiconductor designed via a polarizability-enhanced strongly correlated insulator oxide matrix
errMATERIALS HORIZONS
IF10.7
err2024-01-01
err1
PREAI
errLee, Seung Yong; Kim, Inseo; Kim, Hyun Jae; Sim, Sangjun; Lee, Jae-Hoon; Yun, Sora; Bang, Joonho; Park, Kyoung Won; Han, Chul Jong; Kim, Hyun-Min; Yang, Heesun; Kim, Bongjae; Im, Seongil; Facchetti, Antonio; Oh, Min Suk; Lee, Kyu Hyoung; Lee, Kimoon
err分享
err收藏
Negative Photoresponse Switching via Electron-Hole Recombination at The Type III Junction of MoTe2 Channel/SnS2 Top Layer通过MoTe2通道/SnS2顶层的III型结处的电子-空穴复合进行负光响应切换
errADVANCED MATERIALS
IF26.8
err2023-10-25
err10
PREAI
errJeong, Yeonsu; Kim, Taewook; Cho, Hyunmin; Ahn, Jongtae; Hong, Sungjae; Hwang, Do Kyung; Im, Seongil
err分享
err收藏
Low-temperature growth of MoS2 on polymer and thin glass substrates for flexible electronics用于柔性电子的聚合物和薄玻璃基板上MoS2的低温生长
errNATURE NANOTECHNOLOGY
IF34.9
err2023-07-27
err58
PREAI
errHoang, Anh Tuan; Hu, Luhing; Kim, Beom Jin; Van, Tran Thi Ngoc; Park, Kyeong Dae; Jeong, Yeonsu; Lee, Kihyun; Ji, Seunghyeon; Hong, Juyeong; Katiyar, Ajit Kumar; Shong, Bonggeun; Kim, Kwanpyo; Im, Seongil; Chung, Woon Jin; Ahn, Jong-Hyun
err分享
err收藏
Ultrafast van der Waals diode using graphene quantum capacitance and Fermi-level depinning
errSCIENCE ADVANCES
IF12.5
err2023-07-21
err10
errOAAI
errHong, Sungjae; Hong, Chang-Ui; Lee, Sol; Jang, Myeongjin; Jang, Chorom; Lee, Yangjin; Widiapradja, Livia Janice; Park, Sam; Kim, Kwanpyo; Son, Young-Woo; Yook, Jong-Gwan; Im, Seongil
err分享
err收藏
5 nm Ultrathin Crystalline Ferroelectric P(VDF-TrFE)-Brush Tuned for Hysteresis-Free Sub 60 mV dec-1 Negative-Capacitance Transistors5 nm超薄晶体铁电P (vdf-trfe) 电刷，用于无磁滞Sub 60 mV 12月-1负电容晶体管
errADVANCED MATERIALS
IF26.8
err2023-04-13
err8
PREAI
errCho, Hyunmin; Jin, Hye-Jin; Lee, Sol; Jeon, Seungbae; Cho, Yongjae; Park, Sam; Jang, Myeongjin; Widiapradja, Livia Janice; Ryu, Du Yeol; Park, Ji Hoon; Kim, Kwanpyo; Im, Seongil
err分享
err收藏
Reconfigurable Electronic Physically Unclonable Functions Based on Organic Thin-Film Transistors with Multiscale Polycrystalline Entropy for Highly Secure Cryptography Primitives基于具有多尺度多晶熵的有机薄膜晶体管的可重构电子物理不可克隆功能，用于高度安全的密码学原语
errADVANCED FUNCTIONAL MATERIALS
IF19
err2022-12-28
err16
errOAAI
errKim, Dongyoung; Im, Seongil; Kim, Danbi; Lee, Hanna; Choi, Changsoon; Cho, Jeong Ho; Ju, Hyunsu; Lim, Jung Ah
err分享
err收藏
Measuring the Bandgap of Ambipolar 2D Semiconductors using Multilayer Graphene Contact
errSMALL SCIENCE
IF8.3
err2022-12-22
err1
errOAAI
errPark, Sam; Hong, Sungjae; Lim, June Yeong; Yu, Sanghyuck; Kim, Jungcheol; Cheong, Hyeonsik; Im, Seongil
err分享
err收藏
Ambipolar Nonvolatile Memory Behavior and Reversible Type-Conversion in MoSe2/MoSe2 Transistors with Modified Stack Interface具有修改的堆叠接口的MoSe2/MoSe2晶体管中的双极非易失性存储器行为和可逆类型转换
errADVANCED FUNCTIONAL MATERIALS
IF19
err2022-10-09
err0
PREAI
errKim, Taewook; Kang, Donghee; Lee, Sol; Jeong, Yeonsu; Cho, Hyunmin; Kim, Junho; Bae, Heesun; Yi, Yeonjin; Kim, Kwanpyo; Im, Seongil
err分享
err收藏

研究方向

暂时未获取到该数据
合作学者
合作期刊
T
Takashi Taniguchi
H 指数: 198 · 论文数: 5.5K
A
Antonio Facchetti
H 指数: 132 · 论文数: 786
A
Aron Walsh
H 指数: 126 · 论文数: 985
J
Jong‐Hyun Ahn
H 指数: 90 · 论文数: 394
J
John E. Anthony
H 指数: 90 · 论文数: 693
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