K. L. Pey - Publications, H-index & Citations

K. L. Pey

Singapore University of Technology and Design

38H指数

511论文数

8.1K被引数

收录论文 82

发表时间

Destructive dielectric breakdown of 2D muscovite mica

APPLIED PHYSICS LETTERS

IF3.6

2024-09-10

PREAI

Maruvada, A.; O'Shea, S. J.; Deng, J.; Shubhakar, K.; Raghavan, N.; Pey, K. L.

Adhesion Microscopy as a Nanoscale Probe for Oxidation and Charge Generation at Metal-Oxide Interfaces

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-08-29

OAAI

Ranjan, Alok; Padovani, Andrea; Dianat, Behnood; Raghavan, Nagarajan; Pey, Kin Leong; O'Shea, Sean J.

Probing resistive switching in HfO2/Al2O3 bilayer oxides using in-situ transmission electron microscopy

APPLIED MATERIALS TODAY

IF6.9

2023-04-01

OAAI

Ranjan, Alok; Xu, Hejun; Wang, Chaolun; Molina, Joel; Wu, Xing; Zhang, Hui; Sun, Litao; Chu, Junhao; Pey, Kin Leong

Molecular Bridges Link Monolayers of Hexagonal Boron Nitride during Dielectric Breakdown 介电击穿过程中六方氮化硼的分子桥链接单层

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-02-09

OAAI

Ranjan, Alok; O'Shea, Sesn J.; Padovani, Andrea; Su, Tong; La Torraca, Paolo; Ang, Yee Sin; Munde, Manveer Singh; Zhang, Chenhui; Zhang, Xixiang; Bosman, Michel; Raghavan, Nagarajan; Pey, Kin Leong

Super-resolution laser probing of integrated circuits using algorithmic methods

NATURE COMMUNICATIONS

IF15.7

2022-09-02

OAAI

Ravikumar, V. K.; Chin, Jiann Min; Lua, Winson; Linarto, Nathan; Ranganathan, Gopinath; Trisno, Jonathan; Pey, K. L.; Yang, Joel K. W.

Dielectric breakdown of 2D muscovite mica

SCIENTIFIC REPORTS

IF3.9

2022-08-18

OAAI

Maruvada, Anirudh; Shubhakar, Kalya; Raghavan, Nagarajan; Pey, Kin Leong; O'Shea, Sean J.

Spatially Controlled Generation and Probing of Random Telegraph Noise in Metal Nanocrystal Embedded HfO2 Using Defect Nanospectroscopy 使用缺陷纳米谱在嵌入HfO2的金属纳米晶体中空间控制随机电报噪声的产生和探测

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2022-07-19

OAAI

Ranjan, Alok; Puglisi, Francesco Maria; Molina-Reyes, Joel; Pavan, Paolo; O'Shea, Sean J.; Raghavan, Nagarajan; Pey, Kin Leong

Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection

NANOMATERIALS

IF4.3

2022-05-19

OAAI

Zhu, Xinyu; Dong, Shurong; Yu, Fangjun; Deng, Feifan; Shubhakar, Kalya; Pey, Kin Leong; Luo, Jikui

Standards for the Characterization of Endurance in Resistive Switching Devices

ACS NANO

IF16

2021-11-03

155

OAAI

Lanza, Mario; Waser, Rainer; Ielmini, Daniele; Yang, J. Joshua; Goux, Ludovic; Sune, Jordi; Kenyon, Anthony Joseph; Mehonic, Adnan; Spiga, Sabina; Rana, Vikas; Wiefels, Stefan; Menzel, Stephan; Valov, Ilia; Villena, Marco A.; Miranda, Enrique; Jing, Xu; Campabadal, Francesca; Gonzalez, Mireia B.; Aguirre, Fernando; Palumbo, Felix; Zhu, Kaichen; Roldan, Juan Bautista; Puglisi, Francesco Maria; Larcher, Luca; Hou, Tuo-Hung; Prodromakis, Themis; Yang, Yuchao; Huang, Peng; Wan, Tianqing; Chai, Yang; Pey, Kin Leong; Raghavan, Nagarajan; Duenas, Salvador; Wang, Tao; Xia, Qiangfei; Pazos, Sebastian

Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride 单晶六方氮化硼中的介电击穿

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-08-11

PREAI

Ranjan, Alok; Raghavan, Nagarajan; Holwill, Matthew; Watanabe, Kenji; Taniguchi, Takashi; Novoselov, Kostya S.; Pey, Kin Leong; O'Shea, Sean J.

Localized Probing of Dielectric Breakdown in Multilayer Hexagonal Boron Nitride 多层六方氮化硼中电介质击穿的局部探测

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-12-01

PREAI

Ranjan, Alok; O'Shea, Sean J.; Bosman, Michel; Raghavan, Nagarajan; Pey, Kin Leong

Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial Defects

ADVANCED SCIENCE

IF14.1

2018-04-14

OAAI

Wu, Xing; Yu, Kaihao; Cha, Dongkyu; Bosman, Michel; Raghavan, Nagarajan; Zhang, Xixiang; Li, Kun; Liu, Qi; Sun, Litao; Pey, Kinleong

Random telegraph noise in 2D hexagonal boron nitride dielectric films

APPLIED PHYSICS LETTERS

IF3.6

2018-03-28

PREAI

Ranjan, A.; Puglisi, F. M.; Raghavan, N.; O'Shea, S. J.; Shubhakar, K.; Pavan, P.; Padovani, A.; Larcher, L.; Pey, K. L.

Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films

SCIENTIFIC REPORTS

IF3.9

2018-02-12

OAAI

Ranjan, A.; Raghavan, N.; O'Shea, S. J.; Mei, S.; Bosman, M.; Shubhakar, K.; Pey, K. L.

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale

ADVANCED MATERIALS

IF26.8

2017-11-27

PREAI

Wu, Xing; Luo, Chen; Hao, Peng; Sun, Tao; Wang, Runsheng; Wang, Chaolun; Hu, Zhigao; Li, Yawei; Zhang, Jian; Bersuker, Gennadi; Sun, Litao; Pey, Kinleong

Resistive switching characteristics of MIM structures based on oxygen-variable ultra-thin HfO2 and fabricated at low temperature 基于氧变超薄HfO2和低温制备的MIM结构的电阻开关特性

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-08-01

PREAI

Molina, Joel; Torres, Reydezel; Ranjan, Alok; Pey, Kin-Leong

Germanium coated vertically-aligned multiwall carbon nanotubes as lithium-ion battery anodes

CARBON

IF11.6

2014-10-01

OAAI

Susantyolzo, Rahmat Agung; Wang, Xinghui; Sun, Leimeng; Pey, Kin Leong; Fitzgerald, Eugene; Zhang, Qing