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J

Jae-Keun Kim

Max Planck Institute of Microstructure Physics

H指数:19

被引数:1,728

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Interferometric Evidence of Nonvolatile Anomalous Phase Shifts in Exchange-Spin-Split Josephson Supercurrent Diodes

交换自旋分裂约瑟夫森超电流二极管中非易失性异常相移的干涉证据

IF16

2026-01-220

OAAI

Scalable Integration of Single-Crystalline Ag Nanosheets for Threshold Voltage Engineering in Oxide Thin-Film Transistors

可扩展的单晶Ag纳米片集成在氧化物薄膜晶体管中用于阈值电压工程

IF16

2025-11-010

PRE

Long-range phase coherence and tunable second order φ0-Josephson effect in a Dirac semimetal 1T-PtTe2

COMMUNICATIONS PHYSICS

IF5.8

2024-10-281

OAAI

Intrinsic supercurrent non-reciprocity coupled to the crystal structure of a van der Waals Josephson barrier

与范德华约瑟夫森势垒的晶体结构耦合的本征超电流非互易性

NATURE COMMUNICATIONS

IF15.7

2024-02-066

OAAI

Chiral antiferromagnetic Josephson junctions as spin-triplet supercurrent spin valves and d.c. SQUIDs

NATURE NANOTECHNOLOGY

IF34.9

2023-03-3010

OAAI

Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors

SCIENCE ADVANCES

IF12.5

2022-09-2341

OAAI

Zero-field polarity-reversible Josephson supercurrent diodes enabled by a proximitymagnetized Pt barrier (Jul, 10.1038/s41563-022-01300-7, 2022)

NATURE MATERIALS

IF38.5

2022-07-221

OA

Zero-field polarity-reversible Josephson supercurrent diodes enabled by a proximity-magnetized Pt barrier

NATURE MATERIALS

IF38.5

2022-07-0766

PRE

Enhanced Thermoelectric Power Factor in Carrier-Type-Controlled Platinum Diselenide Nanosheets by Molecular Charge-Transfer Doping

IF12.1

2022-04-295

PRE

Channel-Length-Modulated Avalanche Multiplication in Ambipolar WSe2 Field-Effect Transistors

双极性WSe2场效应晶体管中的沟道长度调制雪崩倍增

IF16

2022-04-0419

PRE

Role of Two-Dimensional Ising Superconductivity in the Nonequilibrium Quasiparticle Spin-to-Charge Conversion Efficiency

二维Ising超导在非平衡准粒子自旋到电荷转换效率中的作用

IF16

2021-10-014

OAAI

Resistive Switching by Percolative Conducting Filaments in Organometal Perovskite Unipolar Memory Devices Analyzed Using Current Noise Spectra

ADVANCED FUNCTIONAL MATERIALS

IF19

2021-09-2311

PREAI

Molecular Dopant-Dependent Charge Transport in Surface-Charge-Transfer-Doped Tungsten Diselenide Field Effect Transistors

表面电荷转移掺杂的二硒化钨场效应晶体管中依赖于分子掺杂剂的电荷传输

ADVANCED MATERIALS

IF26.8

2021-09-1738

PRE

Ultrasensitive Photodetection in MoS2 Avalanche Phototransistors

ADVANCED SCIENCE

IF14.1

2021-08-0846

OAAI

Tailored Design-of-Experiments Approach for Device Performance Prediction and Optimization of Flash-Evaporated Organic-Inorganic Halide Perovskite-Based Photodetectors

用于闪存有机-无机卤化物钙钛矿基光电探测器器件性能预测和优化的定制实验设计方法

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2021-03-057

PREAI

Enhanced Charge Injection Properties of Organic Field Effect Transistor by Molecular Implantation Doping (vol 31, 1806697, 2019)

ADVANCED MATERIALS

IF26.8

2020-09-210

OAAI

Enhanced Output Performance of All-Solution-Processed Organic Thermoelectrics: Spray Printing and Interface Engineering

全溶液处理的有机热电材料的增强输出性能: 喷涂和界面工程

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2020-05-1413

PREAI

Analysis of Switch Losses in Cycloconverter-type High Frequency Link Converter for Bidirectional Battery Chargers

2019 IEEE VEHICLE POWER AND PROPULSION CONFERENCE (VPPC)

IF0

2019-10-011

PREAI

Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors

p掺杂对双极性WSe2场效应晶体管的电学和光电特性的影响

NANOSCALE RESEARCH LETTERS

IF4.1

2019-09-1216

OAAI

Intrinsic Optoelectronic Characteristics of MoS2 Phototransistors via a Fully Transparent van der Waals Heterostructure

IF16

2019-07-2552

OAAI