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T

Tae-Young Kim

seoul national university (snu)

H指数:17

被引数:1,583

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Lipid-Rich diet protects aquatic vertebrates by reducing polystyrene nanoparticles deposition and alleviating harmful effects from exposure

脂质丰富饮食通过减少聚苯乙烯纳米颗粒沉积和缓解暴露的有害影响来保护水生脊椎动物

Aquatic Toxicology

IF4.3

2025-07-220

PRE

Polytypic Two-Dimensional FeAs with High Anisotropy

IF9.1

2023-12-040

PRE

Enhancement of InGaZnO Thin-Film Transistors by Contact Barrier Modulation Using Oxygen Defects

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-07-115

PRE

Effect of Oxygen Plasma on ?-Ga2O3 Deep Ultraviolet Photodetectors Fabricated by Plasma-Assisted Pulsed Laser Deposition

氧等离子体对？-通过等离子体辅助脉冲激光沉积制造的Ga2O3深紫外光电探测器

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-04-254

PRE

Resistive switching behaviors of cobalt oxide films with structural change by post-thermal annealing

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-03-015

PRE

A high-performance logic inverter achieved using mixed-dimensional WSe2/n+-Si and MoS2/p+-Si junction field-effect transistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2023-01-011

PRE

High-performance MoS2/p+-Si heterojunction field-effect transistors by interface modulation

通过界面调制的高性能MoS2/p-si异质结场效应晶体管

IF9

2022-04-309

PRE

Photoelectric Characteristics of a Large-Area n-MoS2/p-Si Heterojunction Structure Formed through Sulfurization Process

IF3.5

2020-12-2111

OAAI

Characteristics of Cl-doped MoS2 field-effect transistors

SENSORS AND ACTUATORS A-PHYSICAL

IF4.9

2020-09-0114

PREAI

Dose-dependent effect of proton irradiation on electrical properties of WSe2 ambipolar field effect transistors

IF5.1

2019-01-018

PREAI

Nanoscale enhancement of photoconductivity by localized charge traps in the grain structures of monolayer MoS2

SCIENTIFIC REPORTS

IF3.9

2018-10-2515

OAAI

Fully Transparent p-MoTe2 2D Transistors Using Ultrathin MoOx/Pt Contact Media for Indium-Tin-Oxide Source/Drain

ADVANCED FUNCTIONAL MATERIALS

IF19

2018-07-2728

PREAI

Two-Dimensional Thickness-Dependent Avalanche Breakdown Phenomena in MoS2 Field-Effect Transistors under High Electric Fields

高电场下MoS2场效应晶体管中二维厚度相关的雪崩击穿现象

IF16

2018-06-2850

PREAI

Contact-Engineered Electrical Properties of MoS2 Field-Effect Transistors via Selectively Deposited Thiol-Molecules

ADVANCED MATERIALS

IF26.8

2018-03-2373

PREAI

Ultrafast quantum beats of anisotropic excitons in atomically thin ReS2

NATURE COMMUNICATIONS

IF15.7

2018-01-2460

OAAI

Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms

IF16

2017-08-2875

PREAI

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

SCIENTIFIC REPORTS

IF3.9

2016-11-1079

OAAI

Electrical Properties of Synthesized Large-Area MoS2 Field-Effect Transistors Fabricated with Inkjet-Printed Contacts

IF16

2016-02-0163

PREAI

Electrical and Optical Characterization of MoS2 with Sulfur Vacancy Passivation by Treatment with Alkanethiol Molecules

通过用烷硫醇分子处理具有硫空位钝化的MoS2的电学和光学表征

IF16

2015-08-13210

PREAI

Enhancement of photodetection characteristics of MoS2 field effect transistors using surface treatment with copper phthalocyanine

IF5.1

2015-01-01116

PREAI