Ta-Shun Chou

leibniz-institut für kristallzüchtung

H指数:16

被引数:776

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Morphology investigation of metalorganic vapor phase epitaxy homoepitaxial (001) β-Ga2O3 growth on on-axis and 6° off-axis substrates

金属有机气相外延法在轴和6°偏离轴衬底上(001)β-Ga2O3同质外延生长的形貌研究

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

IF2.1

2026-05-011

PRE

Metalorganic vapor phase epitaxy of β-(AlxGa1-x)2O3 (x=0-0.55) and multilayer structure on (100) β-(Al0.24Ga0.76)2O3 substrates

(100) β-(Al₀.₂₄Ga₀.₇₆)₂O₃衬底上β-(AlₓGa₁₋ₓ)₂O₃ (x=0-0.55)和多层结构的金属有机气相外延生长

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

IF2.1

2026-05-010

PRE

Characterization of strain effects on structure; surface morphology; and band gap of MOVPE grown β-Ga2O3 thin films on β-(AlxGa1−x)2O3 substrates

应变效应对结构、表面形貌以及MOVPE生长的β-Ga2O3薄膜在β-(AlxGa1−x)2O3衬底上的带隙的影响表征

Journal of Physics D: Applied Physics

IF3.2

2025-12-240

Al composition dependence of band alignment in NiO/(AlxGa1-x)2O3 heterojunctions

Al成分对NiO/(AlxGa1-x)2O3异质结能带对齐的依赖性

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

IF2.1

2025-12-010

PRE

Optimizing the morphology transition on MOVPE-grown (100) β-Ga2O3 film between step-flow growth and step-bunching: A machine learning-assisted approach

优化MOVPE生长的(100) β-Ga2O3薄膜在阶梯流生长和阶梯聚集之间的形貌转变：一种机器学习辅助方法

APL MATERIALS

IF4.5

2025-05-020

Impurity-induced step pinning and recovery in MOVPE-grown (100) β-Ga2O3 film

APPLIED PHYSICS LETTERS

IF3.6

2025-01-130

PRE

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga₂O₃ Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

在高温退火条件下Czochralski法生长的(100) β-Ga2O3中Mg的向外扩散和向上扩散及其对横向MOSFET器件的影响

Advanced Electronic Materials

IF5.3

2024-10-220

Influencing the morphological stability of MOVPE-grown β-Ga 2 O 3 films by O 2 /Ga ratio

APPLIED SURFACE SCIENCE

IF6.9

2024-07-013

OAAI

Solid-Solution Limits and Thorough Characterization of Bulk β-(AlxGa1-x)2O Single Crystals Grown by the Czochralski Method

ADVANCED MATERIALS INTERFACES

IF4.4

2024-06-142

OAAI

In-situ spectral reflectance investigation of hetero-epitaxially grown β-Ga2O3 thin films on c-plane Al2O3 via MOVPE process

APPLIED SURFACE SCIENCE

IF6.9

2024-04-012

OAAI

Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β-Ga2O3 films for vertical device application

APPLIED PHYSICS LETTERS

IF3.6

2023-01-3115

Perspectives on MOVPE-grown (100) β-Ga2O3 thin films and its Al-alloy for power electronics application

APPLIED PHYSICS LETTERS

IF3.6

2022-12-147

Cobalt as a promising dopant for producing semi-insulating β-Ga2O3 crystals: Charge state transition levels from experiment and theory

APL MATERIALS

IF4.5

2022-11-087

Effect of post-metallization anneal on (100) Ga2O3/Ti-Au ohmic contact performance and interfacial degradation

APL MATERIALS

IF4.5

2022-09-1313

Exploiting the Nanostructural Anisotropy of beta-Ga2O3 to Demonstrate Giant Improvement in Titanium/Gold Ohmic Contacts

ACS NANO

IF16

2022-08-0926

PRE

Si doping mechanism in MOVPE-grown (100) β-Ga2O3 films

APPLIED PHYSICS LETTERS

IF3.6

2022-07-1816

Refractory metal-based ohmic contacts on β-Ga2O3 using TiW

APL MATERIALS

IF4.5

2022-07-128

Two inch diameter, highly conducting bulk β-Ga2O3 single crystals grown by the Czochralski method

APPLIED PHYSICS LETTERS

IF3.6

2022-04-1251

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p-n diodes

APPLIED PHYSICS LETTERS

IF3.6

2022-03-1830

Impact of chamber pressure and Si-doping on the surface morphology and electrical properties of homoepitaxial (100) β-Ga2O3 thin films grown by MOVPE

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-10-2240

PRE

Ta-Shun Chou

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