未登录

F

Fernando Lloret

University of Cadiz

H指数:13

被引数:565

个人简介

暂无内容

教育背景

暂无内容

工作经历

暂无内容

荣誉奖项

暂无内容

Impact of Rapid Thermal Annealing on the Structural and Piezoelectric Properties of AlN Thin Films

快速热退火对AlN薄膜的结构和压电性能的影响

Advanced Electronic Materials

IF5.3

2026-09-260

OAAI

One-step fabrication of diamond microtubes: A proof of concept

一步法制备金刚石微管：概念验证

IF11.6

2026-08-110

PRE

Smart Cut Transfer of Wide-Bandgap Materials: The Case of Diamond

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

IF1.9

2025-11-011

OAAI

Mechanism of Heteroepitaxial Growth of Boron Carbide on the Si-Face of 4H-SiC

CRYSTAL GROWTH & DESIGN

IF3.4

2025-02-140

PRE

Inducing controlled blistering by Smart-Cut™ process in semiconducting diamond: A STEM study

APPLIED SURFACE SCIENCE

IF6.9

2025-02-010

OAAI

Systematic approach for high piezoelectric AlN deposition

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2024-12-010

PRE

FIB in-situ fabrication of pseudo vertical diamond Schottky diode: H-terminated ohmic contact and O-terminated Schottky barrier

APPLIED SURFACE SCIENCE

IF6.9

2024-11-011

OAAI

Microscopic evidence of carbide formation at the interface of tungsten-based ohmic contacts on diamond

APPLIED SURFACE SCIENCE

IF6.9

2024-09-013

OAAI

Laser Engineering Nanocarbon Phases within Diamond for Science and Electronics

IF16

2024-01-173

OAAI

The effect of microstructure and film composition on the mechanical properties of linear antenna CVD diamond thin films

ACTA MATERIALIA

IF9.3

2024-01-013

OA

Boron-doped diamond growth on carbon fibre: Enhancing the electrical conductivity

APPLIED SURFACE SCIENCE

IF6.9

2023-04-016

OAAI

Diamond for Electronics: Materials, Processing and Devices

电子用金刚石: 材料、加工和设备

IF3.2

2021-11-2252

OAAI

Dislocation generation mechanisms in heavily boron-doped diamond epilayers

APPLIED PHYSICS LETTERS

IF3.6

2021-02-0512

OAAI

Impact of methane concentration on surface morphology and boron incorporation of heavily boron-doped single crystal diamond layers

IF11.6

2021-02-0124

PREAI

Selectively boron doped homoepitaxial diamond growth for power device applications

APPLIED PHYSICS LETTERS

IF3.6

2021-01-1511

OAAI

Diamond/γ-alumina band offset determination by XPS

APPLIED SURFACE SCIENCE

IF6.9

2021-01-0123

OAAI

Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

APPLIED SURFACE SCIENCE

IF6.9

2020-10-017

OAAI

Improved Field Electron Emission Properties of Phosphorus and Nitrogen Co-Doped Nanocrystalline Diamond Films

改善磷和氮共掺杂纳米金刚石薄膜的场电子发射性能

IF4.3

2020-05-2714

OAAI

Determination of alumina bandgap and dielectric functions of diamond MOS by STEM-VEELS

APPLIED SURFACE SCIENCE

IF6.9

2018-12-0118

PREAI

High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM

APPLIED SURFACE SCIENCE

IF6.9

2018-12-013

PREAI