Julien Pernot - Publications, H-index & Citations

Julien Pernot

Institut Néel

35H指数

223论文数

4.1K被引数

收录论文 55

发表时间

Comprehensive electrical analysis of interface states in Al 2O 3/OH-terminated (111) diamond MOSCap Al₂O₃/OH-terminated (111) diamond MOS电容器界面态的全面电学分析

Diamond and Related Materials

IF5.1

2025-12-16

PREAI

Pietro Argenton; Martin Kah; David Eon; Julien Pernot

Diamond-based non-volatile memory 基于金刚石的非易失性存储器

Carbon

IF11.6

2025-11-20

OAAI

Martin Kah; Cédric Masante; Nicolas Rouger; Fabrice Donatini; Juliette Letellier; Franz A. Koeck; Robert J. Nemanich; Julien Pernot

Temperature Dependence of Betavoltaic Cell Performance of Diamond pn Junction Diode

IEEE ELECTRON DEVICE LETTERS

IF4.5

2024-01-01

OAAI

Shimaoka, Takehiro; Umezawa, Hitoshi; Jacopin, Gwenole; Koizumi, Satoshi; Fujiwara, Takeshi; Pernot, Julien

Boosting the piezoelectric coefficients of flexible dynamic strain sensors made of chemically-deposited ZnO nanowires using compensatory Sb doping 使用补偿性Sb掺杂提高由化学沉积的ZnO纳米线制成的柔性动态应变传感器的压电系数

NANO ENERGY

IF17.1

2023-09-01

OAAI

Villafuerte, Jose; Zhang, Xiaoting; Sarigiannidou, Eirini; Donatini, Fabrice; Chaix-Pluchery, Odette; Rapenne, Laetitia; Le, Minh-Quyen; Petit, Lionel; Pernot, Julien; Consonni, Vincent

Carrier Mobility up to 106 cm2 V-1 s-1 Measured in Single-Crystal Diamond by the Time-of-Flight Electron-Beam-Induced-Current Technique

PHYSICAL REVIEW APPLIED

IF4.4

2023-08-16

OAAI

Portier, A.; Donatini, F.; Dauvergne, D.; Gallin-Martel, M. -l.; Pernot, J.

Optical properties of Ga-doped AlN nanowires

APPLIED PHYSICS LETTERS

IF3.6

2023-03-02

OAAI

Vermeersch, Remy; Jacopin, Gwenole; Robin, Eric; Pernot, Julien; Gayral, Bruno; Daudin, Bruno

Formation of p-n+ diamond homojunctions by shallow doping of phosphorus through liquid emersion excimer laser irradiation 通过液体emersion准分子激光辐照通过磷的浅掺杂形成p-n金刚石同质结

MATERIALS RESEARCH LETTERS

IF7.9

2022-06-06

OAAI

Abubakr, Eslam; Ohmagari, Shinya; Zkria, Abdelrahman; Ikenoue, Hiroshi; Pernot, Julien; Yoshitake, Tsuyoshi

DX center formation in highly Si doped AlN nanowires revealed by trap assisted space-charge limited current

APPLIED PHYSICS LETTERS

IF3.6

2022-04-21

OAAI

Vermeersch, Remy; Jacopin, Gwenole; Daudin, Bruno; Pernot, Julien

Shallow donor and DX state in Si doped AlN nanowires grown by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2021-12-28

OAAI

Vermeersch, Remy; Robin, Eric; Cros, Ana; Jacopin, Gwenole; Daudin, Bruno; Pernot, Julien

Ultrawide bandgap semiconductors

APPLIED PHYSICS LETTERS

IF3.6

2021-05-17

OAAI

Higashiwaki, Masataka; Kaplar, Robert; Pernot, Julien; Zhao, Hongping

Engineering nitrogen- and hydrogen-related defects in ZnO nanowires using thermal annealing

PHYSICAL REVIEW MATERIALS

IF3.4

2021-05-06

OAAI

Villafuerte, Jose; Chaix-Pluchery, Odette; Kioseoglou, Joseph; Donatini, Fabrice; Sarigiannidou, Eirini; Pernot, Julien; Consonni, Vincent

Nanoscale Dopant Profiling of Individual Semiconductor Wires by Capacitance-Voltage Measurement 通过电容-电压测量对单个半导体线进行纳米级掺杂分析

NANO LETTERS

IF9.1

2021-04-07

OAAI

Lassiaz, Timothee; Tchoulfian, Pierre; Donatini, Fabrice; Brochet, Julien; Parize, Romain; Jacopin, Gwenole; Pernot, Julien

Recent progress in deep-depletion diamond metal-oxide-semiconductor field-effect transistors

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-03-22

OAAI

Masante, Cedric; Rouger, Nicolas; Pernot, Julien

Diamond/γ-alumina band offset determination by XPS

APPLIED SURFACE SCIENCE

IF6.9

2021-01-01

OAAI

Canas, J.; Alba, G.; Leinen, D.; Lloret, F.; Gutierrez, M.; Eon, D.; Pernot, J.; Gheeraert, E.; Araujo, D.

Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

APPLIED SURFACE SCIENCE

IF6.9

2020-10-01

OAAI

Pinero, J. C.; de Vecchy, J.; Fernandez, D.; Alba, G.; Widiez, J.; Di Cioccio, L.; Lloret, F.; Araujo, D.; Pernot, J.

Ultrahigh conversion efficiency of betavoltaic cell using diamond pn junction

APPLIED PHYSICS LETTERS

IF3.6

2020-09-11

OAAI

Shimaoka, T.; Umezawa, H.; Ichikawa, K.; Pernot, J.; Koizumi, S.

Zinc Vacancy-Hydrogen Complexes as Major Defects in ZnO Nanowires Grown by Chemical Bath Deposition

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2020-07-01

OAAI

Villafuerte, Jose; Donatini, Fabrice; Kioseoglou, Joseph; Sarigiannidou, Eirini; Chaix-Pluchery, Odette; Pernot, Julien; Consonni, Vincent

2D hole gas mobility at diamond/insulator interface

APPLIED PHYSICS LETTERS

IF3.6

2020-04-22

OAAI

Daligou, G.; Pernot, J.

Diamond power devices: state of the art, modelling, figures of merit and future perspective

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-12-17

200

OAAI

Donato, N.; Rouger, N.; Pernot, J.; Longobardi, G.; Udrea, F.

Mg and In Codoped p-type AIN Nanowires for pn Junction Realization

NANO LETTERS

IF9.1

2019-11-14

OAAI

Siladie, Alexandra-Madalina; Jacopin, Gwenole; Cros, Ana; Garro, Nuria; Robin, Eric; Caliste, Damien; Pochet, Pascal; Donatini, Fabrice; Pernot, Julien; Daudin, Bruno

研究方向