Jianxun Dai

dalian university of technology

H指数:18

被引数:1,433

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1700-V Enhancement-Mode MIS-HEMTs With Fully Recessed-Gate on 6-in GaN-on-Si Wafer

1700-V增强型MIS-HEMT器件在6英寸GaN-on-Si晶圆上实现全凹栅结构

IEEE Transactions on Electron Devices

IF3.2

2026-09-070

PRE

High Threshold Voltage E-Mode MIS-HEMTs on 6-in GaN-on-Si: Fully Recessed Gate With N₂/O₂ Plasma Treatment

6英寸Si上GaN MIS-HEMT的高阈值电压E-模式器件：采用N<sub>2</sub>/O<sub>2</sub>等离子体处理的完全凹槽栅极

IEEE Transactions on Electron Devices

IF3.2

2026-07-070

PRE

Formaldehyde Sensing in Mixed Gas Environments Using Co3O4-Encapsulated ZnO-Based Yolk-Shell Spheres for Breath Analysis (vol 8, pg 4170, 2025)

使用Co3O4封装的ZnO基蛋黄-壳微球在混合气体环境中对甲醛的传感检测（卷8，页4170，2025）

ACS APPLIED NANO MATERIALS

IF5.5

2025-05-150

PRE

Nonvolatile Control of Optical and Electronic Responses in Two-Dimensional MoS2 via Ferroelectric ScAlN Thin Films

通过铁电ScAlN薄膜对二维MoS2的光学和电子响应进行非易失性控制

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2025-04-280

PRE

6-in. high-voltage GaN-based E-mode HEMTs with ultrathin barrier structures: Interface quality and its reliability

APPLIED PHYSICS LETTERS

IF3.6

2025-03-010

PRE

A novel metabolite-interacting protein (MIP)-based molecular subtyping construction and validation of IGFBP3 as a MIP-related oncogene in colorectal cancer

GENES & DISEASES

IF9.4

2025-03-010

OAAI

Formaldehyde Sensing in Mixed Gas Environments Using Co3O4-Encapsulated ZnO-Based Yolk-Shell Spheres for Breath Analysis

使用Co3O4封装的ZnO基蛋黄-壳微球在混合气体环境中检测甲醛用于呼吸分析

ACS APPLIED NANO MATERIALS

IF5.5

2025-02-170

PRE

GaN-based shallow-trench vertical Hall devices

APPLIED PHYSICS LETTERS

IF3.6

2025-01-230

PRE

A Room-Temperature Dual-Gas Humidity/Ammonia Sensor Based on Gallium Oxide for Breath Analysis

IEEE SENSORS JOURNAL

IF4.5

2025-01-010

PRE

A Portable Gauss Meter With Low Offset Based on AlGaN/GaN Hall Sensor Probe Suitable for High-Temperature Environment

一种基于AlGaN/GaN霍尔传感器探头的便携式低偏移高斯计，适用于高温环境

IEEE Transactions on Instrumentation and Measurement

IF5.9

2025-01-010

PRE

Optical Evidence of Interfacial Strain-Induced Ferroelectric Tuning and Enhancement in CuInP2S6 via Ferroelectric Substrate

通过铁电衬底在CuInP2S6中界面应变诱导的铁电调谐和增强的光学证据

SMALL

IF12.1

2024-12-170

PRE

1500 V recessed-free GaN-based HEMTs with ultrathin barrier epitaxial structure

APPLIED PHYSICS LETTERS

IF3.6

2024-12-040

PRE

Improved breakdown voltage and dynamic Ron characteristics in normally-off GaN-based HEMTs featuring fully-recessed and bilayer-dielectric gate structure

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-11-070

PRE

Controlled Fabrication of Wafer-Scale, Flexible Ag-TiO2 Nanoparticle-Film Hybrid Surface-Enhanced Raman Scattering Substrates for Sub-Micrometer Plastics Detection

NANOMATERIALS

IF4.3

2024-10-030

OAAI

Precise Crystal Orientation Identification and Twist-Induced Giant Modulation of Optical Anisotropy in 1T'-ReS2

ACS NANO

IF16

2024-05-170

PRE

Recess-free thin-barrier AlGaN/GaN Schottky barrier diodes with ultra-low leakage current: Experiment and simulation study

APPLIED PHYSICS LETTERS

IF3.6

2024-05-142

PRE

Space-confined solid-phase growth of two-domain 1T′-ReSe2 for tunable optoelectronics

APPLIED PHYSICS LETTERS

IF3.6

2024-02-223

A room-temperature formaldehyde sensor based on hematite for breast cancer diagnosis

ANALYST

IF3.3

2023-01-011

Synaptic mechanisms of four W/WO x /ITO memristors with different WO x structures

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-08-234

PRE

High performance humidity sensing property of Ti3C2Tx MXene-derived Ti3C2Tx/K2Ti4O9 composites

Ti3C2Tx MXene衍生的Ti3C2Tx/K2Ti4O9复合材料的高性能湿敏性能

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2021-01-0198

PREAI

Jianxun Dai

个人简介

教育背景

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