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T

T. Baron

ltm

45H指数
616论文数
6.5K被引数
收录论文 97
发表时间
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High-Detectivity InGaAs/GaAsP Superlattice PIN Photodetector with a Thin Absorber on GaAs substrate for 1100 nm Applications高探测度InGaAs/GaAsP超晶格PIN光电探测器：用于1100 nm应用的薄吸收层GaAs衬底器件
errAdvanced Electronic Materials
IF5.3
err2026-09-13
err0
errOAAI
errRémy Tribout; Alexis Palais; Driss Mouloua; Mickael Martin; Frédérique Ducroquet; Sébastien Cavalaglio; Badreddine Smiri; Jeremy Da Fonseca; Jeremy Moeyaert; Clara Cornille; Franck Bassani; Charles Leroux; Veronika Letka; Vita Mergner; David Cooper; Evan Oudot; Christophe Duluard; Sophie Barbet; Christophe Jany; Thierry Baron
err分享
err收藏
Low-resistance Ti-based ohmic contacts on p-GaAsSb低电阻Ti基欧姆接触在p-GaAsSb上
errMaterials Science in Semiconductor Processing
IF4.6
err2026-07-07
err0
errOAAI
errAli Ahmad; Nicolas Coudurier; Patrice Gergaud; Félix Ravry; Antoine Lombrez; Alexis Divay; Thierry Baron; Nicolas Gauthier; Romain Thibon; Luomon-Blandine Coulibaly; Nicolas Bernier; Hervé Boutry
err分享
err收藏
Electron Channeling Contrast Imaging for the Characterization of Dislocations in III-V Thin Films on Silicon (001)
errPHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
IF1.9
err2025-10-01
err0
errOAAI
errMonge-Bartolome, Laura; Mourino Minambres, Paula; Peiro Codoner, Alicia; Sinusia Lozano, Miguel; Yan, Zhao; Garcia Vara, Ivan; Baron, Thierry; Li, Qiang; Gomez, Victor J.
err分享
err收藏
MBE growth of InAs/GaAs quantum dot lasers on V-grooved (001) Si在V型槽(001)Si衬底上生长的InAs/GaAs量子点激光器MBE制备
errJournal of Physics D: Applied Physics
IF3.2
err2025-09-30
err0
PREAI
errMakhayeni Mtunzi; Haotian Zeng; Lifeng Bao; Chong Chen; Jae-Seong Park; Huiwen Deng; Yangqian Wang; Hui Jia; Jun Li; Hexing Wang; Yaonan Hou; Mateus G Masteghin; Richard Beanland; Frederic Gardes; Jeremy Moeyaert; Thierry Baron; Mingchu Tang; Alwyn Seeds; Huiyun Liu
err分享
err收藏
Ti and Ni-based BEOL CMOS-compatible P+-InGaAs ohmic contacts for the future of wireless communicationsTi和Ni基后段制程CMOS兼容的P+-InGaAs欧姆接触，用于未来无线通信
errMicroelectronic Engineering
IF3.1
err2025-07-26
err0
errOAAI
errA. Lombrez; H. Boutry; A. Divay; L. Colas; N. Coudurier; T. Baron
err分享
err收藏
Fanning the Flames: The Myth of World Cup Qualification Matches and Hooliganism Triggering the ‘Soccer War’煽风点火：世界杯预选赛与足球流氓引发的“足球战争”之迷思
errinternational sport coaching journal
IF0
err2025-05-12
err0
errOAAI
errTamir Bar-On; Olivier Lewis
err分享
err收藏
Exploring Strategies for Performance Enhancement in Micro-LEDs: a Synoptic Review of III-V Semiconductor Technology探索微发光二极管性能增强的策略: iii-v半导体技术综述
errADVANCED OPTICAL MATERIALS
IF7.2
err2024-12-26
err1
errOAAI
errMouloua, Driss; Martin, Michael; Beruete, Miguel; Jany, Christophe; Hassan, Karim; Baron, Thierry
err分享
err收藏
Effective InAsP dislocation filtering layers for InP heteroepitaxy on CMOS-standard (001) silicon
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-08-20
err1
errOAAI
errLiu, Shangfeng; Ratiu, Bogdan-Petrin; Jia, Hui; Yan, Zhao; Wong, Ka Ming; Martin, Mickael; Tang, Mingchu; Baron, Thierry; Liu, Huiyun; Li, Qiang
err分享
err收藏
Design and Characterization of 5 μm Pitch InGaAs Photodiodes Using In Situ Doping and Shallow Mesa Architecture for SWIR Sensing使用原位掺杂和浅台面结构进行SWIR传感的5μm间距InGaAs光电二极管的设计和表征
errSENSORS
IF3.5
err2023-11-16
err3
errOAAI
errTillement, Jules; Cervera, Cyril; Baylet, Jacques; Jany, Christophe; Nardelli, Francois; Di Rito, Thomas; Georges, Sylvain; Mugny, Gabriel; Saxod, Olivier; Gravrand, Olivier; Baron, Thierry; Roy, Francois; Boeuf, Frederic
err分享
err收藏
InGaAs/GaAsP Superlattice Resonant Cavity-Enhanced Photodetector Fabricated on a Nominal Si(001) Substrate for Near- and Short-Wavelength Infrared Applications在标称Si(001) 衬底上制造的InGaAs/GaAsP超晶格谐振腔增强型光电探测器，用于近红外和短波长红外应用
errACS PHOTONICS
IF6.7
err2023-08-16
err1
errOAAI
errLetka, Veronica; Martin, Mickael; Massara, Natalia; Leroux, Charles; Templier, Roselyne; Licitra, Christophe; Richy, Jerome; Baron, Thierry
err分享
err收藏
Towards Wireless Detection of Surface Modification of Silicon Nanowires by an RF Approach
errNANOMATERIALS
IF4.3
err2022-11-28
err3
errOAAI
errRequena, Florian; Ahoulou, Samuel; Barbot, Nicolas; Kaddour, Darine; Nedelec, Jean-Marie; Baron, Thierry; Perret, Etienne
err分享
err收藏
Monolithically Integrated Ultralow Threshold Topological Corner State Nanolasers on Silicon
errACS PHOTONICS
IF6.7
err2022-11-08
err12
errOAAI
errZhou, Taojie; Ma, Jingwen; Tang, Mingchu; Li, Haochuan; Martin, Mickael; Baron, Thierry; Liu, Huiyun; Chen, Siming; Sun, Xiankai; Zhang, Zhaoyu
err分享
err收藏
200 mm-scale growth of 2D layered GaSe with preferential orientation
errAPL MATERIALS
IF4.5
err2022-05-09
err3
errOAAI
errMartin, Mickael; Pochet, Pascal; Okuno, Hanako; Alvarez, Carlos; Bellet-Amalric, Edith; Hauchecorne, Pauline; Levert, Theo; Pelissier, Bernard; Borowik, Lukasz; Bassani, Franck; David, Sylvain; Moeyaert, Jeremy; Baron, Thierry
err分享
err收藏
Single-Mode Photonic Crystal Nanobeam Lasers Monolithically Grown on Si for Dense Integration在Si上单片生长的单模光子晶体纳米束激光器，用于密集集成
errIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
IF5.1
err2022-05-01
err1
errOAAI
errZhou, Taojie; Tang, Mingchu; Li, Haochuan; Zhang, Zhan; Cui, Yuzhou; Park, Jae-Seong; Martin, Markel; Baron, Thierry; Chen, Siming; Liu, Huiyun; Zhang, Zhaoyu
err分享
err收藏
Large-Scale Monolithic Fabrication of III-V Vertical Nanowires on a Standard Si(100) Microelectronic Substrate
errACS OMEGA
IF4.3
err2022-02-08
err6
errOAAI
errLecestre, Aurelie; Martin, Mickael; Cristiano, Filadelfo; Baron, Thierry; Larrieu, Guilhem
err分享
err收藏
Highly integrated photonic crystal bandedge lasers monolithically grown on Si substrates
erroptics letters
IF2.8
err2022-01-01
err9
errOAAI
errHuang, Yaoran; Zhou, Taojie; Tang, Mingchu; Xiang, Guohong; Li, Haochuan; Martin, Mickael; Baron, Thierry; Chen, Siming; Liu, Huiyun; Zhang, Zhaoyu
err分享
err收藏
Impact of Substrate Biasing During AlN Growth by PEALD on Al2O3/AlN/GaN MOS Capacitors
errADVANCED MATERIALS INTERFACES
IF4.4
err2021-12-28
err2
PREAI
errLegallais, Maxime; Lefevre, Gauthier; Martin, Simon; Labau, Sebastien; Bassani, Franck; Pelissier, Bernard; Baron, Thierry; Vauche, Laura; Le Royer, Cyrille; Charles, Matthew; Vandendaele, William; Plissonnier, Marc; Gwoziecki, Romain; Salem, Bassem
err分享
err收藏
3D field confinement in the near-field interaction between graphene and Si/SiGe axially heterostructured NWs
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-05-25
err0
errOAAI
errPura, Jose Luis; Balci, Osman; Baron, Thierry; Jimenez, Juan
err分享
err收藏
O-Band Emitting InAs Quantum Dots Grown by MOCVD on a 300 mm Ge-Buffered Si (001) Substrate通过MOCVD在300毫米Ge缓冲的Si (001) 衬底上生长的O带发射InAs量子点
errNANOMATERIALS
IF4.3
err2020-12-07
err6
errOAAI
errAbouzaid, Oumaima; Mehdi, Hussein; Martin, Mickael; Moeyaert, Jeremy; Salem, Bassem; David, Sylvain; Souifi, Abdelkader; Chauvin, Nicolas; Hartmann, Jean-Michel; Ilahi, Bouraoui; Morris, Denis; Ahaitouf, Ali; Ahaitouf, Abdelaziz; Baron, Thierry
err分享
err收藏
Improvement of AIN Film Quality Using Plasma Enhanced Atomic Layer Deposition with Substrate Biasing
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2020-08-10
err30
errOAAI
errLegallais, Maxime; Mehdi, Hussein; David, Sylvain; Bassani, Franck; Labau, Sebastien; Pelissier, Bernard; Baron, Thierry; Martinez, Eugenie; Ghibaudo, Gerard; Salem, Bassem
err分享
err收藏

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