Ruyue Cao

Chinese Academy of Sciences

H指数:11

被引数:475

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Ferroelectric Ga2O3-Enabled High-Density Spintronic Memory via Nonrelativistic Spin Splitting

铁电Ga2O3启用的通过非相对论自旋分裂实现的高密度自旋电子学存储器

Advanced Functional Materials

IF19

2025-10-060

PRE

Dislocation-assisted electron and hole transport in GaN epitaxial layers

位错辅助的电子和空穴输运在GaN外延层中

Nature Communications

IF15.7

2025-07-120

Theoretical insights into the interface performance of Ga2O3/ZnO heterostructure photodetectors driven by polarization and strains

由极化和应变驱动的Ga2O3/ZnO异质结构光电探测器的界面性能的理论见解

Computational Materials Science

IF3.3

2025-06-030

Radiation resistance and defect evolution in bulk β-Ga2O3: a molecular dynamics study

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2025-04-210

PRE

Origin of two-dimensional hole gas at the hydrogen-terminated diamond surfaces: Negative interface valence-induced upward band bending

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

IF14.3

2025-02-010

PRE

Density Functional Analysis of Threshold Voltage Control by Oxide Dipole Layers in Si- and MoS2-Based FETs

硅和MoS2-Based fet中氧化物偶极层对阈值电压控制的密度泛函分析

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2025-01-070

Theoretical insights into the interface engineering of /3-Ga 2 O 3 devices with ferroelectric HfO2 gate dielectric: Impact of polarization direction

具有铁电HfO2栅极电介质的/3-Ga 2 O 3器件界面工程的理论见解: 极化方向的影响

SURFACES AND INTERFACES

IF6.3

2025-01-010

PRE

Quantum transport in WSe 2 /SnSe 2 tunneling field effect transistors with high- k gate dielectrics

高k栅介质WSe 2 /SnSe 2隧穿场效应晶体管中的量子输运

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

IF14.3

2024-12-011

PRE

Softening of the optical phonon by reduced interatomic bonding strength without depolarization

光学声子的软化是由原子间键合强度的减弱引起的，且未发生去极化。

Nature

IF48.5

2024-10-300

PRE

Electronic Properties of Janus TMD WSSe/WX2 (X = S, Se) Heterostructure by External Strain: A Hybrid Functional Study

ACS APPLIED ENERGY MATERIALS

IF5.5

2024-10-270

PRE

Atomic and electronic properties of the metal/diamond (100) interfaces by first-principles calculations

通过第一性原理计算金属/金刚石 (100) 界面的原子和电子性质

SURFACES AND INTERFACES

IF6.3

2024-09-010

PRE

Tunability of 2D Graphene/H-diamane heterostructure under external electric field and strain engineering

APPLIED SURFACE SCIENCE

IF6.9

2024-08-012

PRE

Electronic structures of metal/H-diamond (111) interfaces by ab-initio studies

从头算研究金属/H-金刚石 (111) 界面的电子结构

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-06-141

PRE

Robust type-III C3N/Ga2O3 van der Waals heterostructures

VACUUM

IF3.9

2024-06-011

PRE

Electrode and Electrolyte Co-Energy-Storage Electrochemistry Enables High-Energy Zn-S Decoupled Batteries

电极和电解质共储能电化学使高能zn-s解耦电池成为可能

SMALL

IF12.1

2024-06-010

PRE

Oxygen vacancy related hole fast trapping in high mobility cubic-Ge/ZrO2 interface

高迁移率立方Ge/ZrO2界面中与氧空位相关的空穴快速捕获

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-02-200

PRE

Electric field and strain engineering tuning of 2D Gr/α-Ga2O3 van der Waals heterostructures

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2023-01-016

PRE

Re-imagining the daniell cell: ampere-hour-level rechargeable Zn-Cu batteries

ENERGY & ENVIRONMENTAL SCIENCE

IF30.8

2023-01-0112

OAAI

Association between the severity of metabolic dysfunction-associated fatty liver disease and the risk of colorectal neoplasm: a systematic review and meta-analysis

代谢功能障碍相关脂肪性肝病严重程度与结直肠肿瘤风险之间的关联：一项系统综述和荟萃分析

LIPIDS IN HEALTH AND DISEASE

IF4.2

2022-06-0611

OAAI

Large lattice-relaxation-induced intrinsic shallow p-type characteristics in monolayer black phosphorus and black arsenic

APPLIED PHYSICS LETTERS

IF3.6

2021-02-228

PREAI

Ruyue Cao

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