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D

Dong Myong Kim

Kookmin University

32H指数
273论文数
3.8K被引数
收录论文 48
发表时间
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Impact of Proton Irradiation on SiNx and Si–SiO2 Interfaces in FLASH Memory Cell质子辐照对闪存单元中SiNx和Si–SiO2界面的影响
errNuclear Engineering and Technology
IF2.6
err2026-05-19
err0
errOAAI
errHaesung Kim; Junseong Park; Jisung Im; Hansol Kim; Yu-Mi Kim; Kwanseo Park; Sung-Jin Choi; Dae Hwan Kim; Dong Myong Kim; Young Jun Yoon; Sung Yun Woo; Jong-Ho Bae
err分享
err收藏
Lateral Profile of Doping Concentration Extracted From the C-V Characteristics in Self-Aligned Top-Gate Coplanar InGaZnO Thin-Film Transistors从自对准顶栅共面InGaZnO薄膜晶体管的C-V特性中提取的掺杂浓度横向分布
errAdvanced Electronic Materials
IF5.3
err2026-04-22
err0
errOAAI
errSeung Joo Myoung; Chang Il Ryoo; Jingyu Park; Dong Hyeop Shin; Su Han Noh; Sae Him Jung; Soohong Eo; Wonjung Kim; Sung Jun Yun; Jae Moon Soh; Yoo Seok Park; Changwook Kim; Dong Myong Kim; Sung-Jin Choi; Yoon Jung Lee; Ickhyun Song; Dae Hwan Kim
err分享
err收藏
Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in HfxZr1-xO2/SiO2 Interface in Ferroelectric Field-Effect-Transistor
errADVANCED ELECTRONIC MATERIALS
IF5.3
err2025-12-01
err0
errOAAI
errLee, Haneul; Kim, Sujong; Han, Changhyeon; Kim, Haesung; Yang, Hyojin; Park, Sejun; Yun, Sanghyuk; Lee, Yoon Jung; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong; Kwon, Daewoong; Bae, Jong-Ho
err分享
err收藏
Defect-mediated enhancement of memory window in IGZO-channel ferroelectric field effect transistorsIGZO通道铁电场效应晶体管中缺陷介导的记忆窗口增强
errMaterials Science in Semiconductor Processing
IF4.6
err2025-11-24
err0
PREAI
errHyojin Yang; Haesung Kim; Hwan Jin Kim; Dong Myong Kim; Sung-Jin Choi; Dae Hwan Kim; Yoon Jung Lee; Jong-Ho Bae
err分享
err收藏
Simulation of a randomly percolated CNT network for an improved analog physical unclonable function
errSCIENTIFIC REPORTS
IF3.9
err2024-04-16
err0
errOAAI
errYang, Hyo-In; Lee, Hanbin; Ko, Jeonghee; An, Yulim; Min, Gyeongsu; Kim, Dong Myong; Kim, Dae Hwan; Bae, Jong-Ho; Lim, Meehyun; Choi, Sung-Jin
err分享
err收藏
Gate Capacitance Coupling of Double-Gate Carbon Nanotube Network Transistors双栅碳纳米管网络晶体管的栅电容耦合
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2024-01-25
err0
PREAI
errAn, Yulim; Lee, Hanbin; Ko, Jeonghee; Yang, Hyo-In; Min, Gyeongsu; Kim, Dong Myong; Bae, Jong-Ho; Kim, Dae Hwan; Kang, Min-Ho; Choi, Sung-Jin
err分享
err收藏
Comprehensive analysis of read-after-write latency in HfZrOX-based ferroelectric field-effect-transistors with SiO2 interfacial layer
errAPPLIED PHYSICS LETTERS
IF3.6
err2024-01-18
err0
PREAI
errKim, Haesung; Yang, Hyojin; Lee, Seongwon; Yun, Sanghyuk; Park, Junseong; Park, Sejun; Lee, Ha-Neul; Kim, Hyeonsik; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong; Kwon, Daewoong; Bae, Jong-Ho
err分享
err收藏
Improvement of the Symmetry and Linearity of Synaptic Weight Update by Combining the InGaZnO Synaptic Transistor and Memristor结合InGaZnO突触晶体管和忆阻器提高突触权重更新的对称性和线性度
errIEEE ACCESS
IF3.6
err2024-01-01
err4
errOAAI
errYang, Tae Jun; Cho, Jung Rae; Lee, Hyunkyu; Lee, Hee Jun; Myoung, Seung Joo; Lee, Da Yeon; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Changwook; Woo, Jiyong; Kim, Dae Hwan
err分享
err收藏
Exploration of structural influences on the ferroelectric switching characteristics of ferroelectric thin-film transistors
errNANOSCALE
IF5.1
err2024-01-01
err0
PREAI
errYang, Hyojin; Park, Sejun; Yun, Sanghyuk; Kim, Haesung; Lee, Haneul; Park, Min-Kyu; Choi, Sung-Jin; Kim, Dae Hwan; Kim, Dong Myong; Kwon, Dongseok; Bae, Jong-Ho
err分享
err收藏
Short- and Long-Term Memory Based on a Floating-Gate IGZO Synaptic Transistor基于浮栅IGZO突触晶体管的短期和长期存储器
errIEEE ACCESS
IF3.6
err2023-01-01
err4
errOAAI
errKang, Dongyeon; Kim, Wonjung; Jang, Jun Tae; Kim, Changwook; Kim, Jung Nam; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Yoon; Kim, Dae Hwan
err分享
err收藏
Effect of oxygen flow rate on long-term and short-term Schottky barrier modulations in Pd/IGZO/SiO2/p+-Si memristors
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-01-01
err3
PREAI
errLee, Hee Jun; Kim, Donguk; Choi, Woo Sik; Kim, Changwook; Choi, Sung-Jin; Kim, Dong Myong; Kim, Sungjun; Kim, Dae Hwan; Bae, Jong-Ho
err分享
err收藏
Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors后退火对Pd/IGZO/SiO2/p-si忆阻器势垒调制的影响
errNANOMATERIALS
IF4.3
err2022-10-13
err3
errOAAI
errKim, Donguk; Lee, Hee Jun; Yang, Tae Jun; Choi, Woo Sik; Kim, Changwook; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Sungjun; Kim, Dae Hwan
err分享
err收藏
Compact SPICE Model of Memristor with Barrier Modulated Considering Short- and Long-Term Memory Characteristics by IGZO Oxygen Content
errMICROMACHINES
IF3
err2022-09-28
err2
errOAAI
errKim, Donguk; Lee, Hee Jun; Yang, Tae Jun; Choi, Woo Sik; Kim, Changwook; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Sungjun; Kim, Dae Hwan
err分享
err收藏
Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors
errMICROMACHINES
IF3
err2021-03-19
err17
errOAAI
errKim, Je-Hyuk; Jang, Jun Tae; Bae, Jong-Ho; Choi, Sung-Jin; Kim, Dong Myong; Kim, Changwook; Kim, Yoon; Kim, Dae Hwan
err分享
err收藏
Threshold-Variation-Tolerant Coupling-Gate α-IGZO Synaptic Transistor for More Reliably Controllable Hardware Neuromorphic System
errIEEE ACCESS
IF3.6
err2021-01-01
err21
errOAAI
errKang, Dongyeon; Jang, Jun Tae; Park, Shinyoung; Ansari, Md. Hasan Raza; Bae, Jong-Ho; Choi, Sung-Jin; Kim, Dong Myong; Kim, Changwook; Cho, Seongjae; Kim, Dae Hwan
err分享
err收藏
Humidity Effects According to the Type of Carbon Nanotubes
errIEEE ACCESS
IF3.6
err2021-01-01
err11
errOAAI
errLee, Yongwoo; Yoon, Jinsu; Kim, Yeamin; Kim, Dong Myong; Kim, Dae Hwan; Choi, Sung-Jin
err分享
err收藏
One Transistor-Two Memristor Based on Amorphous Indium-Gallium-Zinc-Oxide for Neuromorphic Synaptic Devices
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2020-08-04
err24
PREAI
errJang, Jun Tae; Kim, Donguk; Choi, Woo Sik; Choi, Sung-Jin; Kim, Dong Myong; Kim, Yoon; Kim, Dae Hwan
err分享
err收藏
Pd/IGZO/p+-Si Synaptic Device with Self-Graded Oxygen Concentrations for Highly Linear Weight Adjustability and Improved Energy Efficiency
errACS APPLIED ELECTRONIC MATERIALS
IF4.7
err2020-07-24
err20
PREAI
errKim, Donguk; Jang, Jun Tae; Yu, Eunseon; Park, Jingyu; Min, Jungi; Kim, Dong Myong; Choi, Sung-Jin; Mo, Hyun-Sun; Cho, Seongjae; Roy, Kaushik; Kim, Dae Hwan
err分享
err收藏
Digital and Analog Switching Characteristics of InGaZnO Memristor Depending on Top Electrode Material for Neuromorphic System基于顶电极材料的InGaZnO忆阻器的数字和模拟开关特性
errIEEE ACCESS
IF3.6
err2020-01-01
err32
errOAAI
errJang, Jun Tae; Min, Jungi; Hwang, Yeongjin; Choi, Sung-Jin; Kim, Dong Myong; Kim, Hyungjin; Kim, Dae Hwan
err分享
err收藏
Effect of Simultaneous Mechanical and Electrical Stress on the Electrical Performance of Flexible In-Ga-Zn-O Thin-Film Transistors
errMATERIALS
IF3.2
err2019-10-04
err16
errOAAI
errSeo, Youngjin; Jeong, Hwan-Seok; Jeong, Ha-Yun; Park, Shinyoung; Jang, Jun Tae; Choi, Sungju; Kim, Dong Myong; Choi, Sung-Jin; Jin, Xiaoshi; Kwon, Hyuck-In; Kim, Dae Hwan
err分享
err收藏

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合作期刊
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T
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Y
Yang‐Kyu Choi
H 指数: 62 · 论文数: 423
S
Sang‐Wook Kim
H 指数: 57 · 论文数: 451
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