Nobuyuki Aoki

department of materials science, chiba university, chiba 263-8522, japan

H指数:25

被引数:3,017

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教育背景

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工作经历

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荣誉奖项

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Modulating electronic transport properties of wafer-scale vapor–liquid–solid grown tungsten nitride by a vacuum gentle heating method

通过真空温和加热方法调控晶圆级气-液-固生长的氮化钨的电子输运特性

Nanotechnology

IF4.1

2025-11-180

OAAI

Mesoscopic Interference of Rotated Spins in Graphene Coupled to High-Spin–Orbit-Coupling Substrates

石墨烯中旋转自旋的介观干涉及其与强自旋-轨道耦合衬底耦合的研究

ACS Applied Materials & Interfaces

IF8.2

2025-10-200

OAAI

Electrical Impedance Tomography (EIT)-Based Intracellular Conductivity Imaging for Non-invasive Cell Detection

基于 Electrical Impedance Tomography (EIT) 的细胞内电导率成像用于非侵入式细胞检测

Lab Chip

IF0

2025-09-290

High mobility field-effect transistors produced by direct growth of C70 single crystals from a solution

通过从溶液中直接生长C70单晶制备的高迁移率场效应晶体管

j mater chem a

IF0

2025-08-210

Electrostatic control of transconductance oscillations in MoS2/WSe2 heterostructure

MoS2/WSe2异质结构中跨导振荡的静电控制

nanotechnology

IF2.8

2025-04-030

PRE

Advances in spin properties of plant leaf-derived graphene quantum dots from materials to applications

从材料到应用：植物叶片衍生石墨烯量子点的自旋特性研究进展

nanotechnology

IF2.8

2025-02-200

PRE

Contact Properties on a Semiconducting MoTe2 Crystal Using Polymorphic Structures

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-09-100

PRE

Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique

APPLIED PHYSICS LETTERS

IF3.6

2024-05-243

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple-Gated Point Contact Device

ADVANCED MATERIALS TECHNOLOGIES

IF6.2

2024-04-181

PRE

Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering

通过接触工程形成的WSe2横向p-n同质结中的无掺杂高性能光伏效应

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-07-133

PRE

Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts

用WSe2表面和边缘双触点实现的自形成p-n结二极管

SMALL

IF12.1

2022-10-1016

PRE

A method for finding the background potential of quantum devices from scanning gate microscopy data using machine learning

MACHINE LEARNING-SCIENCE AND TECHNOLOGY

IF4.6

2022-06-205

Enhanced Performance of WS2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts

通过单层和双层h-bn隧穿接触增强WS2场效应晶体管的性能

SMALL

IF12.1

2022-02-0344

Signature of Spin-Resolved Quantum Point Contact in p-Type Trilayer WSe2 van der Waals Heterostructure

p型三层WSe2范德华异质结构中自旋分辨量子点接触的特征

NANO LETTERS

IF9.1

2021-09-027

Valley polarized conductance quantization in bilayer graphene narrow quantum point contact

APPLIED PHYSICS LETTERS

IF3.6

2021-06-309

PREAI

Quantized exciton-exciton annihilation in monolayer WS2 on SrTiO3 substrate with atomically flat terraces

具有原子平坦台阶的SrTiO3衬底上单层WS2中的量子化激子-激子an灭

PHYSICAL REVIEW B

IF3.7

2021-06-216

Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets

CARBON

IF11.6

2019-12-017

OAAI

Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping

ACS OMEGA

IF4.3

2019-02-2218

OAAI

Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors

ACS NANO

IF16

2016-10-0532

PREAI

Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors

单层MoS2晶体管中的热辅助非易失性存储器

NANO LETTERS

IF9.1

2016-09-2851

PREAI

Nobuyuki Aoki

个人简介

教育背景

工作经历

荣誉奖项

研究方向