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Nobuyuki Aoki

department of materials science, chiba university, chiba 263-8522, japan

25H指数
312论文数
3.0K被引数
收录论文 75
发表时间
Modulating electronic transport properties of wafer-scale vapor–liquid–solid grown tungsten nitride by a vacuum gentle heating method通过真空温和加热方法调控晶圆级气-液-固生长的氮化钨的电子输运特性
err2025-11-18
err0
errOAAI
errYuan-Chih Hung; Sheng-Zong Chen; Wei-Cheng Lin; Yong-Cheng Lai; Hao-Ting Chin; Meng-Ting Wu; Jia-Ren Wu; Ding-Rui Chen; Sheng-Kuei Chiu; Gil-Ho Kim; Nobuyuki Aoki; Ya-Ping Hsieh; Chi-Te Liang; Chiashain Chuang
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Mesoscopic Interference of Rotated Spins in Graphene Coupled to High-Spin–Orbit-Coupling Substrates石墨烯中旋转自旋的介观干涉及其与强自旋-轨道耦合衬底耦合的研究
err2025-10-20
err0
errOAAI
errKazushi Yokoi; Ratchanok Somphonsane; Harihara Ramamoorthy; Nargess Arabchigavkani; Keke He; Bilal Barut; Shenchu Yin; Michael D. Randle; Ripudaman Dixit; Jubin Nathawat; Jonas Fransson; Gil-Ho Kim; Kenji Watanabe; Takashi Taniguchi; Jonathan P. Bird; Nobuyuki Aoki
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High mobility field-effect transistors produced by direct growth of C70 single crystals from a solution通过从溶液中直接生长C70单晶制备的高迁移率场效应晶体管
err2025-08-21
err0
errOAAI
errYuto Sakai; Taiyo Araki; Ryo Suzuki; Toshiyuki Sasaki; Kouhei Ichiyanagi; Tadahiko Hirai; Nobuyuki Aoki; Masaru Tachibana
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Electrostatic control of transconductance oscillations in MoS2/WSe2 heterostructureMoS2/WSe2异质结构中跨导振荡的静电控制
err2025-04-03
err0
PREAI
errPhan, Nhat Anh Nguyen; Uddin, Inayat; Thi, Hai Yen Le; Aoki, Nobuyuki; Kim, Hye Jung; Taniguchi, Takashi; Khan, Muhammad Atif; Kim, Gil-Ho
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Contact Properties on a Semiconducting MoTe2 Crystal Using Polymorphic Structures
err2024-09-10
err0
PREAI
errXie, Tianshun; Ke, Mengnan; Kruger, Peter; Ueno, Keiji; Aoki, Nobuyuki
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Realization of single MoTe2 crystal in-plane TFET by laser-induced doping technique
err2024-05-24
err3
errOAAI
errXie, Tianshun; Ke, Mengnan; Ueno, Keiji; Watanabe, Kenji; Taniguchi, Takashi; Aoki, Nobuyuki
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Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple-Gated Point Contact Device
err2024-04-18
err1
PREAI
errPhan, Nhat Anh Nguyen; Uddin, Inayat; Le Thi, Hai Yen; Aoki, Nobuyuki; Kim, Hye Jung; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho
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Doping-Free High-Performance Photovoltaic Effect in a WSe2 Lateral p-n Homojunction Formed by Contact Engineering通过接触工程形成的WSe2横向p-n同质结中的无掺杂高性能光伏效应
err2023-07-13
err3
PREAI
errLe Thi, Hai Yen; Ngo, Tien Dat; Phan, Nhat Anh Nguyen; Shin, Hoseong; Uddin, Inayat; Venkatesan, A.; Liang, Chi-Te; Aoki, Nobuyuki; Yoo, Won Jong; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho
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Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts用WSe2表面和边缘双触点实现的自形成p-n结二极管
errSMALL
IF12.1
err2022-10-10
err16
PREAI
errHai Yen Le Thi; Tien Dat Ngo; Nhat Anh Nguyen Phan; Yoo, Won Jong; Watanabe, Kenji; Taniguchi, Takashi; Aoki, Nobuyuki; Bird, Jonathan P.; Kim, Gil-Ho
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Enhanced Performance of WS2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts通过单层和双层h-bn隧穿接触增强WS2场效应晶体管的性能
errSMALL
IF12.1
err2022-02-03
err44
errOAAI
errPhan, Nhat Anh Nguyen; Noh, Hamin; Kim, Jihoon; Kim, Yewon; Kim, Hanul; Whang, Dongmok; Aoki, Nobuyuki; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho
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Signature of Spin-Resolved Quantum Point Contact in p-Type Trilayer WSe2 van der Waals Heterostructurep型三层WSe2范德华异质结构中自旋分辨量子点接触的特征
err2021-09-02
err7
errOAAI
errSakanashi, Kohei; Kruger, Peter; Watanabe, Kenji; Taniguchi, Takashi; Kim, Gil-Ho; Ferry, David K.; Bird, Jonathan P.; Aoki, Nobuyuki
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Valley polarized conductance quantization in bilayer graphene narrow quantum point contact
err2021-06-30
err9
PREAI
errSakanashi, Kohei; Wada, Naoto; Murase, Kentaro; Oto, Kenichi; Kim, Gil-Ho; Watanabe, Kenji; Taniguchi, Takashi; Bird, Jonathan P.; Ferry, David K.; Aoki, Nobuyuki
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Conductance interference effects in an electron-beam-resist-free chemical vapor deposition graphene device sandwiched between two h-BN sheets
errCARBON
IF11.6
err2019-12-01
err7
errOAAI
errChuang, Chiashain; Mineharu, Masaaki; Matsunaga, Masahiro; Liu, Chieh-Wen; Wu, Bi-Yi; Kim, Gil-Ho; Watanabe, Kenji; Taniguchi, Takashi; Liang, Chi-Te; Aoki, Nobuyuki
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Transient Response of h-BN-Encapsulated Graphene Transistors: Signatures of Self-Heating and Hot-Carrier Trapping
err2019-02-22
err18
errOAAI
errNathawat, Jubin; Zhao, Miao; Kwan, Chun-Pui; Yin, Shenchu; Arabchigavkani, Nargess; Randle, Michael; Ramamoorthy, Harihara; He, Guanchen; Somphonsane, Ratchanok; Matsumoto, Naoki; Sakanashi, Kohei; Kida, Michio; Aoki, Nobuyuki; Jin, Zhi; Kim, Yunseob; Kim, Gil-Ho; Watanabe, Kenji; Taniguchi, Takashi; Bird, Jonathan P.
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Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS2 Transistors
err2016-10-05
err32
PREAI
errMatsunaga, Masahiro; Higuchi, Ayaka; He, Guanchen; Yamada, Tetsushi; Kruger, Peter; Ochiai, Yuichi; Gong, Yongji; Vajtai, Robert; Ajayan, Pulickel M.; Bird, Jonathan P.; Aoki, Nobuyuki
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Thermally Assisted Nonvolatile Memory in Monolayer MoS2 Transistors单层MoS2晶体管中的热辅助非易失性存储器
err2016-09-28
err51
PREAI
errHe, G.; Ramamoorthy, H.; Kwan, C. -P.; Lee, Y. -H.; Nathawat, J.; Somphonsane, R.; Matsunaga, M.; Higuchi, A.; Yamanaka, T.; Aoki, N.; Gong, Y.; Zhang, X.; Vajtai, R.; Ajayan, P. M.; Bird, J. P.
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