Dae‐Hong Ko - Publications, H-index & Citations

Dae‐Hong Ko

Yonsei University

27H指数

204论文数

2.8K被引数

收录论文 55

发表时间

Selective chemical wet etching of B-doped Si_0.8Ge_0.2 epitaxial layers for multistacked memory devices 选择性化学湿法刻蚀B掺杂Si_0.8Ge_0.2外延层用于多堆叠存储器器件

Materials Science in Semiconductor Processing

IF4.6

2026-08-30

PREAI

Joosung Kang; Dongmin Yoon; Seonwoong Jung; Dae-Hong Ko

Characteristics of germanium tetrabromide (GeBr4) as a precursor for low-temperature selective epitaxial growth of Si1-xGex 四溴化锗(GeBr4)作为低温选择性外延生长Si1-xGex前驱体的特性

Chemical Engineering Journal

IF13.2

2026-08-01

PREAI

Shin, Hyerin; Oh, Seokmin; Yoon, Dongmin; Jung, Seonwoong; Kim, Jungwoo; Hwang, Chiwon; Park, Gyuhee; Ko, Dae-Hong

Melting-depth-dependent microstructural and strain evolution in embedded SiGe(:B) nanostructures under nanosecond laser annealing 在嵌入的SiGe(:B)纳米结构中，熔化深度依赖的微观结构和应变演化在纳秒激光退火下的研究

Journal of Alloys and Compounds

IF6.3

2026-05-07

PREAI

Chunghee Jo; Dongmin Yoon; Hyerin Shin; Hyun Cho; Dae-Hong Ko

Thickness-controlled stoichiometry governs interfacial stability of nickel silicide under nanosecond laser annealing 厚度调控的化学计量比支配镍硅化物在纳秒激光退火下的界面稳定性

Surfaces and Interfaces

IF6.3

2026-04-23

PREAI

Hyun Cho; Dongmin Yoon; Chunghee Jo; Kiseok Lee; Hyerin Shin; Jungwoo Kim; Minho Jeong; Whankyun Kim; Eunji Jung; Sunjung Kim; Dae-Hong Ko

Effects of active carrier concentration and Ge content on the contact resistivity of boron-doped Si1-xGex films produced by ion implantation and subsequent nanosecond laser annealing 离子注入及后续纳秒激光退火制备的硼掺杂Si1-xGex薄膜中活性载体浓度和Ge含量对接触电阻率的影响

Journal of Alloys and Compounds

IF6.3

2026-04-22

PREAI

Kiseok Lee; Dongmin Yoon; Dae-Hong Ko

Deactivation Phenomena of Highly B-doped SiGe Epitaxial Films Subjected to Nanosecond Laser Annealing Followed by Rapid Thermal Annealing

Surfaces and Interfaces

IF6.3

2026-01-24

PREAI

Chunghee Jo; Dae-Hong Ko

Epitaxial growth of highly stacked SiGe(:B)/Si multilayers without strain relaxation for vertically stacked device applications 高堆叠SiGe(:B)/Si多层膜的弛豫应变未发生的外延生长，用于垂直堆叠器件应用

Materials Today

IF22

2025-12-30

PREAI

Dongmin Yoon; Seonwoong Jung; Hyerin Shin; Seokmin Oh; Jungwoo Kim; Dae-Hong Ko

Characteristics of Si channel layer formed through recrystallization using nanosecond laser annealing for monolithic 3D integration 采用纳秒激光退火再结晶形成的Si沟道层的特性，用于单片3D集成

Materials Science in Semiconductor Processing

IF4.6

2025-10-10

PREAI

Hyerin Shin; Dongmin Yoon; Chunghee Jo; Kiseok Lee; Hoonjung Oh; Dae-Hong Ko

Study on the interfaces between Si and SiGe in the epitaxial in-situ Boron-Doped SiGe/Si layers treated with H or Cl☆H或cl ☆ 处理的外延原位硼掺杂SiGe/Si层中Si和SiGe之间的界面研究

APPLIED SURFACE SCIENCE

IF6.9

2025-05-01

PREAI

Jung, Seonwoong; Yoon, Dongmin; Oh, Seokmin; Shin, Hyerin; Kim, Jungwoo; Ko, Dae-Hong

Enhanced biocidal efficacy of alcohol based disinfectants with salt additives

SCIENTIFIC REPORTS

IF3.9

2025-01-31

OAAI

Oh, Euna; Shin, Hyerin; Han, Sumin; Do, Soo Jee; Shin, Younseo; Pi, Ji Hee; Kim, Youngjin; Ko, Dae-Hong; Lee, Kyu Hyoung; Choi, Hyo-Jick

Quasicrystalline phase-change memory

SCIENTIFIC REPORTS

IF3.9

2020-08-13

OAAI

Lee, Eun-Sung; Yoo, Joung E.; Yoon, Du S.; Kim, Sung D.; Kim, Yongjoo; Hwang, Soobin; Kim, Dasol; Jeong, Hyeong-Chai; Kim, Won T.; Chang, Hye J.; Suh, Hoyoung; Ko, Dae-Hong; Cho, Choonghee; Choi, Yongjoon; Kim, Do H.; Cho, Mann-Ho

Quantification of point and line defects in Si0.6Ge0.4 alloys with thickness variation via optical pump-THz probe measurement

APPLIED SURFACE SCIENCE

IF6.9

2020-05-01

PREAI

Kim, Jonghoon; Jeong, Kwangsik; Baik, Min; Kim, Dae-Kyoung; Chae, Jimin; Park, Hanbum; Hong, Seok-Bo; Ko, Dae-Hong; Cho, Mann-Ho

Demonstration of Solar Cell on a Graphite Sheet with Carbon Diffusion Barrier Evaluation

MOLECULES

IF4.6

2020-02-12

OAAI

Cho, Hyelim; Kim, Jaeyeon; Park, Seran; Kim, Soobong; Kim, Hyunjong; Oh, Hoon-jung; Ko, Dae-Hong

Chemical bonding states and dopant redistribution of heavily phosphorus-doped epitaxial silicon films: Effects of millisecond laser annealing and doping concentration

APPLIED SURFACE SCIENCE

IF6.9

2020-02-01

PREAI

Ryu, H. -Y.; Lee, M.; Park, H.; Ko, D. -H.

Effect of surface iron on photoconductivity carrier recombination lifetime of p-type silicon

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2019-12-06

PREAI

Park, HS; Helms, CR; Ko, DH

Effects of Phosphorus Doping and Postgrowth Laser Annealing on the Structural, Electrical, and Chemical Properties of Phosphorus-Doped Silicon Films

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2019-02-25

PREAI

Lee, Minhyeong; Ryu, Hwa-Yeon; Ko, Eunjung; Ko, Dae-Hong

Polarity control in a single transition metal dichalcogenide (TMD) transistor for homogeneous complementary logic circuits

NANOSCALE

IF5.1

2019-01-01

PREAI

Shim, Jaewoo; Jang, Sung Woon; Lim, Ji-Hye; Kim, Hyeongjun; Kang, Dong-Ho; Kim, Kwan-Ho; Seo, Seunghwan; Heo, Keun; Shin, Changhwan; Yu, Hyun-Yong; Lee, Sungjoo; Ko, Dae-Hong; Park, Jin-Hong

Chemical state analysis of heavily phosphorus-doped epitaxial silicon films grown on Si (100) by X-ray photoelectron spectroscopy

APPLIED SURFACE SCIENCE

IF6.9

2018-06-01

PREAI

Lee, Minhyeong; Kim, Sungtae; Ko, Dae-Hong

Probing lattice vibration and strain states in highly phosphorus-doped epitaxial Si films

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2017-01-01

PREAI

Lee, Minhyeong; Ko, Eunjung; Ko, Dae-Hong