Myung Gwan Hahm

inha university

H指数:30

被引数:4,597

个人简介

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教育背景

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Engineering tunable porous carbon nanotube scaffolds for freestanding lithium–O2 battery electrodes

工程化可调多孔碳纳米管支架用于自支撑锂-氧电池电极

Functional Composites and Structures

IF3.3

2025-11-140

PRE

Substrate-Free Hydrothermal Synthesis of Atomically Thin Tellurene with Enhanced Morphological Control and Device-Ready Properties

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS

IF2

2025-10-010

PRE

A CMOS-integrable ambipolar tellurene nanofilm-based negative differential transconductance transistor for multi-valued logic computing

一种基于可集成的CMOS型双极碲烯纳米薄膜的负微分跨导晶体管，用于多值逻辑计算

Nanoscale

IF5.1

2025-07-270

PRE

Multifunctional CMOS-integrable and reconfigurable 2D ambipolar tellurene transistors for neuromorphic and in-memory computing

多功能CMOS集成与可重构的2D双极碲烯晶体管，用于神经形态和在内存计算

NANOSCALE HORIZONS

IF6.6

2025-01-010

PRE

Understanding Coulomb Scattering Mechanism in Ambipolar Tellurium Nanosheet Transistors

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-10-240

PRE

High-Performance 1D-2D Te/MoS2 Heterostructure Photodetectors with Tunable Giant Persistent Photoconductivity

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-07-311

PRE

Mechanically and Electrically Stable Hybrid Aerogels as Free-Standing Anodes for High-Capacity Lithium-Ion Battery

机械和电稳定的混合气凝胶作为高容量锂离子电池的独立阳极

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS

IF2

2024-05-221

PRE

An extremely low-power-consumption reconfigurable two-dimensional tellurene artificial synapse for bio-inspired wearable edge computing

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2024-01-017

Photoelectric Characteristics of Isotype Heterostructure p-WSe2/p-Si Photodetector with Improved Photoresponsivity and Detectivity

具有改善的光响应度和探测率的同型异质结构p-WSe2/p-si光电探测器的光电特性

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-08-170

PRE

Reinforcing Synaptic Plasticity of Defect-Tolerant States in Alloyed 2D Artificial Transistors

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-08-105

PRE

Nature of Photoconductivity in Self-Powered Single-Atomic-Layered Nb-Doped WSe2 Phototransistors

ACS PHOTONICS

IF6.7

2023-08-0112

PRE

Environmentally Stable and Reconfigurable Ultralow-Power Two-Dimensional Tellurene Synaptic Transistor for Neuromorphic Edge Computing

用于神经形态边缘计算的环境稳定和可重构的超低功耗二维碲突触晶体管

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-03-0715

PRE

Catalyst-free synthesis of sub-5 nm silicon nanowire arrays with massive lattice contraction and wide bandgap

NATURE COMMUNICATIONS

IF15.7

2022-06-2021

OAAI

Visualizing Line Defects in non-van der Waals Bi2O2Se Using Raman Spectroscopy

ACS NANO

IF16

2022-02-1516

PRE

How femtosecond laser irradiation can affect the gas sensing behavior of SnO2 nanowires toward reducing and oxidizing gases

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2021-09-0116

PRE

Doping-induced photocatalytic activity and hydrogen evolution of ZnS: V nanoparticles

CERAMICS INTERNATIONAL

IF5.6

2021-09-0124

PREAI

Accelerated Learning in Wide-Band-Gap AlN Artificial Photonic Synaptic Devices: Impact on Suppressed Shallow Trap Level

宽带隙AlN人工光子突触器件中的加速学习: 对抑制浅陷阱能级的影响

NANO LETTERS

IF9.1

2021-07-3021

PREAI

Brain-inspired ferroelectric Si nanowire synaptic device

APL MATERIALS

IF4.5

2021-03-0519

OAAI

Graphitic Nanocup Architectures for Advanced Nanotechnology Applications

NANOMATERIALS

IF4.3

2020-09-174

OAAI

Origin of high quantum efficiency in Si-based homoepitaxial InGaN/GaN light-emitting diodes

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-06-292

PREAI

Myung Gwan Hahm

个人简介

教育背景

工作经历

荣誉奖项

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