Mantu K. Hudait

Bradley Department of Electrical and Computer Engineering

H指数:37

被引数:4,455

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Impact of Arsenic- and Indium-Terminated InGaAs Stressors on Carrier Confinement; Strain; Defects; and Transport Properties of Tensile-Strained Ge

砷终止和铟终止的InGaAs应力层对载流子限制、应变、缺陷以及拉伸应变Ge的输运性质的影响

ACS Applied Electronic Materials

IF4.7

2025-11-040

OAAI

Heavy boron doping effects on biaxially tensile strained germanium (>1.5%) investigated via structural characterization; effective lifetime assessment and atomistic modeling

高硼掺杂对双轴张应变锗（>1.5%）的影响研究：通过结构表征、有效寿命评估和原子级建模

Nanoscale Adv.

IF4.6

2025-09-220

Optical constants and critical-point transitions in biaxially tensile-strained epitaxial thin films of germanium

PHYSICAL REVIEW APPLIED

IF4.4

2025-02-140

PRE

Lattice Matched Tunable Wavelength GeSn Quantum Well Laser Architecture: Theoretical Investigation

晶格匹配可调波长GeSn量子阱激光器结构: 理论研究

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2025-01-011

PRE

Elucidating the Role of InGaAs and InAlAs Buffers on Carrier Dynamics of Tensile-Strained Ge Double Heterostructures

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-06-060

OAAI

Monolithically Integrated ε-Ge/InxGa1-xAs Quantum Well Laser Design: Experimental and Theoretical Investigation

单片集成 ε-ge/InxGa1-xAs量子阱激光器设计: 实验和理论研究

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2024-05-016

PRE

Mapping the Ge/InAl(Ga)As interfacial electronic structure and strain relief mechanism in germanium quantum dots

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2024-01-011

GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation

NANOSCALE

IF5.1

2024-01-012

High-κ Gate Dielectric on Tunable Tensile Strained Germanium Heterogeneously Integrated on Silicon: Role of Strain, Process, and Interface States

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-08-171

PRE

Carrier Recombination Dynamics of Surface-Passivated Epitaxial (100)Ge, (110)Ge, and (111)Ge Layers by Atomic Layer Deposited Al2O3

原子层沉积的Al2O3表面钝化外延 (100)Ge，(110)Ge和 (111)Ge层的载流子复合动力学

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-05-244

PRE

Interplay Between Strain and Thickness on the Effective Carrier Lifetime of Buffer-Mediated Epitaxial Germanium Probed by the Photoconductance Decay Technique

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-05-192

PRE

Lattice matched GeSn/InAlAs heterostructure: role of Sn in energy band alignment, atomic layer diffusion and photoluminescence

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2023-01-011

PRE

Multivalley Electron Conduction at the Indirect-Direct Crossover Point in Highly Tensile-Strained Germanium

PHYSICAL REVIEW APPLIED

IF4.4

2022-12-2711

Temperature and doping-dependent interplay between the direct and indirect optical response in buffer-mediated epitaxial germanium

OPTICAL MATERIALS

IF4.2

2022-09-012

OAAI

Room-temperature intrinsic and extrinsic damping in polycrystalline Fe thin films

PHYSICAL REVIEW B

IF3.7

2022-05-1116

Mapping the Interfacial Electronic Structure of Strain-Engineered Epitaxial Germanium Grown on InxAl1-xAs Stressors

ACS OMEGA

IF4.3

2022-02-085

OAAI

High carrier lifetimes in epitaxial germanium-tin/Al(In)As heterostructures with variable tin compositions

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-0110

Carrier recombination dynamics and temperature dependent optical properties of InAs-GaSb heterostructures

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-014

Design, Theoretical, and Experimental Investigation of Tensile-Strained Germanium Quantum-Well Laser Structure

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-10-1419

Tri-gate GaN junction HEMT

三栅GaN结HEMT

APPLIED PHYSICS LETTERS

IF3.6

2020-10-0731

OAAI

Mantu K. Hudait

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