Ruge Quhe

beijing university of posts and telecommunications

H指数:46

被引数:7,520

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High-entropy enabled two-dimensional ferroelectricity and memristive synapses in van der Waals layered materials

高熵驱动的二维铁电性和忆阻突触在范德华层状材料中

Nature Communications

IF15.7

2026-10-010

OAAI

First-principles calculations of cubic boron arsenide surfaces

立方硼砷化物表面的第一性原理计算

APPLIED PHYSICS LETTERS

IF3.6

2024-08-192

PRE

Named entity recognition in the perovskite field based on convolutional neural networks and MatBERT

基于卷积神经网络和MatBERT的钙钛矿领域命名实体识别

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2024-05-012

PRE

Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications

用于高性能和低功耗电子应用的Sub-5 nm超薄In2O3晶体管

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-04-271

PRE

N- and P-type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors

单层氢化硼砷晶体管的N型和P型对称缩放行为

PHYSICAL REVIEW MATERIALS

IF3.4

2024-01-261

PRE

Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices

面向高性能器件的Sub-5 nm栅极全包围InP纳米线晶体管

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-12-280

PRE

Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics

不对称的导电路线和电势重新分布决定了层状铁电体中极化相关的电导率

NATURE NANOTECHNOLOGY

IF34.9

2023-11-307

PRE

Enhanced photogalvanic effect in MoSSe monolayer with grain boundaries

APPLIED PHYSICS LETTERS

IF3.6

2023-11-225

PRE

Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor

基于双极磁性半导体的拟议逻辑存储器件的量子输运模拟

PHYSICAL REVIEW APPLIED

IF4.4

2023-07-246

PRE

Super low contact resistance in monolayer MoS2 transistors

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY

IF7.5

2023-06-212

2D fin field-effect transistors

SCIENCE BULLETIN

IF21.1

2023-06-011

OAAI

Prediction of photogalvanic effect enhancement in Janus transition metal dichalcogenide monolayers induced by spontaneous curling

自发卷曲引起的Janus过渡金属二硫属化物单层中光电流效应增强的预测

APPLIED SURFACE SCIENCE

IF6.9

2023-05-0122

PRE

Zn Microbatteries Explore Ways for Integrations in Intelligent Systems

锌微电池探索智能系统集成的方法

SMALL

IF12.1

2023-03-2012

OAAI

Symmetric and Excellent Scaling Behavior in Ultrathin n- and p-Type Gate-All-Around InAs Nanowire Transistors

超薄n型和p型栅极全包围InAs纳米线晶体管中的对称和出色的缩放行为

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-02-2617

PRE

Flake Size Limits for Growth of Vertically Stacked Two-Dimensional Materials by Analytical Diffusion-Based Kinetic Model

通过基于扩散的动力学模型的垂直堆叠二维材料生长的薄片尺寸极限

CRYSTAL GROWTH & DESIGN

IF3.4

2022-08-293

PRE

3D Hierarchical Graphene-CNT Anode for Sodium-Ion Batteries: a First-Principles Assessment

用于钠离子电池的3D分级石墨烯-CNT阳极: 第一性原理评估

ADVANCED THEORY AND SIMULATIONS

IF2.9

2022-07-141

PRE

Performance Limit of Ultrathin GaAs Transistors

超薄GaAs晶体管的性能极限

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-05-1633

PRE

Scaling Behavior of Magnetoresistance with the Layer Number in CrI3 Magnetic Tunnel Junctions

PHYSICAL REVIEW APPLIED

IF4.4

2022-03-1015

PRE

Device performance and strain effect of sub-5 nm monolayer InP transistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-0117

PRE

Armchair Janus MoSSe Nanoribbon with Spontaneous Curling: A First-Principles Study

自发卷曲的扶手椅Janus MoSSe纳米带: 第一性原理研究

NANOMATERIALS

IF4.3

2021-12-196

OAAI

Ruge Quhe

个人简介

教育背景

工作经历

荣誉奖项

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