Ruge Quhe - Publications, H-index & Citations

Ruge Quhe

beijing university of posts & telecommunications

46H指数

139论文数

7.5K被引数

收录论文 78

发表时间

First-principles calculations of cubic boron arsenide surfaces 立方硼砷化物表面的第一性原理计算

APPLIED PHYSICS LETTERS

IF3.6

2024-08-19

PREAI

Sun, Yuxuan; Niu, Yinge; Zhang, Lingxue; Zhang, Jiaxin; Quhe, Ruge

Named entity recognition in the perovskite field based on convolutional neural networks and MatBERT 基于卷积神经网络和MatBERT的钙钛矿领域命名实体识别

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2024-05-01

PREAI

Zhang, Jiaxin; Zhang, Lingxue; Sun, Yuxuan; Li, Wei; Quhe, Ruge

Sub-5 nm Ultrathin In2O3 Transistors for High-Performance and Low-Power Electronic Applications 用于高性能和低功耗电子应用的Sub-5 nm超薄In2O3晶体管

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-04-27

PREAI

Xu, Linqiang; Xu, Lianqiang; Lan, Jun; Li, Yida; Li, Qiuhui; Wang, Aili; Guo, Ying; Ang, Yee Sin; Quhe, Ruge; Lu, Jing

N- and P-type symmetric scaling behavior of monolayer hydrogenated boron arsenide transistors 单层氢化硼砷晶体管的N型和P型对称缩放行为

PHYSICAL REVIEW MATERIALS

IF3.4

2024-01-26

PREAI

Li, Qiuhui; Zheng, Tao; Xu, Lin; Fang, Shibo; Yang, Zongmeng; Xu, Linqiang; Li, Ying; Wu, Baochun; Yang, Xingyue; Quhe, Ruge; Ying, Guo; Lu, Jing

Sub-5 nm Gate-All-Around InP Nanowire Transistors toward High-Performance Devices 面向高性能器件的Sub-5 nm栅极全包围InP纳米线晶体管

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-12-28

PREAI

Xu, Linqiang; Xu, Lianqiang; Li, Qiuhui; Fang, Shibo; Li, Ying; Guo, Ying; Wang, Aili; Quhe, Ruge; Ang, Yee Sin; Lu, Jing

Asymmetric conducting route and potential redistribution determine the polarization-dependent conductivity in layered ferroelectrics 不对称的导电路线和电势重新分布决定了层状铁电体中极化相关的电导率

NATURE NANOTECHNOLOGY

IF34.9

2023-11-30

PREAI

Quhe, Ruge; Di, Ziye; Zhang, Jiaxin; Sun, Yuxuan; Zhang, Lingxue; Guo, Ying; Wang, Shuiyuan; Zhou, Peng

Enhanced photogalvanic effect in MoSSe monolayer with grain boundaries

APPLIED PHYSICS LETTERS

IF3.6

2023-11-22

PREAI

Sun, Naizhang; Ye, Han; Zhou, Wenlin; Yang, Ruhao; Quhe, Ruge; Liu, Yumin; Chen, Zhihui

Quantum Transport Simulations of a Proposed Logic-In-Memory Device Based on a Bipolar Magnetic Semiconductor 基于双极磁性半导体的拟议逻辑存储器件的量子输运模拟

PHYSICAL REVIEW APPLIED

IF4.4

2023-07-24

PREAI

Ke, Yunzhe; Li, Wei; Yin, Guoxue; Zhang, Lingxue; Quhe, Ruge

Super low contact resistance in monolayer MoS2 transistors

SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY

IF7.5

2023-06-21

OAAI

Li, Qiuhui; Yang, Xingyue; Quhe, Ruge; Lu, Jing

2D fin field-effect transistors

SCIENCE BULLETIN

IF21.1

2023-06-01

OAAI

Quhe, Ruge; Li, Qiuhui; Yang, Xingyue; Lu, Jing

Prediction of photogalvanic effect enhancement in Janus transition metal dichalcogenide monolayers induced by spontaneous curling 自发卷曲引起的Janus过渡金属二硫属化物单层中光电流效应增强的预测

APPLIED SURFACE SCIENCE

IF6.9

2023-05-01

PREAI

Sun, Naizhang; Ye, Han; Quhe, Ruge; Liu, Yumin; Wang, Mingchao

Zn Microbatteries Explore Ways for Integrations in Intelligent Systems 锌微电池探索智能系统集成的方法

SMALL

IF12.1

2023-03-20

OAAI

Ma, Jiachen; Quhe, Ruge; Zhang, Wenlan; Yan, Yaping; Tang, Hongmei; Qu, Zhe; Cheng, Yapeng; Schmidt, Oliver G.; Zhu, Minshen

Symmetric and Excellent Scaling Behavior in Ultrathin n- and p-Type Gate-All-Around InAs Nanowire Transistors 超薄n型和p型栅极全包围InAs纳米线晶体管中的对称和出色的缩放行为

ADVANCED FUNCTIONAL MATERIALS

IF19

2023-02-26

PREAI

Li, Qiuhui; Yang, Chen; Xu, Lin; Liu, Shiqi; Fang, Shibo; Xu, Linqiang; Yang, Jie; Ma, Jiachen; Li, Ying; Wu, Baochun; Quhe, Ruge; Tang, Kechao; Lu, Jing

Flake Size Limits for Growth of Vertically Stacked Two-Dimensional Materials by Analytical Diffusion-Based Kinetic Model 通过基于扩散的动力学模型的垂直堆叠二维材料生长的薄片尺寸极限

CRYSTAL GROWTH & DESIGN

IF3.4

2022-08-29

PREAI

Ye, Han; Xiang, Xinshuang; Wang, Mingchao; Sun, Naizhang; Wang, Yujing; Quhe, Ruge; Liu, Yumin; Guo, Zhenlin

3D Hierarchical Graphene-CNT Anode for Sodium-Ion Batteries: a First-Principles Assessment 用于钠离子电池的3D分级石墨烯-CNT阳极: 第一性原理评估

ADVANCED THEORY AND SIMULATIONS

IF2.9

2022-07-14

PREAI

Ma, Jiachen; Yang, Chen; Li, Qiuhui; Liu, Shiqi; Xu, Linqiang; Fang, Shibo; Sun, Xiaotian; Quhe, Ruge; Pan, Feng; Lu, Jing

Performance Limit of Ultrathin GaAs Transistors 超薄GaAs晶体管的性能极限

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2022-05-16

PREAI

Li, Qiuhui; Fang, Shibo; Liu, Shiqi; Xu, Lin; Xu, Linqiang; Yang, Chen; Yang, Jie; Shi, Bowen; Ma, Jiachen; Yang, Jinbo; Quhe, Ruge; Lu, Jing

Scaling Behavior of Magnetoresistance with the Layer Number in CrI3 Magnetic Tunnel Junctions

PHYSICAL REVIEW APPLIED

IF4.4

2022-03-10

PREAI

Wu, Baochun; Yang, Jie; Quhe, Ruge; Liu, Shiqi; Yang, Chen; Li, Qiuhui; Ma, Jiachen; Peng, Yuxuan; Fang, Shibo; Shi, Junjie; Yang, Jinbo; Lu, Jing; Du, Honglin

Device performance and strain effect of sub-5 nm monolayer InP transistors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-01

PREAI

Xu, Linqiang; Quhe, Ruge; Li, Qiuhui; Liu, Shiqi; Yang, Jie; Yang, Chen; Shi, Bowen; Tang, Hao; Li, Ying; Sun, Xiaotian; Yang, JinBo; Lu, Jing

Armchair Janus MoSSe Nanoribbon with Spontaneous Curling: A First-Principles Study 自发卷曲的扶手椅Janus MoSSe纳米带: 第一性原理研究

NANOMATERIALS

IF4.3

2021-12-19

OAAI

Sun, Naizhang; Wang, Mingchao; Quhe, Ruge; Liu, Yumin; Liu, Wenjun; Guo, Zhenlin; Ye, Han

Sub-10 nm two-dimensional transistors: Theory and experiment

PHYSICS REPORTS-REVIEW SECTION OF PHYSICS LETTERS

IF29.5

2021-11-01

126

PREAI

Quhe, Ruge; Xu, Lin; Liu, Shiqi; Yang, Chen; Wang, Yangyang; Li, Hong; Yang, Jie; Li, Qiuhui; Shi, Bowen; Li, Ying; Pan, Yuanyuan; Sun, Xiaotian; Li, Jingzhen; Weng, Mouyi; Zhang, Han; Guo, Ying; Xu, Linqiang; Tang, Hao; Dong, Jichao; Yang, Jinbo; Zhang, Zhiyong; Lei, Ming; Pan, Feng; Lu, Jing

研究方向