Tina T. Salguero

University of Georgia

H指数:22

被引数:2,274

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Radio-Frequency-Driven Modulation of the Mesoscale Charge-Density-Wave Landscape in 1T-TaS₂ Thin Films

射频驱动的1T-TaS<sub>2</sub>薄膜中尺度的电荷密度波景观调制

Advanced Functional Materials

IF19

2026-09-070

PRE

Giant gate response of the charge in an electron–lattice condensate

电子晶格冷凝物中电荷的巨型门响应

Nature Electronics

IF40.9

2026-06-040

PRE

Electrically and Magnetically Tunable Charge–Density–Wave Transport in Quasi-2D h-BN/1T-TaS2 Field Effect Devices

电学和磁学调控的准二维h-BN/1T-TaS2场效应器件中的电荷密度波输运

Advanced Electronic Materials

IF5.3

2026-05-060

A quieter state of charge and ultra-low-noise of the collective current in quasi-1D charge-density-wave nanowires

准一维电荷密度波纳米线中集体电流的较低充电状态和超低噪声

Nature Communications

IF15.7

2025-12-310

OAAI

Thermally Driven Formation of Multiphase; Mixed-Dimensional Architectures from TaSe3 Nanoribbons

热驱动下TaSe3纳米带多相、混合维数结构的形成

ACS Nano

IF16

2025-10-200

Achieving the 1D Atomic Chain Limit in Van der Waals Crystals

在范德华晶体中实现一维原子链极限

ADVANCED MATERIALS

IF26.8

2024-10-140

PRE

Development of Inks with Fillers of NbS3 Quasi-One-Dimensional Charge-Density-Wave Material

NbS3准一维电荷密度波材料填料油墨的研制

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-06-041

PRE

Electric-field modulation of the charge-density-wave quantum condensate in h-BN/NbS3 quasi-2D/1D heterostructure devices

H-bn/NbS3 quasi-2D/1D异质结构器件中电荷密度波量子凝聚体的电场调制

APPLIED PHYSICS LETTERS

IF3.6

2023-12-053

PRE

Machine-Learning-Driven Expansion of the 1D van der Waals Materials Space

机器学习驱动的一维范德华材料空间扩展

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2023-10-275

PRE

Quantum Composites with Charge-Density-Wave Fillers

具有电荷密度波填料的量子复合材料

ADVANCED MATERIALS

IF26.8

2023-03-227

Elemental excitations in MoI3 one-dimensional van der Waals nanowires

APPLIED PHYSICS LETTERS

IF3.6

2022-11-2824

Low‐Frequency Current Fluctuations in Quasi‐1D (TaSe ₄ ) ₂ I Weyl Semimetal Nanoribbons

Advanced Electronic Materials

IF5.3

2022-11-200

OAAI

Electrical Gating of the Charge-Density-Wave Phases in Two-Dimensional h-BN/1T-TaS2 Devices

二维h-bn/1T-TaS2器件中电荷密度波相的电选通

ACS NANO

IF16

2022-10-3118

One-dimensional van der Waals materials-Advent of a new research field

一维范德华材料 -- 一个新的研究领域的出现

APPLIED PHYSICS LETTERS

IF3.6

2022-07-2530

PRE

Impact of the chemical vapor transport agent on polymorphism in the quasi-1D NbS3 system

APPLIED PHYSICS LETTERS

IF3.6

2022-04-2614

Charge-Density-Wave Thin-Film Devices Printed with Chemically Exfoliated 1T-TaS2 Ink

用化学剥离的1T-TaS2墨水印刷的电荷密度波薄膜器件

ACS NANO

IF16

2022-03-2415

Metallic vs. semiconducting properties of quasi-one-dimensional tantalum selenide van der Waals nanoribbons

准一维硒化钽范德华纳米带的金属与半导体特性

NANOSCALE

IF5.1

2022-01-0114

PRE

Thermal Stability of Quasi-1D NbS3 Nanoribbons and Their Transformation to 2D NbS2: Insights from in Situ Electron Microscopy and Spectroscopy

CHEMISTRY OF MATERIALS

IF7

2021-12-219

Turning the Tide for Academic Women in STEM: A Postpandemic Vision for Supporting Female Scientists

ACS NANO

IF16

2021-12-0111

Electromagnetic-Polarization-Selective Composites with Quasi-1D Van der Waals Fillers: Nanoscale Material Functionality That Mimics Macroscopic Systems

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2021-04-3016

PREAI

Tina T. Salguero

个人简介

教育背景

工作经历

荣誉奖项

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