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C

C. Skierbiszewski

Institute of High Pressure Physics

33H指数
301论文数
4.3K被引数
收录论文 84
发表时间
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NbN-based Josephson junctions grown by plasma-assisted molecular beam epitaxyNbN基等离子体辅助分子束外延生长约瑟夫森结
errCommunications Materials
IF9.6
err2025-08-01
err0
errOAAI
errArtur Lachowski; Paweł Wolny; Krzysztof Dybko; Mikołaj Chlipała; Krzesimir Nowakowski-Szkudlarek; Mateusz Hajdel; Mikołaj Żak; Anna Feduniewicz; Marta Sawicka; Witold Chromiński; Ewa Grzanka; Czesław Skierbiszewski
err分享
err收藏
Distinctness of Electroluminescence and Optical Gain in Laser Diodes with Wide Polar Quantum Wells宽极化量子阱激光二极管中电致发光和光学增益的区分
errACS PHOTONICS
IF6.7
err2025-03-06
err0
errOAAI
errHajdel, M; Golyga, K; Siekacz, M; Feduniewicz-Zmuda, A; Skierbiszewski, C; Schwarz, UT; Muziol, G
err分享
err收藏
Hybrid Electroluminescence Device for On-Demand Single Photon Generation at Room Temperature室温下按需产生单光子的混合电致发光器件
errADVANCED OPTICAL MATERIALS
IF7.2
err2025-02-18
err0
errOAAI
errRodek, Aleksander; Hajdel, Mateusz; Oreszczuk, Kacper; Kafar, Anna; Aktas, Muhammed; Marona, Lucja; Potemski, Marek; Skierbiszewski, Czeslaw; Kossacki, Piotr
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err收藏
Lateral Carrier Diffusion in Ion-Implanted Ultra-Small Blue III-Nitride MicroLEDs离子注入超小尺寸蓝色III族氮化物微LED中的横向载流子扩散
errACS APPLIED MATERIALS & INTERFACES
IF8.2
err2025-01-15
err0
errOAAI
errSlawinska, J; Muziol, G; Kafar, A; Skierbiszewski, C
err分享
err收藏
Revealing the TMA2SnI4/GaN band alignment and carrier transfer across the interface
errJOURNAL OF MATERIALS CHEMISTRY C
IF5.1
err2024-01-01
err0
errOAAI
errZdanowicz, Ewelina; Przypis, Lukasz; Zuraw, Wiktor; Grodzicki, Milosz; Chlipala, Mikolaj; Skierbiszewski, Czeslaw; Herman, Artur P.; Kudrawiec, Robert
err分享
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Bidirectional light-emitting diode as a visible light source driven by alternating current双向发光二极管作为交流驱动的可见光源
errNATURE COMMUNICATIONS
IF15.7
err2023-11-20
err3
errOAAI
errZak, Mikolaj; Muziol, Grzegorz; Siekacz, Marcin; Bercha, Artem; Hajdel, Mateusz; Nowakowski-Szkudlarek, Krzesimir; Lachowski, Artur; Chlipala, Mikolaj; Wolny, Pawel; Turski, Henryk; Skierbiszewski, Czeslaw
err分享
err收藏
Nanostars in Highly Si-Doped GaN高Si掺杂GaN中的纳米星
errCRYSTAL GROWTH & DESIGN
IF3.4
err2023-06-11
err1
errOAAI
errSawicka, Marta; Turski, Henryk; Sobczak, Kamil; Feduniewicz-Zmuda, Anna; Fiuczek, Natalia; Golyga, Oliwia; Siekacz, Marcin; Muziol, Grzegorz; Nowak, Grzegorz; Smalc-Koziorowska, Julita; Skierbiszewski, Czeslaw
err分享
err收藏
Fabrication of GaN-air channels for embedded photonic structures用于嵌入式光子结构的GaN-空气通道的制备
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2023-03-01
err3
PREAI
errSawicka, Marta; Golyga, Oliwia; Fiuczek, Natalia; Muziol, Grzegorz; Feduniewicz- Zmuda, Anna; Siekacz, Marcin; Turski, Henryk; Czernecki, Robert; Grzanka, Ewa; Prozheev, Igor; Tuomisto, Filip; Skierbiszewski, Czeslaw
err分享
err收藏
Impact of Interfaces on Photoluminescence Efficiency of High-Indium-Content (In, Ga)N Quantum Wells界面对高铟含量 (In，Ga)N量子阱光致发光效率的影响
errPHYSICAL REVIEW APPLIED
IF4.4
err2023-01-17
err2
PREAI
errWolny, P.; Turski, H.; Muziol, G.; Sawicka, M.; Smalc-Koziorowska, J.; Moneta, J.; Hajdel, M.; Feduniewicz-Zmuda, A.; Grzanka, S.; Kudrawiec, R.; Skierbiszewski, C.
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Role of Metallic Adlayer in Limiting Ge Incorporation into GaN金属添加层在限制Ge掺入GaN中的作用
errMATERIALS
IF3.2
err2022-08-27
err3
errOAAI
errTurski, Henryk; Wolny, Pawel; Chlipala, Mikolaj; Sawicka, Marta; Reszka, Anna; Kempisty, Pawel; Konczewicz, Leszek; Muziol, Grzegorz; Siekacz, Marcin; Skierbiszewski, Czeslaw
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err收藏
Electrochemical etching of p-type GaN using a tunnel junction for efficient hole injection
errACTA MATERIALIA
IF9.3
err2022-08-01
err6
PREAI
errFiuczek, Natalia; Sawicka, Marta; Feduniewicz-Zmuda, Anna; Siekacz, Marcin; Zak, Mikolaj; Nowakowski-Szkudlarek, Krzesimir; Muziol, Grzegorz; Wolny, Pawel; Kelly, John J.; Skierbiszewski, Czeslaw
err分享
err收藏
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodes隧道结的离子注入作为定义III族氮化物基微型发光二极管孔径的方法
errOPTICS EXPRESS
IF3.3
err2022-07-12
err16
errOAAI
errSlawinska, J.; Muziol, G.; Siekacz, M.; Turski, H.; Hajdel, M.; Zak, M.; Feduniewicz-Zmuda, A.; Staszczak, G.; Skierbiszewski, C.
err分享
err收藏
Bottom tunnel junction-based blue LED with a thin Ge-doped current spreading layer具有薄Ge掺杂电流扩展层的基于底部隧道结的蓝色LED
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-04-25
err2
PREAI
errChlipala, Mikolaj; Turski, Henryk; Zak, Mikolaj; Muziol, Grzegorz; Siekacz, Marcin; Nowakowski-Szkudlarek, Krzesimir; Fiuczek, Natalia; Feduniewicz-Zmuda, Anna; Smalc-Koziorowska, Julita; Skierbiszewski, Czeslaw
err分享
err收藏
Electrically pumped blue laser diodes with nanoporous bottom cladding具有纳米多孔底部包层的电泵浦蓝色激光二极管
errOPTICS EXPRESS
IF3.3
err2022-03-15
err10
errOAAI
errSawicka, Marta; Muziol, Grzegorz; Fiuczek, Natalia; Hajdel, Mateusz; Siekacz, Marcin; Feduniewicz-Zmuda, Anna; Nowakowski-Szkudlarek, Krzesimir; Wolny, Pawel; Zak, Mikolaj; Turski, Henryk; Skierbiszewski, Czeslaw
err分享
err收藏
GaN-based bipolar cascade lasers with 25 nm wide quantum wells
errOPTICAL AND QUANTUM ELECTRONICS
IF4
err2022-01-03
err2
errOAAI
errPiprek, Joachim; Muziol, G.; Siekacz, M.; Skierbiszewski, C.
err分享
err收藏
Material Gain in Polar GaInN and AlGaN Quantum Wells: How to Overcome the 'Dead' Width for Light Emitters in These QW Systems?
errIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
IF5.1
err2022-01-01
err5
errOAAI
errGladysiewicz, Marta; Skierbiszewski, Czeslaw; Kudrawiec, Robert
err分享
err收藏
Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides
errNANOSCALE
IF5.1
err2022-01-01
err4
errOAAI
errOreszczuk, Kacper; Slawinska, Julia; Rodek, Aleksander; Potemski, Marek; Skierbiszewski, Czeslaw; Kossacki, Piotr
err分享
err收藏
Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDsInGaN量子阱厚度对led中光跃迁性质的依赖性
errMATERIALS
IF3.2
err2021-12-29
err21
errOAAI
errHajdel, Mateusz; Chlipala, Mikolaj; Siekacz, Marcin; Turski, Henryk; Wolny, Pawel; Nowakowski-Szkudlarek, Krzesimir; Feduniewicz-Zmuda, Anna; Skierbiszewski, Czeslaw; Muziol, Grzegorz
err分享
err收藏
Evolution of a dominant light emission mechanism induced by changes of the quantum well width in InGaN/GaN LEDs and LDs
errOPTICS EXPRESS
IF3.3
err2021-11-23
err8
errOAAI
errPieniak, Katarzyna; Trzeciakowski, Witold; Muziol, Grzegorz; Kafar, Anna; Siekacz, Marcin; Skierbiszewski, Czeslaw; Suski, Tadeusz
err分享
err收藏
Optical properties of N-polar GaN: The possible role of nitrogen vacancy-related defectsN极性GaN的光学性质: 氮空位相关缺陷的可能作用
errAPPLIED SURFACE SCIENCE
IF6.9
err2021-11-01
err13
PREAI
errTatarczak, Piotr; Turski, Henryk; Korona, Krzysztof P.; Grzanka, Ewa; Skierbiszewski, Czeslaw; Wysmolek, Andrzej
err分享
err收藏

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