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K

Kingsley Egbo

leibniz-institut im forschungsverbund berlin e.v

H指数:19

被引数:908

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Assessment of Trapping Phenomena in As-Grown and Thermally-Treated Si-Doped κ-Ga2O3 Layers via Optical Admittance Spectroscopy

通过光学导纳谱法对As-Grown和Thermally-Treated Si掺杂κ-Ga2O3层的俘获现象进行评估

Advanced Electronic Materials

IF5.3

2025-07-030

OAAI

Epitaxial (AlxGa1-x-yIny)2O3 alloys lattice matched to monoclinic Ga2O3 substrates ( vol 125, 172106, 2024)]

APPLIED PHYSICS LETTERS

IF3.6

2025-02-130

PRE

Kinetics, thermodynamics, and catalysis of the cation incorporation into GeO2, SnO2, and (SnxGe1-x)O2 during suboxide molecular beam epitaxy

IF4.5

2025-01-090

OA

From text to test: AI-generated control software for materials science instruments

从文本到测试: AI生成的材料科学仪器控制软件

DIGITAL DISCOVERY

IF5.6

2025-01-010

OA

Epitaxial (AlxGa1-x-yIny)2O3 alloys lattice matched to monoclinic Ga2O3 substrates

APPLIED PHYSICS LETTERS

IF3.6

2024-10-231

PRE

NiGa2O4 interfacial layers in NiO/Ga2O3 heterojunction diodes at high temperature

APPLIED PHYSICS LETTERS

IF3.6

2024-04-254

OA

Reliable operation of Cr2O3:Mg/ β-Ga2O3 p-n heterojunction diodes at 600 °C

APPLIED PHYSICS LETTERS

IF3.6

2024-04-106

OA

Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys

JOURNAL OF MATERIALS CHEMISTRY A

IF9.5

2024-01-013

OA

Quaternary CsPbX3 (X = Cl1-xBrx, Br1-xIx) alloy microplates synthesized by single-step chemical vapor deposition and their two-photon absorption (TPA) properties

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2024-01-011

PRE

Combinatorial synthesis and characterization of thin film Al1-xRExN (RE = Pr3+ and Tb3+) heterostructural alloys

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2024-01-010

OA

Defect Chemistry and Doping of Ultrawide Band Gap (III)BO3 Compounds

CHEMISTRY OF MATERIALS

IF7

2023-11-221

OA

Interfacial Properties of the SnO/κ-Ga2O3 p-n Heterojunction: A Case of Subsurface Doping Density Reduction via Thermal Treatment in κ-Ga2O3

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-09-213

OAAI

In situ study and modeling of the reaction kinetics during molecular beam epitaxy of GeO2 and its etching by Ge

IF4.5

2023-07-117

OA

Efficient Acceptor Doping of Sputter-Deposited p-Type Ni x Ga1-x O Rocksalt Alloy with Li

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2023-07-060

PRE

Acceptor and compensating donor doping of single crystalline SnO (001) films grown by molecular beam epitaxy and its perspectives for optoelectronics and gas-sensing

APPLIED PHYSICS LETTERS

IF3.6

2023-03-203

OA

Chemical vapor deposition growth and photodetector performance of lead-free all-inorganic crystalline Cs3Sb2X9 (X = I, Br) perovskite thin films

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2023-01-019

PRE

Wide gap p-type NiO-Ga2O3 alloy via electronic band engineering

JOURNAL OF ALLOYS AND COMPOUNDS

IF6.3

2023-01-0113

PRE

Enhancing the p-type conductivity of pure phase SnO via stoichiometry control and annealing

SURFACES AND INTERFACES

IF6.3

2022-12-014

PRE

Improving the p-Type Conductivity and Transparency of Pure Phase SnO by Ga and Na Doping

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2022-10-315

PRE

Optoelectronic properties and ultrafast carrier dynamics of copper iodide thin films

NATURE COMMUNICATIONS

IF15.7

2022-10-2621

OAAI