Shoji Ishibashi - Publications, H-index & Citations

Shoji Ishibashi

national institute of advanced industrial science and technology (aist) and core electronics technology research institute (cetri)

41H指数

370论文数

6.8K被引数

收录论文 68

发表时间

Candidate electro-optic molecular crystals for future optoelectronic integration 未来光电集成应用的候选电光分子晶体

mater. horiz.

IF0

2026-05-14

OAAI

Keishi Sunami; Sachio Horiuchi; Yoriko Sonoda; Naomi Fujiki; Toshiki Higashino; Yuki Atsumi; Shoji Ishibashi; Jun’ya Tsutsumi

Vacancy-Type Defects in n-Type GaN Fabricated by Low-Dose Ion Implantation Studied by a Monoenergetic Positron Beam 通过单能正电子束研究低剂量离子注入法制备的n型GaN中的空位型缺陷

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS

IF1.8

2025-09-01

OAAI

Uedono, Akira; Iguchi, Hiroko; Horita, Masahiro; Suda, Jun; Shima, Kohei; Chichibu, Shigefusa F.; Ishibashi, Shoji

Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2025-03-01

PREAI

Chichibu, S. F.; Kikuchi, K.; Moody, B.; Mita, S.; Collazo, R.; Sitar, Z.; Kumagai, Y.; Ishibashi, S.; Uedono, A.; Shima, K.

Bias-dependent surface stress by density functional theory combined with the effective screening medium method 密度泛函理论结合有效筛选介质方法的偏置相关表面应力

PHYSICAL REVIEW B

IF3.7

2024-10-04

PREAI

Hagiwara, Satoshi; Ishibashi, Shoji; Otani, Minoru

Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2024-07-10

PREAI

Uedono, Akira; Fleischmann, Claudia; Soulie, Jean-Philippe; Ayyad, Mustafa; Scheerder, Jeroen E.; Adelmann, Christoph; Uzuhashi, Jun; Ohkubo, Tadakatsu; Michishio, Koji; Oshima, Nagayasu; Ishibashi, Shoji

Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method

APPLIED PHYSICS LETTERS

IF3.6

2024-04-29

PREAI

Shima, K.; Kurimoto, K.; Bao, Q.; Mikawa, Y.; Saito, M.; Tomida, D.; Uedono, A.; Ishibashi, S.; Ishiguro, T.; Chichibu, S. F.

Computational findings of metastable ferroelectric phases of squaric acid (vol 97, 184102, 2018)

PHYSICAL REVIEW B

IF3.7

2023-08-29

OAAI

Ishibashi, Shoji; Horiuchi, Sachio; Kumai, Reiji

A straightforward method using the sign of the piezoelectric coefficient to identify the ferroelectric switching mechanism

SCIENTIFIC REPORTS

IF3.9

2023-05-31

OAAI

Ishibashi, Shoji; Kumai, Reiji; Horiuchi, Sachio

Competition of polar and antipolar states hidden behind a variety of polarization switching modes in hydrogen-bonded molecular chains

MATERIALS HORIZONS

IF10.7

2023-01-01

OAAI

Horiuchi, Sachio; Minemawari, Hiromi; Ishibashi, Shoji

Effect of solid-solution strengthening on deformation mechanisms and strain hardening in medium-entropy V1-xCrxCoNi alloys 固溶强化对中熵V1-xCrxCoNi合金变形机制和应变硬化的影响

JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY

IF14.3

2022-05-01

OAAI

Chung, Hyun; Kim, Dae Woong; Cho, Woo Jin; Han, Heung Nam; Ikeda, Yuji; Ishibashi, Shoji; Kormann, Fritz; Sohn, Seok Su

Resonant tunneling driven metal-insulator transition in double quantum-well structures of strongly correlated oxide 强相关氧化物的双量子阱结构中的共振隧穿驱动的金属-绝缘体跃迁

NATURE COMMUNICATIONS

IF15.7

2021-12-03

OAAI

Yukawa, R.; Kobayashi, M.; Kanda, T.; Shiga, D.; Yoshimatsu, K.; Ishibashi, S.; Minohara, M.; Kitamura, M.; Horiba, K.; Santander-Syro, A. F.; Kumigashira, H.

Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg

APPLIED PHYSICS LETTERS

IF3.6

2021-11-03

PREAI

Shima, K.; Tanaka, R.; Takashima, S.; Ueno, K.; Edo, M.; Kojima, K.; Uedono, A.; Ishibashi, S.; Chichibu, S. F.

Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam

SCIENTIFIC REPORTS

IF3.9

2021-10-19

OAAI

Uedono, Akira; Tanaka, Ryo; Takashima, Shinya; Ueno, Katsunori; Edo, Masaharu; Shima, Kohei; Kojima, Kazunobu; Chichibu, Shigefusa F.; Ishibashi, Shoji

Hydrogen-bonded single-component organic ferroelectrics revisited by van der Waals density-functional theory calculations

PHYSICAL REVIEW MATERIALS

IF3.4

2021-09-22

OAAI

Ishibashi, Shoji; Horiuchi, Sachio; Kumai, Reiji

Single-Component Molecular Conductors-Multi-Orbital Correlated π-d Electron Systems 单组分分子导体-多轨道关联 π-d电子系统

BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN

IF3.8

2021-09-11

PREAI

Kobayashi, Akiko; Zhou, Biao; Takagi, Rina; Miyagawa, Kazuya; Ishibashi, Shoji; Kobayashi, Akito; Kawamura, Taiki; Nishibori, Eiji; Kanoda, Kazushi

Reduced nonradiative recombination rates in c-plane Al0.83In0.17N films grown on a nearly lattice-matched GaN substrate by metalorganic vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2021-08-31

PREAI

Li, L. Y.; Shima, K.; Yamanaka, M.; Kojima, K.; Egawa, T.; Uedono, A.; Ishibashi, S.; Takeuchi, T.; Miyoshi, M.; Chichibu, S. F.

A fully automated approach to calculate the melting temperature of elemental crystals

COMPUTATIONAL MATERIALS SCIENCE

IF3.3

2021-02-01

OAAI

Zhu, Li-Fang; Janssen, Jan; Ishibashi, Shoji; Koermann, Fritz; Grabowski, Blazej; Neugebauer, Joerg

Large polarization and record-high performance of energy storage induced by a phase change in organic molecular crystals

CHEMICAL SCIENCE

IF7.4

2021-01-01

OAAI

Horiuchi, Sachio; Ishibashi, Shoji

Single-component organic molecular ferroelectrics based on disk- or wheel-like rotation

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-01

PREAI

Horiuchi, Sachio; Kumai, Reiji; Ishibashi, Shoji

Effects of ultra-high-pressure annealing on characteristics of vacancies in Mg-implanted GaN studied using a monoenergetic positron beam

SCIENTIFIC REPORTS

IF3.9

2020-10-15

OAAI

Uedono, Akira; Sakurai, Hideki; Narita, Tetsuo; Sierakowski, Kacper; Bockowski, Michal; Suda, Jun; Ishibashi, Shoji; Chichibu, Shigefusa F.; Kachi, Tetsu

研究方向