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J

J.‐F. Carlin

swiss federal institutes of technology domain

43H指数
252论文数
8.1K被引数
收录论文 83
发表时间
VN-VIn divacancies as the origin of non-radiative recombination centers in InGaN quantum wells
err2025-03-01
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errToschi, Anna; Chen, Yao; Carlin, Jean-Francois; Butte, Raphael; Grandjean, Nicolas
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Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs
err2024-08-29
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errOAAI
errRoccato, Nicola; Piva, Francesco; Buffolo, Matteo; Santi, Carlo De; Trivellin, Nicola; Haller, Camille; Carlin, Jean-Francois; Grandjean, Nicolas; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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GaN Surface Passivation by MoS2 Coating
err2024-08-12
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errOAAI
errChen, Danxuan; Jiang, Jin; Weatherley, Thomas F. K.; Carlin, Jean-Francois; Banerjee, Mitali; Grandjean, Nicolas
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Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
err2023-12-29
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errOAAI
errElhajhasan, Mahmoud; Seemann, Wilken; Dudde, Katharina; Vaske, Daniel; Callsen, Gordon; Rousseau, Ian; Weatherley, Thomas F. K.; Carlin, Jean-Francois; Butte, Raphael; Grandjean, Nicolas; Protik, Nakib H.; Romano, Giuseppe
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Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
err2023-09-16
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errOAAI
errLottigier, Pierre; Di Paola, Davide Maria; Alexander, Duncan T. L.; Weatherley, Thomas F. K.; Modrono, Pablo Saenz de Santa Maria; Chen, Danxuan; Jacopin, Gwenole; Carlin, Jean-Francois; Butte, Raphael; Grandjean, Nicolas
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Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
err2023-02-02
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errOAAI
errDelphan, Anthonin; Makhonin, Maxim N.; Isoniemi, Tommi; Walker, Paul M.; Skolnick, Maurice S.; Krizhanovskii, Dmitry N.; Skryabin, Dmitry V.; Carlin, Jean-Francois; Grandjean, Nicolas; Butte, Raphael
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Effects of quantum-well indium content on deep defects and reliability of InGaN/GaN light-emitting diodes with under layer
err2021-09-28
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PREAI
errRoccato, Nicola; Piva, Francesco; De Santi, Carlo; Buffolo, Matteo; Haller, Camille; Carlin, Jean-Francois; Grandjean, Nicolas; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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Modeling the electrical characteristics of InGaN/GaN LED structures based on experimentally-measured defect characteristics
err2021-08-04
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PREAI
errRoccato, Nicola; Piva, Francesco; De Santi, Carlo; Brescancin, Riccardo; Mukherjee, Kalparupa; Buffolo, Matteo; Haller, Camille; Carlin, Jean-Francois; Grandjean, Nicolas; Vallone, Marco; Tibaldi, Alberto; Bertazzi, Francesco; Goano, Michele; Verzellesi, Giovanni; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
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GaN buffer growth temperature and efficiency of InGaN/GaN quantum wells: The critical role of nitrogen vacancies at the GaN surface
err2021-03-15
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errOAAI
errChen, Yao; Haller, Camille; Liu, Wei; Karpov, Sergey Yu; Carlin, Jean-Francois; Grandjean, Nicolas
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Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces
err2020-12-21
err5
PREAI
errWang, Y.; Schnedler, M.; Lan, Q.; Zheng, F.; Freter, L.; Lu, Y.; Breuer, U.; Eisele, H.; Carlin, J-F; Butte, R.; Grandjean, N.; Dunin-Borkowski, R. E.; Ebert, Ph
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Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
err2020-12-01
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errOAAI
errPolyakov, A. Y.; Haller, C.; Butte, R.; Smirnov, N. B.; Alexanyan, L. A.; Kochkova, A. I.; Shikoh, S. A.; Shchemerov, I. V.; Chernykh, A. V.; Lagov, P. B.; Pavlov, Yu S.; Carlin, J. -F.; Mosca, M.; Grandjean, N.; Pearton, S. J.
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Defect incorporation in In-containing layers and quantum wells: experimental analysis via deep level profiling and optical spectroscopy
err2020-10-20
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errOAAI
errPiva, F.; De Santi, C.; Caria, A.; Haller, C.; Carlin, J. F.; Mosca, M.; Meneghesso, G.; Zanoni, E.; Grandjean, N.; Meneghini, M.
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Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides
err2020-10-19
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errOAAI
errCiers, J.; Solnyshkov, D. D.; Callsen, G.; Kuang, Y.; Carlin, J-F; Malpuech, G.; Butte, R.; Grandjean, N.
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Doubly resonant second-harmonic generation of a vortex beam from a bound state in the continuum
errOPTICA
IF8.5
err2020-09-03
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errOAAI
errWang, Jun; Clementi, Marco; Minkov, Momchil; Barone, Andrea; Carlin, Jean-Francois; Grandjean, Nicolas; Gerace, Dario; Fan, Shanhui; Galli, Matteo; Houdre, Romuald
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Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
err2020-08-11
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errOAAI
errPolyakov, A. Y.; Haller, C.; Butte, R.; Smirnov, N. B.; Alexanyan, L. A.; Shikoh, A. S.; Shchemerov, I., V; Chernykh, S., V; Lagov, P. B.; Pavlov, Yu S.; Kochkova, A., I; Carlin, J. F.; Mosca, M.; Grandjean, N.; Pearton, S. J.
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Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
err2020-06-04
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errOAAI
errLiu, W.; Haller, C.; Chen, Y.; Weatherley, T.; Carlin, J. -F.; Jacopin, G.; Butte, R.; Grandjean, N.
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GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
err2018-09-14
err105
errOAAI
errHaller, C.; Carlin, J. -F.; Jacopin, G.; Liu, W.; Martin, D.; Butte, R.; Grandjean, N.
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A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities
err2018-02-08
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errOAAI
errJagsch, Stefan T.; Trivino, Noelia Vico; Lohof, Frederik; Callsen, Gordon; Kalinowski, Stefan; Rousseau, Ian M.; Barzel, Roy; Carlin, Jean-Francois; Jahnke, Frank; Butte, Raphael; Gies, Christopher; Hoffmann, Axel; Grandjean, Nicolas; Reitzenstein, Stephan
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Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
err2018-01-17
err34
errOAAI
errButte, Raphael; Lahourcade, Lise; Uzdavinys, Tomas Kristijonas; Callsen, Gordon; Mensi, Mounir; Glauser, Marlene; Rossbach, Georg; Martin, Denis; Carlin, Jean-Francois; Marcinkevicius, Saulius; Grandjean, Nicolas
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