GaN Surface Passivation by MoS2 Coating

Danxuan Chen

doi:10.1021/acs.nanolett.4c02259

2024-08-12

Danxuan Chen *

Jin Jiang

Thomas F. K. Weatherley

J.‐F. Carlin

Mitali Banerjee

N. Grandjean

DOI：10.1021/acs.nanolett.4c02259

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摘要

En 中文

In this study, we investigate the impact of two-dimensional MoS2 coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS2 coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS2, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QWs and suppresses spatially localized intrinsic surface states. This finding provides novel pathways for efficient III-nitride surface passivation.

Keyword:

surface passivation

mixed-dimensional van der Waalsheterostructures

III-nitride semiconductors

two-dimensionaltransition metal dichalcogenides

cathodoluminescence

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期刊

Nano Letters

IF:

9.1

论文数:

2.7W

被引数:

16.5W

机构

Ecole Polytechnique Federale de Lausanne

学者数:

1.7W

论文数: 1.3W

被引数: 25

swiss federal institutes of technology domain

学者数:

9.0W

论文数: 8.0W

被引数: 163

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