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M

Massimo V. Fischetti

the university of texas at dallas

59H指数
324论文数
1.5W被引数
收录论文 40
发表时间
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Bilayer TMDs for Future FETs: Carrier Dynamics and Device Implications双层TMDs用于未来FETs：载流子动力学与器件影响
errNanomaterials
IF4.3
err2026-03-03
err0
errOAAI
errShoaib Mansoori; Edward Chen; Massimo Fischetti
err分享
err收藏
Effects of phonon confinement on electron transport in Si nanowire and armchair-edge graphene nanoribbon transistors: A dissipative quantum-transport study声子限制效应对Si纳米线及扶手椅边石墨烯纳米带晶体管中电子输运的影响：一项耗散量子输运研究
errJOURNAL OF APPLIED PHYSICS
IF2.5
err2025-09-07
err0
errOAAI
errCai, Bimin; Van de Put, Maarten L.; Fischetti, Massimo V.
err分享
err收藏
Role of electrostatic doping on the resistance of metal and two-dimensional materials edge contacts
errPHYSICAL REVIEW RESEARCH
IF4.2
err2024-09-10
err0
errOAAI
errBrahma, Madhuchhanda; Van de Put, Maarten L.; Chen, Edward; Fischetti, Massimo, V; Vandenberghe, William G.
err分享
err收藏
Thermalization of radiation-induced electrons in wide-bandgap materials: A first-principles approach
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-12-19
err4
errOAAI
errNielsen, Dallin O.; Fischetti, Massimo V.
err分享
err收藏
First-principles approach to closing the 10-100 eV gap for charge-carrier thermalization in semiconductors
errPHYSICAL REVIEW B
IF3.7
err2023-10-19
err2
errOAAI
errNielsen, Dallin O.; Van de Walle, Chris G.; Pantelides, Sokrates T.; Schrimpf, Ronald D.; Fleetwood, Daniel M.; Fischetti, Massimo, V
err分享
err收藏
The importance of the image forces and dielectric environment in modeling contacts to two-dimensional materials图像力和介电环境在与二维材料接触的建模中的重要性
errNPJ 2D MATERIALS AND APPLICATIONS
IF8.8
err2023-03-10
err8
errOAAI
errBrahma, Madhuchhanda; Van de Put, Maarten L. L.; Chen, Edward; Fischetti, Massimo V. V.; Vandenberghe, William G. G.
err分享
err收藏
Theoretical Study of Electronic Transport in Two-Dimensional Transition Metal Dichalcogenides: Effects of the Dielectric Environment
errPHYSICAL REVIEW APPLIED
IF4.4
err2022-11-18
err19
errOAAI
errGopalan, Sanjay; Van de Put, Maarten L.; Gaddemane, Gautam; Fischetti, Massimo, V
err分享
err收藏
The foundations of Shockley's equation for the average electron-hole-pair creation energy in semiconductors
errAPPLIED PHYSICS LETTERS
IF3.6
err2022-07-25
err2
errOAAI
errPantelides, Sokrates T.; Walker, D. Greg; Reaz, Mahmud; Fischetti, Massimo V.; Schrimpf, Ronald D.
err分享
err收藏
Master-Equation Study of Quantum Transport in Realistic Semiconductor Devices Including Electron-Phonon and Surface-Roughness Scattering包括电子声子和表面粗糙度散射在内的现实半导体器件中量子输运的主方程研究
errPHYSICAL REVIEW APPLIED
IF4.4
err2020-01-31
err23
PREAI
errVyas, Pratik B.; Van de Put, Maarten L.; Fischetti, Massimo V.
err分享
err收藏
Monte Carlo Study of Electronic Transport in Monolayer InSe
errMATERIALS
IF3.2
err2019-12-14
err17
errOAAI
errGopalan, Sanjay; Gaddemane, Gautam; Van de Put, Maarten L.; Fischetti, Massimo V.
err分享
err收藏
Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials
errCOMPUTER PHYSICS COMMUNICATIONS
IF3.4
err2019-11-01
err25
errOAAI
errVan de Put, Maarten L.; Fischetti, Massimo, V; Vandenberghe, William G.
err分享
err收藏
Electron pairing by remote-phonon scattering in oxide-supported graphene
errPHYSICAL REVIEW B
IF3.7
err2019-09-13
err0
errOAAI
errShin, Donghan; Fischetti, Massimo, V; Demkov, Alexander A.
err分享
err收藏
Electronic Transport Properties of Silicane Determined from First Principles
errMATERIALS
IF3.2
err2019-09-11
err18
errOAAI
errKhatami, Mohammad Mandi; Gaddemane, Gautam; Van de Put, Maarten L.; Fischetti, Massimo, V; Moravvej-Farshi, Mohammad Kazem; Pourfath, Mandi; Vandenberghe, William G.
err分享
err收藏
Hot electrons in Si lose energy mostly to optical phonons: Truth or myth?
errAPPLIED PHYSICS LETTERS
IF3.6
err2019-06-05
err20
PREAI
errFischetti, M. V.; Yoder, P. D.; Khatami, M. M.; Gaddemane, G.; Van de Put, M. L.
err分享
err收藏
Electron Transport Properties of AlxGa1-xN/GaN Transistors Based on First-Principles Calculations and Boltzmann-Equation Monte Carlo Simulations
errPHYSICAL REVIEW APPLIED
IF4.4
err2019-04-15
err27
errOAAI
errFang, Jingtian; Fischetti, Massimo, V; Schrimpf, Ronald D.; Reed, Robert A.; Bellotti, Enrico; Pantelides, Sokrates T.
err分享
err收藏
Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview
errPHYSICAL REVIEW B
IF3.7
err2018-09-07
err85
errOAAI
errGaddemane, Gautam; Vandenberghe, William G.; Van de Put, Maarten L.; Chen, Shanmeng; Tiwari, Sabyasachi; Chen, Edward; Fischetti, Massimo, V
err分享
err收藏
Superconductivity induced by flexural modes in non-σh-symmetric Dirac-liketwo-dimensional materials: A theoretical study for silicene and germanene
errPHYSICAL REVIEW B
IF3.7
err2018-04-12
err2
errOAAI
errFischetti, Massimo V.; Polley, Arup
err分享
err收藏
Imperfect two-dimensional topological insulator field-effect transistors
errNATURE COMMUNICATIONS
IF15.7
err2017-01-20
err93
errOAAI
errVandenberghe, William G.; Fischetti, Massimo V.
err分享
err收藏
Microscopic dielectric permittivities of graphene nanoribbons and graphene
errPHYSICAL REVIEW B
IF3.7
err2016-07-28
err50
PREAI
errFang, Jingtian; Vandenberghe, William G.; Fischetti, Massimo V.
err分享
err收藏
Mermin-Wagner theorem, flexural modes, and degraded carrier mobility in two-dimensional crystals with broken horizontal mirror symmetry
errPHYSICAL REVIEW B
IF3.7
err2016-04-11
err88
errOAAI
errFischetti, Massimo V.; Vandenberghe, William G.
err分享
err收藏

研究方向

暂无研究方向
合作学者
合作期刊
C
Chris G. Van de Walle
H 指数: 123 · 论文数: 771
S
Sokrates T. Pantelides
H 指数: 106 · 论文数: 987
Y
Yves J. Chabal
H 指数: 101 · 论文数: 631
R
Robert M. Wallace
H 指数: 91 · 论文数: 621
D
Daniel M. Fleetwood
H 指数: 85 · 论文数: 766
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