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J

Jay Mathews

University of North Carolina

H指数:22

被引数:2,037

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Hyperdoping SiGe with S using ion implantation and pulsed laser melting for infrared absorption and detection

通过离子注入和脉冲激光熔化对SiGe进行S超掺杂以实现红外吸收与检测

Journal of Applied Physics

IF2.5

2026-01-071

PRE

Editorial: SiGeSn Infrared Photonics and Quantum Electronics

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2025-01-010

PRE

Carrier lifetimes in gold-hyperdoped silicon-Influence of dopant incorporation methods and concentration profiles

IF4.5

2022-11-084

OA

Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density

IF3.2

2022-01-2715

OAAI

Dynamically tunable single-layer VO2/metasurface based THz cross-polarization converter

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-03-1725

PRE

Ion beam synthesis and photoluminescence study of supersaturated fully-relaxed Ge-Sn alloys

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS

IF4.6

2020-12-018

OAAI

Eigenmode hybridization enables lattice-induced transparency in symmetric terahertz metasurfaces for slow light applications

IF3.3

2019-05-2219

OA

Towards a direct band gap group IV Ge-based material

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-03-017

PREAI

Electromagnetically induced transparency control in terahertz metasurfaces based on bright-bright mode coupling

PHYSICAL REVIEW B

IF3.7

2018-04-04193

OAAI

Hyperdoping of Si by ion implantation and pulsed laser melting

通过离子注入和脉冲激光熔化对Si进行超掺杂

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-05-0139

PREAI

All-optical switching via four-wave mixing Bragg scattering in a silicon platform

IF5.3

2017-01-1025

OAAI

Incorporation of gold into silicon by thin film deposition and pulsed laser melting

APPLIED PHYSICS LETTERS

IF3.6

2016-12-0720

PREAI

Low control-power wavelength conversion on a silicon chip

IF3.3

2016-08-0112

PREAI

A Liquid Ion Chamber for Clinical Stereotactic Output Measurements

INTERNATIONAL JOURNAL OF RADIATION ONCOLOGY BIOLOGY PHYSICS

IF6.5

2014-09-010

PREAI

On the limits to Ti incorporation into Si using pulsed laser melting

APPLIED PHYSICS LETTERS

IF3.6

2014-03-1724

OAAI

Room-temperature sub-band gap optoelectronic response of hyperdoped silicon

NATURE COMMUNICATIONS

IF15.7

2014-01-02219

OA

Direct versus indirect optical recombination in Ge films grown on Si substrates

PHYSICAL REVIEW B

IF3.7

2011-11-1170

OAAI

Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

APPLIED PHYSICS LETTERS

IF3.6

2011-10-2740

PREAI

Synthesis and Materials Properties of Sn/P-Doped Ge on Si(100): Photoluminescence and Prototype Devices

Si(100) 上Sn/P掺杂Ge的合成与材料性能: 光致发光和原型器件

CHEMISTRY OF MATERIALS

IF7

2011-09-2120

PREAI

Direct gap electroluminescence from Si/Ge1-ySny p-i-n heterostructure diodes

APPLIED PHYSICS LETTERS

IF3.6

2011-02-11105

PREAI