J. Menéndez - Publications, H-index & Citations

J. Menéndez

Arizona State University

52H指数

352论文数

9.7K被引数

收录论文 98

发表时间

Sn-Segregation Behavior and Its Suppression in Ge1–ySny Semiconductor Alloys with y > 0.20 Sn偏聚行为及其在y > 0.20的Ge1–ySny半导体合金中的抑制

Crystal Growth & Design

IF0

2026-04-20

PREAI

Dhruve A. Ringwala; Manuel A. Roldan; Nuwanjula S. Samarasingha; Stefan Zollner; José Menéndez; John Kouvetakis

Heavy Ga Doping of Ge and Ge1-x Si x Semiconductors by CVD Using GaH3N(CH3)3 采用GaH3N(CH3)3通过CVD对Ge和Ge1-xSix半导体进行重镓掺杂

ACS Applied Materials and Interfaces

IF8.2

2025-11-01

PREAI

Ringwala, Dhruve A.; Mircovich, Matthew A.; Boone, David N.; Roldan, Manuel A.; Kouvetakis, John; Menendez, Jose

A practical theoretical model for Ge-like epitaxial diodes. II. Matching the experimental optical responsivity in pin devices Ge-like外延二极管的实用理论模型。II. 匹配pin器件中的实验光响应度

JOURNAL OF APPLIED PHYSICS

IF2.5

2025-03-04

OAAI

Mircovich, Matthew A.; Kouvetakis, John; Menendez, Jose

Editorial: SiGeSn Infrared Photonics and Quantum Electronics

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2025-01-01

PREAI

Liu, Jifeng; Claflin, Bruce; Du, Wei; Mathews, Jay; Menendez, Jose

Unified theory of optical absorption and luminescence including both direct and phonon-assisted processes

PHYSICAL REVIEW B

IF3.7

2024-05-08

PREAI

Tiwari, Sabyasachi; Kioupakis, Emmanouil; Menendez, Jose; Giustino, Feliciano

Simplified Designs of Ge1-ySny/Si(100) Diodes for Facile Integration With Si Technologies: Synthesis, Electrical Performance and Modeling Studies

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2024-01-01

PREAI

Ringwala, Dhruve A.; Mircovich, Matthew A.; Roldan, Manuel A.; Kouvetakis, John; Menendez, Jose

Synthesis of High Sn Content Ge1-x-ySixSny (0.1 < y < 0.22) Semiconductors on Si for MWIR Direct Band Gap Applications

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2023-10-06

PREAI

Kouvetakis, John; Wallace, Patrick M.; Xu, Chi; Ringwala, Dhruve A.; Mircovich, Matthew; Roldan, Manuel A.; Webster, Preston T.; Grant, Perry C.; Menendez, Jose

Consistent optical and electrical determination of carrier concentrations for the accurate modeling of the transport properties of n-type Ge

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-09-01

OAAI

Menendez, Jose; Xu, Chi; Kouvetakis, John

Ultra-low temperature synthesis of Ge-based optical materials and devices on Si using GeH3Cl

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2022-01-01

PREAI

Zhang, Aixin; Mircovich, Matthew A.; Ringwala, Dhruve A.; Poweleit, Christian D.; Roldan, Manuel A.; Menendez, Jose; Kouvetakis, John

Extended Compositional Range for the Synthesis of SWIR and LWIR Ge1-ySny Alloys and Device Structures via CVD of SnH4 and Ge3H8

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2021-08-10

PREAI

Mircovich, Matthew A.; Xu, Chi; Ringwala, Dhruve A.; Poweleit, Christian D.; Menendez, Jose; Kouvetakis, John

Temperature-dependent photoluminescence in Ge: Experiment and theory

PHYSICAL REVIEW B

IF3.7

2020-05-27

OAAI

Menendez, Jose; Poweleit, Christian D.; Tilton, Sean E.

Synthesis and Fundamental Studies of Si-Compatible (Si)GeSn and GeSn Mid-IR Systems with Ultrahigh Sn Contents

CHEMISTRY OF MATERIALS

IF7

2019-11-07

PREAI

Xu, Chi; Ringwala, Dhruve; Wang, Duo; Liu, Lei; Poweleit, Christian D.; Chang, Shery L. Y.; Zhuang, Houlong L.; Menendez, Jose; Kouvetakis, John

Mid-infrared (3-8μm) Ge1-ySny alloys (0.15

APPLIED PHYSICS LETTERS

IF3.6

2019-05-30

OAAI

Xu, Chi; Wallace, Patrick M.; Ringwala, Dhruve A.; Chang, Shery L. Y.; Poweleit, Christian D.; Kouvetakis, John; Menendez, Jose

The direct bandgap of gray α-tin investigated by infrared ellipsometry

APPLIED PHYSICS LETTERS

IF3.6

2018-12-06

PREAI

Carrasco, Rigo A.; Zamarripa, Cesy M.; Zollner, Stefan; Menendez, Jose; Chastang, Stephanie A.; Duan, Jinsong; Grzybowski, Gordon J.; Claflin, Bruce B.; Kiefer, Arnold M.

Phonon-assisted optical absorption in germanium

PHYSICAL REVIEW B

IF3.7

2018-10-31

OAAI

Menendez, Jose; Lockwood, David J.; Zwinkels, Joanne C.; Noel, Mario

Fabrication of Ge:Ga Hyperdoped Materials and Devices Using CMOS-Compatible Ga and Ge Hydride Chemistries

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2018-10-09

PREAI

Xu, Chi; Wallace, Patrick M.; Ringwala, Dhruve A.; Menendez, Jose; Kouvetakis, John

Temperature dependence of the interband critical points of bulk Ge and strained Ge on Si

APPLIED SURFACE SCIENCE

IF6.9

2017-11-01

OAAI

Fernando, Nalina S.; Nunley, T. Nathan; Ghosh, Ayana; Nelson, Cayla M.; Cooke, Jacqueline A.; Medina, Amber A.; Zollner, Stefan; Xu, Chi; Menendez, Jose; Kouvetakis, John

Synthesis and Structural and Optical Properties of Ga(As1-xPx)Ge3 and (GaP)yGe5-2y Semiconductors Using Interface-Engineered Group IV Platforms

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2017-09-26

PREAI

Wallace, Patrick M.; Sims, Patrick E.; Xu, Chi; Poweleit, Christian D.; Kouvetakis, John; Menendez, Jose

Synthesis and optical properties of (GaAs)yGe5-2y alloys assembled from molecular building blocks

APPLIED PHYSICS LETTERS

IF3.6

2017-09-19

PREAI

Sims, P. E.; Wallace, P. M.; Xu, Chi; Poweleit, C. D.; Claflin, B.; Kouvetakis, J.; Menendez, J.