Iván Santos - Publications, H-index & Citations

Iván Santos

Universidad de Valladolid

16H指数

91论文数

651被引数

收录论文 20

发表时间

Atomistic study of dislocation formation during Ge epitaxy on Si Ge外延在Si上生长过程中位错形成的原子层次研究

Applied Surface Science

IF6.9

2025-09-12

OAAI

Luis Martín-Encinar; Luis A. Marqués; Iván Santos; Lourdes Pelaz

Microscopic origin of the acceptor removal in neutron-irradiated Si detectors-An atomistic simulation study

ACTA MATERIALIA

IF9.3

2022-12-01

OAAI

Lopez, P.; Aboy, M.; Santos, I; Marques, L. A.; Ullan, M.; Pelaz, L.

Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit 通过微波退火对磷掺杂的纳米片硅的溶解度极限以上进行高效稳定的活化

APPLIED PHYSICS LETTERS

IF3.6

2022-08-03

OAAI

Tsai, Chun-Hsiung; Savant, Chandrashekhar P.; Asadi, Mohammad Javad; Lin, Yu-Ming; Santos, Ivan; Hsu, Yu-Hsiang; Kowalski, Jeffrey; Pelaz, Lourdes; Woon, Wei-Yen; Lee, Chih-Kung; Hwang, James C. M.

Achieving junction stability in heavily doped epitaxial Si:P

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2021-06-01

OAAI

Tsai, C. H.; Hsu, Y. H.; Santos, I.; Pelaz, L.; Kowalski, J. E.; Liou, J. W.; Woon, W. Y.; Lee, C. K.

Investigation of CdTe, GaAs, Se and Si as Sensor Materials for Mammography

IEEE TRANSACTIONS ON MEDICAL IMAGING

IF9.8

2020-12-01

OAAI

Procz, Simon; Roque, Gerardo; Avila, Carlos; Racedo, Jorge; Rueda, Roberto; Santos, Ivan; Fiederle, Michael

{001) loops in silicon unraveled

ACTA MATERIALIA

IF9.3

2019-03-01

OAAI

Marques, Luis A.; Aboy, Maria; Ruiz, Manuel; Santos, Ivan; Lopez, Pedro; Pelaz, Lourdes

Generation of amorphous Si structurally compatible with experimental samples through the quenching process: A systematic molecular dynamics simulation study

JOURNAL OF NON-CRYSTALLINE SOLIDS

IF3.5

2019-01-01

OAAI

Santos, Ivan; Aboy, Maria; Marques, Luis A.; Lopez, Pedro; Pelaz, Lourdes

Improved physical models for advanced silicon device processing

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2017-05-01

OAAI

Pelaz, Lourdes; Marques, Luis A.; Aboy, Maria; Lopez, Pedro; Santos, Ivan

Molecular dynamics simulation of the early stages of self-interstitial clustering in silicon

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2016-02-01

OAAI

Marques, Luis A.; Aboy, Maria; Ruiz, Manuel; Santos, Ivan; Lopez, Pedro; Pelaz, Lourdes

Satisfaction of business customers with mobile phone and internet services in Spain

TELECOMMUNICATIONS POLICY

IF6.4

2016-02-01

PREAI

Suarez, David; Garcia-Marinoso, Begoria; Santos, Ivan

Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations 从头计算对c-si中X和W光致发光线的原子起源的见解

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-01-14

OAAI

Santos, Ivan; Aboy, Maria; Lopez, Pedro; Marques, Luis A.; Pelaz, Lourdes

Elucidating the atomistic mechanisms driving self-diffusion of amorphous Si during annealing

PHYSICAL REVIEW B

IF3.7

2011-04-14

OAAI

Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes; Colombo, Luciano

Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency

PHYSICAL REVIEW B

IF3.7

2010-01-19

OAAI

Santos, I.; Castrillo, P.; Windl, W.; Drabold, D. A.; Pelaz, L.; Marques, L. A.

Structural transformations from point to extended defects in silicon: A molecular dynamics study

PHYSICAL REVIEW B

IF3.7

2008-11-11

PREAI

Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Lopez, Pedro; Aboy, Maria

Recrystallization of atomically balanced amorphous pockets in Si:: A source of point defects

PHYSICAL REVIEW B

IF3.7

2007-10-24

PREAI

Marques, Luis A.; Pelaz, Lourdes; Lopez, Pedro; Santos, Ivan; Aboy, Maria

Characterization of octadecaborane implantation into Si using molecular dynamics

PHYSICAL REVIEW B

IF3.7

2006-11-22

PREAI

Marques, Luis A.; Pelaz, Lourdes; Santos, Ivan; Venezia, V. C.

Modeling of damage generation mechanisms in silicon at energies below the displacement threshold

PHYSICAL REVIEW B

IF3.7

2006-11-21

PREAI

Santos, Ivan; Marques, Luis A.; Pelaz, Lourdes

Eutectic composition of a chiral mixture containing a racemic compound

ORGANIC PROCESS RESEARCH & DEVELOPMENT

IF3.5

2005-07-28

PREAI

Wang, YL; LoBrutto, R; Wenslow, RW; Santos, I

GAS-PHASE BASICITIES OF CUBANE, DODECAHEDRANE, AND METHYLDODECAHEDRANE AND 1,16-DIMETHYLDODECAHEDRANE AS MEASURED BY FOURIER-TRANSFORM ION-CYCLOTRON RESONANCE MASS-SPECTROMETRY

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY

IF15.6

2002-05-01

PREAI

SANTOS, I; BALOGH, DW; DOECKE, CW; MARSHALL, AG; PAQUETTE, LA

Preparation and characterization of polymorphs for an LTD(4) antagonist, RG 12525

JOURNAL OF PHARMACEUTICAL SCIENCES

IF3.8

1996-05-01

PREAI

Carlton, RA; Difeo, TJ; Powner, TH; Santos, I; Thompson, MD

研究方向