Zhenhua Zhang - Publications, H-index & Citations

Zhenhua Zhang

机构信息待补充

24H指数

96论文数

1.6K被引数

收录论文 33

发表时间

Unconventional Type-V band alignment and noticeable Rashba effects in heterojunctions constructed by WSeTe and In2S3 monolayers 非常规Type-V能带对齐和显著的Rashba效应存在于由WSeTe和In2S3单层材料构成的超晶格中

Applied Surface Science

IF6.9

2025-08-22

PREAI

Changsong Zhao; Zhanhai Li; Zhenhua Zhang; Xiaoqing Deng

Geometrical stability, electrical contact and optical properties for ZrX2(X = Cl, Br, I) /Zr2Cl2 semiconductor-metal heterojunctions

APPLIED SURFACE SCIENCE

IF6.9

2025-02-01

PREAI

Yi, Yu; Li, Zhanhai; Cao, Shengguo; Han, Jianing; Zhang, Zhenhua

Geometrical stability, electrical properties, and device applications of various MoSi2N4 derivatives and their heterojunctions

PHYSICAL REVIEW APPLIED

IF4.4

2025-01-21

PREAI

Li, Zhanhai; Han, Jianing; Cao, Shengguo; Zhang, Zhenhua; Deng, Xiaoqing

Stable WSeTe/PtTe2 van der Waals heterojunction: Excellent mechanical, electronic, and optical properties and device applications 稳定的WSeTe/PtTe2范德华异质结: 优异的机械、电子和光学特性以及器件应用

APPLIED SURFACE SCIENCE

IF6.9

2024-11-01

PREAI

Zhao, Changsong; Li, Zhanhai; Zhang, Zhenhua

CrI 3 /Arsenene vdW heterstructure: Outstanding physical properties and substantially enhanced magnetic stability

APPLIED SURFACE SCIENCE

IF6.9

2024-10-01

PREAI

Han, Jianing; Ding, Zixuan; Li, Zhanhai; Cao, Shengguo; Zhang, Zhenhua; Deng, Xiaoqing

First-principles study of metal-semiconductor contacts and quantum transport simulations for 5.1-nm monolayer MoSi 2 N 4 devices 5.1纳米单层MoSi 2 N 4器件金属-半导体接触和量子输运模拟的第一性原理研究

PHYSICAL REVIEW APPLIED

IF4.4

2024-05-30

PREAI

Li, Zhanhai; Han, Jianing; Cao, Shengguo; Zhang, Zhenhua; Deng, Xiaoqing

Stable Ohmic contacts achieved in hydrogenated graphene/C3B van der Waals heterojunctions 在氢化石墨烯/C3B范德华异质结中实现稳定的欧姆接触

SURFACES AND INTERFACES

IF6.3

2024-03-01

PREAI

Shengguo, Cao; Zhanhai, Li; Jianing, Han; Zhenhua, Zhang

Electrical contact property and control effects for stable T(H)-TaS2/C3B metal-semiconductor heterojunctions

PHYSICAL CHEMISTRY CHEMICAL PHYSICS

IF2.9

2024-01-01

PREAI

Cao, Shengguo; Li, Zhanhai; Han, Jianing; Zhang, Zhenhua

Physical properties of monolayer Mn(BiTeS)2 and its applications in sub-3 nm spintronic devices 单层Mn(BiTeS)2的物理性质及其在亚3 nm自旋电子器件中的应用

PHYSICAL REVIEW B

IF3.7

2023-11-16

PREAI

Li, Zhanhai; Han, Jianing; Cao, Shengguo; Zhang, Zhenhua; Deng, Xiaoqing

Two-dimensional g-GeC/PtSe2 van der Waals heterostructure: a visible light-driven direct Z-scheme photocatalyst for overall water splitting

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-06-12

PREAI

Xu, Y. H.; Han, J. N.; Li, Z. H.; Zhang, Z. H.

Achieving real Ohmic contact by the dual protection of outer layer atoms and surface functionalization in 2D metal Mxenes/MoSi2N4 heterostructures

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2023-01-01

PREAI

He, X.; Li, W. Z.; Gao, Z.; Zhang, Z. H.; He, Y.

Stacking and tuning effects on magneto-electronic and electric contact features for arsenene/Fe3GeTe2 van der Waals heterostructure

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2022-12-23

PREAI

Han, J. N.; Cao, S. G.; Li, Z. H.; Zhang, Z. H.

Gate-controlled reversible rectifying behavior investigated in a two-dimensional MoS2 diode

PHYSICAL REVIEW B

IF3.7

2021-07-13

147

PREAI

Liu, Qian; Li, Jia-Jin; Wu, Dan; Deng, Xiao-Qing; Zhang, Zhen-Hua; Fan, Zhi-Qiang; Chen, Ke-Qiu

Edge chemistry and tensile strain effects on the magnetic properties of 1D VSe2 structures

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2021-01-01

PREAI

Chen, H. L.; Zhang, L.; Deng, X. Q.; Sun, L.; Zhang, Z. H.; Fan, Z. Q.

Structural stability, magneto-electronic properties, and tuning effects for transition metal-doped net-Y nanoribbons

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-09-04

PREAI

Hu, J. K.; Fan, Z. Q.; Zhang, Z. H.; Zhang, H.

High-performance 5.1 nm in-plane Janus WSeTe Schottky barrier field effect transistors

NANOSCALE

IF5.1

2020-01-01

PREAI

Fan, Zhi-Qiang; Zhang, Zhen-Hua; Yang, Shen-Yuan

Electronic structure, strain effects and transport property of armchair graphene nanoribbon with variously possible edge oxidation

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2019-09-09

PREAI

Zhao, T.; Fan, Z. Q.; Zhang, Z. H.; Zhou, R. L.

O-Vacancy-line defective Ti2CO2 nanoribbons: novel magnetism, tunable carrier mobility, and magnetic device behaviors

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2019-01-01

PREAI

Hu, R.; Li, Y. H.; Zhang, Z. H.; Fan, Z. Q.; Sun, L.

Magnetic structure and magnetic transport characteristics of nanostructures based on armchair-edged graphene nanoribbons

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2015-01-01

PREAI

Zhu, Z.; Zhang, Z. H.; Wang, D.; Deng, X. Q.; Fan, Z. Q.; Tang, G. P.

Edge contact dependent spin transport for n-type doping zigzag-graphene with asymmetric edge hydrogenation

SCIENTIFIC REPORTS

IF3.9

2014-02-10

OAAI

Deng, Xiaoqing; Zhang, Zhenhua; Tang, Guiping; Fan, Zhiqiang; Zhu, Huali; Yang, Changhu

研究方向