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Programmable Retention Characteristics in MoS2-Based Atomristors for Neuromorphic and Reservoir Computing Systems 用于神经形态和储层计算系统的MoS2-Based原子电阻器中的可编程保留特性 Lee, Yoonseok; Huang, Yifu; Chang, Yao-Feng; Yang, Sung Jin; Ignacio, Nicholas D.; Kutagulla, Shanmukh; Mohan, Sivasakthya; Kim, Sunghun; Lee, Jungwoo; Akinwande, Deji; Kim, Sungjun 分享 收藏
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Synaptic plasticity and non-volatile memory characteristics in TiN-nanocrystal-embedded 3D vertical memristor-based synapses for neuromorphic systems (vol 15, pg 13239, 2023) Yang, Seyeong; Kim, Taegyun; Kim, Sunghun; Chung, Daewon; Kim, Tae-Hyeon; Lee, Jung Kyu; Kim, Sungjoon; Ismail, Muhammad; Mahata, Chandreswar; Kim, Sungjun; Cho, Seongjae 分享 收藏
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Effect of Post-Annealing on Barrier Modulations in Pd/IGZO/SiO2/p+-Si Memristors 后退火对Pd/IGZO/SiO2/p-si忆阻器势垒调制的影响 Kim, Donguk; Lee, Hee Jun; Yang, Tae Jun; Choi, Woo Sik; Kim, Changwook; Choi, Sung-Jin; Bae, Jong-Ho; Kim, Dong Myong; Kim, Sungjun; Kim, Dae Hwan 分享 收藏
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