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C
Chandreswar Mahata
dongguk university
38
H指数
119
论文数
4.2K
被引数
0
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80
发表时间
发表时间
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被引数
Molybdenum Nano-Island Embedded Optoelectronic RRAM With Enhanced Linear Synaptic Plasticity for Neuromorphic Visual Perception
钼纳米岛嵌入式光电阻变存储器,具有增强的线性突触可塑性,用于神经形态视觉感知
Laser & Photonics Reviews
IF
10
2026-07-28
0
PRE
AI
Chandreswar Mahata; Chanmin Park; Kyeongjun Min; Muhammad Ismail; Janghyuk Moon; Hyungjin Kim; Sungjun Kim
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Neuromorphic sensing and computing in a versatile thermally grown Fe–W–O–S nanocomposite memristor
神经形态传感与计算在一种多功能的Fe–W–O–S纳米复合忆阻器中
materials science and engineering: r: reports
IF
0
2026-03-16
0
PRE
AI
Muhammad Ismail; Junhyuk Park; Maria Rasheed; Chandreswar Mahata; Hyun-Seok Kim; Heung Soo Kim; Janghyuk Moon; Sungjun Kim
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Dual-state conversion for high-entropy and reconfigurable resistive memory-based physically unclonable functions
高熵及可重构电阻式存储器物理不可克隆函数的双态转换
Journal of Materials Science & Technology
IF
14.3
2025-11-27
0
PRE
AI
Seoyoung Park; Hyesung Na; Jaewoo Choi; Muhammad Ismail; Chandreswar Mahata; Donghyun Ryu; Sungjoon Kim; Jung-Kyu Lee; Junsu Yu; Sungjun Kim
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Hybrid WS2-Based Memristor With Tunable Conductance Modulation for Neuromorphic and Nociceptive Learning
混合WS2基忆阻器,具有可调电导调制功能,适用于神经形态和痛觉学习。
Small
IF
12.1
2025-10-03
0
PRE
AI
Muhammad Ismail; Hyesung Na; Youngseo Lee; Maria Rasheed; Chandreswar Mahata; Jung-Kyu Lee; Sungjun Kim
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TiN/TiOx/BaTiO3/Pt heterostructure memristors for adaptive neuromorphic systems
TiN/TiOx/BaTiO3/Pt 异质结构忆阻器用于自适应神经形态系统
Chemical Engineering Journal
IF
13.2
2025-07-21
0
PRE
AI
Muhammad Ismail; Hyesung Na; Maria Rasheed; Chandreswar Mahata; Hyun-Seok Kim; Heung Soo Kim; Janghyuk Moon; Sungjun Kim
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Optically Tunable Synaptic Plasticity and Memory Emulation in Au-Nanoparticle Enhanced HfTiOx/Al2O3-Based Photonic Memristors
光学可调突触可塑性与记忆模拟在Au纳米粒子增强的HfTiOx/Al2O3基光子忆阻器中
Advanced Functional Materials
IF
19
2025-07-21
0
PRE
AI
Chandreswar Mahata; Muhammad Ismail; Hyungjin Kim; Sungjun Kim
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Synaptic metaplasticity and associative learning in low-power neuromorphic computing using W-diffused BaTiO₃ memristors
使用W扩散BaTiO₃忆阻器的低功耗神经形态计算中的突触可塑性可塑性及关联学习
Nano Energy
IF
17.1
2025-06-24
0
PRE
AI
Muhammad Ismail; Hyesung Na; Maria Rasheed; Chandreswar Mahata; Yoon Kim; Sungjun Kim
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Exploitation of temporal dynamics and synaptic plasticity in multilayered ITO/ZnO/IGZO/ZnO/ITO memristor for energy-efficient reservoir computing
利用多层ITO/ZnO/IGZO/ZnO/ITO忆阻器的时序动力学和突触可塑性实现高效能量存储计算
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
IF
14.3
2025-02-01
0
PRE
AI
Ismail, Muhammad; Lee, Seungjun; Rasheed, Maria; Mahata, Chandreswar
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Dynamic FeOx/FeWOx nanocomposite memristor for neuromorphic and reservoir computing
NANOSCALE
IF
5.1
2025-01-01
1
PRE
AI
Ismail, Muhammad; Rasheed, Maria; Park, Yongjin; Lee, Jungwoo; Mahata, Chandreswar; Kim, Sungjun
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Metaplasticity and Reservoir Computing in Bio-Realistic Artificial Synapses with Embedded Localized Au-Nanoparticle-Based Memristors
具有嵌入的基于局部Au纳米颗粒的忆阻器的生物现实人工突触中的可塑性和储层计算
ADVANCED FUNCTIONAL MATERIALS
IF
19
2024-12-18
0
PRE
AI
Mahata, Chandreswar; Kim, Gimun; So, Hyojin; Ismail, Muhammad; Hsu, Chih-Chieh; Kim, Sungjoon; Kim, Sungjun
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Reservoir computing and advanced synaptic plasticity of sputter-deposited ZnO memristors with controllable threshold and nonvolatile switching behavior
具有可控阈值和非易失性开关行为的溅射沉积ZnO忆阻器的储层计算和高级突触可塑性
JOURNAL OF CHEMICAL PHYSICS
IF
3.1
2024-12-09
0
PRE
AI
Ismail, Muhammad; Seo, Euncho; Rasheed, Maria; Park, Yongjin; Mahata, Chandreswar; Kim, Sungjun
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Engineering of TiN/ZnO/SnO2/ZnO/Pt multilayer memristor with advanced electronic synapses and analog switching for neuromorphic computing
具有高级电子突触和模拟开关的TiN/ZnO/SnO2/ZnO/Pt多层忆阻器的工程设计,用于神经形态计算
JOURNAL OF ALLOYS AND COMPOUNDS
IF
6.3
2024-10-01
1
PRE
AI
Ismail, Muhammad; Kim, Sunghun; Rasheed, Maria; Mahata, Chandreswar; Kang, Myounggon; Kim, Sungjun
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Nitrogen doping effect on InGaZnO-based artificial synapse for implementing reservoir computing and SVHN dataset pattern recognition
氮掺杂对基于InGaZnO的人工突触实现储层计算和SVHN数据集模式识别的影响
NANO ENERGY
IF
17.1
2024-10-01
3
PRE
AI
Mahata, Chandreswar; So, Hyojin; Ju, Dongyeol; Ismail, Muhammad; Kim, Sungjoon; Hsu, Chih-Chieh; Park, Kyungchul; Kim, Sungjun
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Enhanced analog switching and neuromorphic performance of ZnO-based memristors with indium tin oxide electrodes for high-accuracy pattern recognition
JOURNAL OF CHEMICAL PHYSICS
IF
3.1
2024-10-01
0
PRE
AI
Ismail, Muhammad; Rasheed, Maria; Park, Yongjin; Lee, Sohyeon; Mahata, Chandreswar; Shim, Wonbo; Kim, Sungjun
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Exploration of Analog Synaptic Plasticity and Convolutional Neural Network Simulation in Bilayer TiO x N y /SnO x Memristor for Neuromorphic Systems
神经形态系统双层TiO x N y /SnO x忆阻器中模拟突触可塑性和卷积神经网络模拟的探索
ACS MATERIALS LETTERS
IF
8.7
2024-07-09
2
PRE
AI
Ismail, Muhammad; Kim, Doohyung; Lim, Eunjin; Rasheed, Maria; Mahata, Chandreswar; Seo, Yeongkyo; Kim, Sungjun
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Effect of Solution Annealing Temperature on Liquation Cracking Susceptibility of Alloy 617M
METALS AND MATERIALS INTERNATIONAL
IF
4
2024-02-24
1
PRE
AI
Divya, M.; Mahata, C.; Pradeep, K. G.; Das, C. R.; Vasudevan, M.
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Artificial synapses based on 2D-layered palladium diselenide heterostructure dynamic memristor for neuromorphic applications
NANO ENERGY
IF
17.1
2024-02-01
17
PRE
AI
Mahata, Chandreswar; Ju, Dongyeol; Das, Tanmoy; Jeon, Beomki; Ismail, Muhammad; Kim, Sangwan; Kim, Sungjun
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Synaptic Properties and Short-Term Memory Dynamics of TiO2/WOx Heterojunction Memristor for Reservoir Computing
用于储层计算的TiO2/WOx异质结忆阻器的突触特性和短期记忆动力学
ADVANCED MATERIALS TECHNOLOGIES
IF
6.2
2024-01-07
20
PRE
AI
So, Hyojin; Lee, Jungwoo; Mahata, Chandreswar; Kim, Sangwan; Kim, Sungjun
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Analog Memory and Synaptic Plasticity in an InGaZnO-Based Memristor by Modifying Intrinsic Oxygen Vacancies
MATERIALS
IF
3.2
2023-12-05
2
OA
AI
Mahata, Chandreswar; So, Hyojin; Kim, Soomin; Kim, Sungjun; Cho, Seongjae
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Uniform multilevel switching and synaptic properties in RF-sputtered InGaZnO-based memristor treated with oxygen plasma
JOURNAL OF CHEMICAL PHYSICS
IF
3.1
2023-11-14
9
PRE
AI
Mahata, Chandreswar; So, Hyojin; Yang, Seyeong; Ismail, Muhammad; Kim, Sungjun; Cho, Seongjae
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研究方向
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