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J

Jen-Inn Chyi

National Central University

H指数:25

被引数:2,892

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Fabrication of InAs 2D submonolayer nanostructure-based solar cells with InGaAs/GaAsSb double-well structure

具有InGaAs/GaAsSb双阱结构的InAs 2D亚单层纳米结构太阳能电池的制备

OPTICAL MATERIALS

IF4.2

2025-02-010

PRE

Pinch-off driven near-ideal output characteristics of n-Ga2O3/p-GaN light effect transistor for UV photonics

APPLIED PHYSICS LETTERS

IF3.6

2024-07-110

PRE

An experimental study of the energy band alignments of B(Al, Ga)N heterojunctions

APPLIED PHYSICS LETTERS

IF3.6

2023-07-053

OA

Epitaxial Growth of GaN/AlN on h-BN/Si(111) by Metal-Organic Chemical Vapor Deposition: An Interface Analysis

ACS APPLIED ELECTRONIC MATERIALS

IF4.7

2023-01-034

PRE

Performance Comparison of Lattice-Matched AlInN/GaN/AlGaN/GaN Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Planar Channel and Multiple-Mesa-Fin-Channel Array

IF3.2

2021-12-223

OAAI

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

IF3.2

2021-09-224

OAAI

Improved optical properties of InAs submonolayer quantum dots in GaAsSb/InGaAs double-well structure

APPLIED PHYSICS LETTERS

IF3.6

2019-08-274

PREAI

Achieving high electron mobility in AlInGaN/GaN heterostructures: The correlation between thermodynamic stability and electron transport properties

APPLIED PHYSICS LETTERS

IF3.6

2019-06-049

PREAI

Design and Demonstration of Tunable Amplified Sensitivity of AIGaN/GaN High Electron Mobility Transistor (HEMT)-Based Biosensors in Human Serum

ANALYTICAL CHEMISTRY

IF6.7

2019-04-1736

PREAI

Direct detection of DNA using electrical double layer gated high electron mobility transistor in high ionic strength solution with high sensitivity and specificity

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2018-10-0123

PREAI

High-field modulated ion-selective field-effect-transistor (FET) sensors with sensitivity higher than the ideal Nernst sensitivity

SCIENTIFIC REPORTS

IF3.9

2018-05-2942

OAAI

Enumeration of circulating tumor cells and investigation of cellular responses using aptamer-immobilized AlGaN/GaN high electron mobility transistor sensor array

SENSORS AND ACTUATORS B-CHEMICAL

IF7.7

2018-03-0129

PREAI

High sensitivity cardiac troponin I detection in physiological environment using AlGaN/GaN High Electron Mobility Transistor (HEMT) Biosensors

BIOSENSORS & BIOELECTRONICS

IF10.5

2018-02-01187

PREAI

Dynamic monitoring of transmembrane potential changes: a study of ion channels using an electrical double layer-gated FET biosensor

IF5.4

2018-01-0120

PREAI

Direct detection of fibrinogen in human plasma using electric-double-layer gated AlGaN/GaN high electron mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2017-08-2515

PREAI

Beyond the Debye length in high ionic strength solution: direct protein detection with field-effect transistors (FETs) in human serum

SCIENTIFIC REPORTS

IF3.9

2017-07-12213

OAAI

High Thermal Stability of GaN Schottky Diode with Diamond-Like Carbon (DLC) Anode Design

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2015-12-113

PREAI

A Study on the Fiber Dispersion Effect for the Generation of Quasi-Sinusoidal Terahertz Modulations on Optical Pulses

JOURNAL OF LIGHTWAVE TECHNOLOGY

IF4.8

2015-12-010

PRE

The Characterization of InAlN/AlN/GaN HEMTs Using Silicon-on-Insulator (SOI) Substrate Technology

JOURNAL OF THE ELECTROCHEMICAL SOCIETY

IF3.3

2015-11-284

PREAI

Bottom-Up Nano-heteroepitaxy of Wafer-Scale Semipolar GaN on (001) Si

(001) Si上晶圆级半极性GaN的自下而上纳米异质外延

ADVANCED MATERIALS

IF26.8

2015-07-159

PREAI