Observation of Mott instability at the valence transition of f-electron systemNATIONAL SCIENCE REVIEWIF17.12023-02-283OAAI
Approaching a Minimal Topological Electronic Structure in Antiferromagnetic Topological Insulator MnBi2Te4 via Surface Modification通过表面修饰在反铁磁拓扑绝缘体MnBi2Te4中接近最小拓扑电子结构NANO LETTERSIF9.12022-05-2321OA
Electronic origin of the enhanced thermoelectric efficiency of Cu2SeSCIENCE BULLETINIF21.12020-11-0113OAAI
个人简介
教育背景
工作经历
荣誉奖项
未登录.png){kind=icon}
未登录个人简介教育背景工作经历荣誉奖项