Masataka Higashiwaki - Publications, H-index & Citations

Masataka Higashiwaki

tamura corporation

65H指数

286论文数

1.9W被引数

收录论文 40

发表时间

Plasma-assisted molecular beam epitaxy growth of high-density nitrogen-doped Ga2O3 thin films on Ga2O3 (010) substrates by simultaneously supplying oxygen and nitrogen radicals 通过同时供应氧和氮自由基，在Ga2O3 (010)衬底上采用等离子体辅助分子束外延方法生长高氮掺杂的Ga2O3薄膜

APL MATERIALS

IF4.5

2025-05-12

OAAI

Nakaoka, Kura; Taniguchi, Shoki; Uehara, Tomoki; Inajima, Jin; Tsujimoto, Kohki; Teramura, Yusuke; Honda, Satoko; Shim, Yonggu; Higashiwaki, Masataka

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-08-08

OAAI

Fregolent, Manuel; Piva, Francesco; Buffolo, Matteo; De Santi, Carlo; Cester, Andrea; Higashiwaki, Masataka; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo

Effect of substrate orientation on homoepitaxial growth of β-Ga2O3 by halide vapor phase epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2022-03-10

PREAI

Goto, Ken; Murakami, Hisashi; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka; Kumagai, Yoshinao

A trapping tolerant drain current based temperature measurement of β-Ga2O3 MOSFETs

APPLIED PHYSICS LETTERS

IF3.6

2022-02-14

OAAI

Zheng, Xiang; Moule, Taylor; Pomeroy, James W.; Higashiwaki, Masataka; Kuball, Martin

β-Gallium oxide power electronics Β-氧化镓电力电子

APL MATERIALS

IF4.5

2022-02-07

322

OAAI

Green, Andrew J.; Speck, James; Xing, Grace; Moens, Peter; Allerstam, Fredrik; Gumaelius, Krister; Neyer, Thomas; Arias-Purdue, Andrea; Mehrotra, Vivek; Kuramata, Akito; Sasaki, Kohei; Watanabe, Shinya; Koshi, Kimiyoshi; Blevins, John; Bierwagen, Oliver; Krishnamoorthy, Sriram; Leedy, Kevin; Arehart, Aaron R.; Neal, Adam T.; Mou, Shin; Ringel, Steven A.; Kumar, Avinash; Sharma, Ankit; Ghosh, Krishnendu; Singisetti, Uttam; Li, Wenshen; Chabak, Kelson; Liddy, Kyle; Islam, Ahmad; Rajan, Siddharth; Graham, Samuel; Choi, Sukwon; Cheng, Zhe; Higashiwaki, Masataka

Selective observation of transverse optical phonons of Au modes to evaluate free charge carrier parameters in β-Ga2O3 substrate and homoepitaxial film

APPLIED PHYSICS LETTERS

IF3.6

2021-06-21

PREAI

Onuma, Takeyoshi; Sasaki, Kohei; Yamaguchi, Tomohiro; Honda, Tohru; Kuramata, Akito; Yamakoshi, Shigenobu; Higashiwaki, Masataka

Ultrawide bandgap semiconductors

APPLIED PHYSICS LETTERS

IF3.6

2021-05-17

OAAI

Higashiwaki, Masataka; Kaplar, Robert; Pernot, Julien; Zhao, Hongping

Aperture-limited conduction and its possible mechanism in ion-implanted current aperture vertical β-Ga2O3 MOSFETs

APPLIED PHYSICS LETTERS

IF3.6

2021-01-05

PREAI

Wong, Man Hoi; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka

Carrier capture kinetics, deep levels, and isolation properties of β-Ga2O3 Schottky-barrier diodes damaged by nitrogen implantation

APPLIED PHYSICS LETTERS

IF3.6

2020-12-29

PREAI

De Santi, C.; Fregolent, M.; Buffolo, M.; Wong, M. H.; Higashiwaki, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.

Delay-time analysis in radio-frequency β-Ga2O3 field effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2020-12-21

PREAI

Kamimura, Takafumi; Nakata, Yoshiaki; Higashiwaki, Masataka

Characterization of trap states in buried nitrogen-implanted β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2020-12-18

PREAI

Mishra, Abhishek; Moule, Taylor; Uren, Michael J.; Wong, Man Hoi; Goto, Ken; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka; Kuball, Martin

Reduction in leakage current through interface between Ga2O3 epitaxial layer and substrate by ion implantation doping of compensating impurities

APPLIED PHYSICS LETTERS

IF3.6

2020-11-11

PREAI

Kumar, Sandeep; Kamimura, Takafumi; Lin, Chia-Hung; Nakata, Yoshiaki; Higashiwaki, Masataka

Electroreflectance study on optical anisotropy in β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2019-12-02

PREAI

Onuma, T.; Tanaka, K.; Sasaki, K.; Yamaguchi, T.; Honda, T.; Kuramata, A.; Yamakoshi, S.; Higashiwaki, M.

Wide bandgap oxides

APL MATERIALS

IF4.5

2019-02-25

OAAI

Leedy, Kevin D.; Char, Kookrin; Higashiwaki, Masataka; Peterson, Rebecca L.; Speck, James S.

Single-crystal-Ga2O3/polycrystalline-SiC bonded substrate with low thermal and electrical resistances at the heterointerface

APPLIED PHYSICS LETTERS

IF3.6

2019-01-23

PREAI

Lin, Chia-Hung; Hatta, Naoki; Konishi, Keita; Watanabe, Shinya; Kuramata, Akito; Yagi, Kuniaki; Higashiwaki, Masataka

Acceptor doping of β-Ga2O3 by Mg and N ion implantations

APPLIED PHYSICS LETTERS

IF3.6

2018-09-05

145

PREAI

Wong, Man Hoi; Lin, Chia-Hung; Kuramata, Akito; Yamakoshi, Shigenobu; Murakami, Hisashi; Kumagai, Yoshinao; Higashiwaki, Masataka

Optical signatures of deep level defects in Ga2O3 Ga2O3中深能级缺陷的光学特征

APPLIED PHYSICS LETTERS

IF3.6

2018-06-11

138

OAAI

Gao, Hantian; Muralidharan, Shreyas; Pronin, Nicholas; Karim, Md Rezaul; White, Susan M.; Asel, Thaddeus; Foster, Geoffrey; Krishnamoorthy, Sriram; Rajan, Siddharth; Cao, Lei R.; Higashiwaki, Masataka; Von Wenckstern, Holger; Grundmann, Marius; Zhao, Hongping; Look, David C.; Brillson, Leonard J.

Guest Editorial: The dawn of gallium oxide microelectronics

APPLIED PHYSICS LETTERS

IF3.6

2018-02-06

556

OAAI

Higashiwaki, Masataka; Jessen, Gregg H.

Radiation hardness of β-Ga2O3 metal-oxide-semiconductor field-effect transistors against gamma-ray irradiation

APPLIED PHYSICS LETTERS

IF3.6

2018-01-10

PREAI