Aniruddha Konar - Publications, H-index & Citations

Aniruddha Konar

Intel Corporation

15H指数

57论文数

4.6K被引数

收录论文 20

发表时间

Characterization Methods of TMD Transistor Gate Dielectrics Targeting 1 nm EOT for 2-D CMOS Scaling 面向2-D CMOS缩放的TMD晶体管栅介质（目标EOT为1 nm）的表征方法

IEEE Transactions on Electron Devices

IF3.2

2025-08-01

PREAI

Chelsey Dorow; Aniruddha Konar; Ande Kitamura; Ashish Penumatcha; Sudarat Lee; Adedapo Oni; Chi-Yin Cheng; Nazmul Arefin; Kevin O'Brien; Scott B. Clendenning; David Kencke; Uygar Avci

Surface roughness mediated specularity parameter of thin Cu films

APPLIED PHYSICS LETTERS

IF3.6

2021-03-31

PREAI

Konar, Aniruddha; Shin, Keun Wook; Byun, Kyung-Eun; Shinde, Prashant P.; Adiga, Shashishekar P.; Mayya, K. Subramanya; Cho, Yeonchoo; Shin, Hyeon-Jin; Park, Seongjun

Electrical resistivity of atomically smooth single-crystal Cu films

PHYSICAL REVIEW B

IF3.7

2020-10-02

PREAI

Shinde, Prashant P.; Tagade, Piyush; Adiga, Shashishekar P.; Konar, Aniruddha; Pandian, Shanthi; Mayya, K. Subramanya; Shin, Hyeon-Jin; Cho, Yeonchoo; Park, Seongjun

Improved statistical variability and delay performance with junctionless inserted oxide FinFET

AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS

IF3.2

2020-02-01

PREAI

Jegadheesan, V; Sivasankaran, K.; Konar, Aniruddha

Impact of geometrical parameters and substrate on analog/RF performance of stacked nanosheet field effect transistor

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2019-04-01

PREAI

Jegadheesan, V; Sivasankaran, K.; Konar, Aniruddha

Superconducting properties of NbTiN thin films deposited by high-temperature chemical vapor deposition

PHYSICAL REVIEW B

IF3.7

2018-04-30

OAAI

Hazra, D.; Tsavdaris, N.; Mukhtarova, A.; Jacquemin, M.; Blanchet, F.; Albert, R.; Jebari, S.; Grimm, A.; Konar, A.; Blanquet, E.; Mercier, F.; Chapelier, C.; Hofheinz, M.

How thin barrier metal can be used to prevent Co diffusion in the modern integrated circuits?

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2017-10-20

PREAI

Dixit, Hemant; Konar, Aniruddha; Pandey, Rajan; Ethirajan, Tamilmani

Carrier Transport in High Mobility In As Nanowire Junction less Transistors

NANO LETTERS

IF9.1

2015-02-09

OAAI

Konar, Aniruddha; Mathew, John; Nayak, Kaushik; Bajaj, Mohit; Pandey, Rajan K.; Dhara, Sajal; Murali, K. V. R. M.; Deshmukh, Mandar M.

Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2012-12-21

PREAI

Ganguly, Satyaki; Konar, Aniruddha; Hu, Zongyang; Xing, Huili; Jena, Debdeep

High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals 基于多层MoS2晶体的高迁移率和低功耗薄膜晶体管

NATURE COMMUNICATIONS

IF15.7

2012-08-21

1.6K

OAAI

Kim, Sunkook; Konar, Aniruddha; Hwang, Wan-Sik; Lee, Jong Hak; Lee, Jiyoul; Yang, Jaehyun; Jung, Changhoon; Kim, Hyoungsub; Yoo, Ji-Beom; Choi, Jae-Young; Jin, Yong Wan; Lee, Sang Yoon; Jena, Debdeep; Choi, Woong; Kim, Kinam

High-Detectivity Multilayer MoS2 Phototransistors with Spectral Response from Ultraviolet to Infrared 具有从紫外到红外光谱响应的高检测灵敏度多层MoS2光电晶体管

ADVANCED MATERIALS

IF26.8

2012-08-20

1.1K

PREAI

Choi, Woong; Cho, Mi Yeon; Konar, Aniruddha; Lee, Jong Hak; Cha, Gi-Beom; Hong, Soon Cheol; Kim, Sangsig; Kim, Jeongyong; Jena, Debdeep; Joo, Jinsoo; Kim, Sunkook

Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior

APPLIED PHYSICS LETTERS

IF3.6

2012-07-03

274

OAAI

Hwang, Wan Sik; Remskar, Maja; Yan, Rusen; Protasenko, Vladimir; Tahy, Kristof; Chae, Soo Doo; Zhao, Pei; Konar, Aniruddha; Xing, Huili (Grace); Seabaugh, Alan; Jena, Debdeep

High-field transport in two-dimensional graphene

PHYSICAL REVIEW B

IF3.7

2011-09-30

114

PREAI

Fang, Tian; Konar, Aniruddha; Xing, Huili; Jena, Debdeep

Dielectric-environment mediated renormalization of many-body effects in a one-dimensional electron gas

PHYSICAL REVIEW B

IF3.7

2011-08-24

OAAI