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Fumihiko Maeda

fukuoka institute of technology

H指数:22

被引数:2,393

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Very Gradual and Anomalous Oxidation at the Interface of Hydrogen-Intercalated Graphene/4H-SiC(0001)

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2017-11-201

PREAI

Structural Instability of Transferred Graphene Grown by Chemical Vapor Deposition against Heating

JOURNAL OF PHYSICAL CHEMISTRY C

IF3.2

2013-10-0925

PREAI

Core-level photoelectron spectroscopy study of interface structure of hydrogen-intercalated graphene on n-type 4H-SiC(0001)

PHYSICAL REVIEW B

IF3.7

2013-08-1911

PREAI

Molecular beam epitaxial growth of graphene and ridge-structure networks of graphene

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2011-10-1413

PREAI

Dependence of electronic properties of epitaxial few-layer graphene on the number of layers investigated by photoelectron emission microscopy

PHYSICAL REVIEW B

IF3.7

2009-03-30261

PREAI

Two-dimensional emission patterns of secondary electrons from graphene layers formed on SiC(0001)

APPLIED SURFACE SCIENCE

IF6.9

2008-09-0119

PREAI

Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons

PHYSICAL REVIEW B

IF3.7

2008-02-15336

OAAI

Time-resolved core-level photoelectron spectroscopy and reflection high-energy electron diffraction study of surface phase transition on GaAs(001)

APPLIED SURFACE SCIENCE

IF6.9

2004-10-011

PREAI

Electronic structure of single-walled carbon nanotubes encapsulating potassium

PHYSICAL REVIEW B

IF3.7

2003-03-3170

PREAI

Effect of strain on the chemical bonds in InAs nanocrystals self-organized on GaAs and Se-terminated GaAs surfaces

APPLIED SURFACE SCIENCE

IF6.9

2000-08-011

PREAI

Real-time analysis of alternating growth on GaAs(001) by core-level photoelectron spectroscopy

通过核心级光电子能谱实时分析GaAs(001) 上的交替生长

APPLIED SURFACE SCIENCE

IF6.9

2000-08-011

PREAI

In-induced surface reconstruction on GaSb(001)

PHYSICAL REVIEW B

IF3.7

2000-07-1511

PREAI

Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

APPLIED PHYSICS LETTERS

IF3.6

2000-04-17296

PREAI

Sb-induced reconstruction on Sb-terminated GaAs(001)

PHYSICAL REVIEW B

IF3.7

1999-10-1510

PREAI

Anomalous downward band bending induced by selenium passivation of MBE-grown InAs(001) surfaces

MBE生长的InAs(001) 表面的硒钝化引起的异常向下能带弯曲

APPLIED SURFACE SCIENCE

IF6.9

1997-06-0125

PREAI

Relaxation of band bending on GaAs(001) surface by controlling the crystal defects near the surface

通过控制表面附近的晶体缺陷来松弛GaAs(001) 表面上的能带弯曲

APPLIED SURFACE SCIENCE

IF6.9

1997-06-011

PREAI

Real-time observation of alternating growth on GaSb(001) using core-level photoelectron spectroscopy

APPLIED SURFACE SCIENCE

IF6.9

1997-03-014

PREAI