Hiroyuki Kageshima - Publications, H-index & Citations

Hiroyuki Kageshima

Shimane University

33H指数

312论文数

4.8K被引数

收录论文 52

发表时间

First-principles study on network effects of medium on excess Si transport in Si oxide films 第一性原理研究介质网络效应对氧化硅薄膜中过量Si传输的影响

Materials Science in Semiconductor Processing

IF4.6

2026-03-10

PREAI

Hiroyuki Kageshima; Insung Seo; Toru Akiyama; Kenji Shiraishi

First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface 基于两层氧化物模型对热氧化界面处过剩Si在Si氧化物中的传输的第一性原理研究

Japanese Journal of Applied Physics

IF1.8

2026-02-16

PREAI

Kageshima, Hiroyuki; Seo, Insung; Akiyama, Toru; Shiraishi, Kenji

Epitaxial Intercalation Growth of hBN/Graphene Bilayer Heterostructure on Commercial Copper Foil

CHEMISTRY OF MATERIALS

IF7

2024-05-15

PREAI

Wang, Shengnan; Crowther, Jack; Kageshima, Hiroyuki; Hibino, Hiroki; Taniyasu, Yoshitaka

Electrical control of transient formation of electron-hole coexisting system at silicon metal-oxide-semiconductor interfaces

COMMUNICATIONS PHYSICS

IF5.8

2023-10-31

OAAI

Hori, Masahiro; Kume, Jinya; Razanoelina, Manjakavahoaka; Kageshima, Hiroyuki; Ono, Yukinori

First-principles study on silicon emission from interface into oxide during silicon thermal oxidation 硅热氧化过程中从界面到氧化物的硅发射的第一性原理研究

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2023-08-01

PREAI

Kageshima, Hiroyuki; Akiyama, Toru; Shiraishi, Kenji

Carbonization-driven motion of Si islands on epitaxial graphene

PHYSICAL REVIEW MATERIALS

IF3.4

2023-05-15

PREAI

Hibino, Hiroki; Kageshima, Hiroyuki

Ab initio-based approach for the oxidation mechanisms at SiO2/4H-SiC interface: Interplay of dry and wet oxidants during interfacial reaction

PHYSICAL REVIEW MATERIALS

IF3.4

2021-11-03

PREAI

Shimizu, Tsunashi; Akiyama, Toru; Ito, Tomonori; Kageshima, Hiroyuki; Uematsu, Masashi; Shiraishi, Kenji

Epitaxial Intercalation Growth of Scalable Hexagonal Boron Nitride/Graphene Bilayer Moire Materials with Highly Convergent Interlayer Angles 具有高度收敛层间角的可扩展六方氮化硼/石墨烯双层云纹材料的外延插层生长

ACS NANO

IF16

2021-09-14

PREAI

Wang, Shengnan; Crowther, Jack; Kageshima, Hiroyuki; Hibino, Hiroki; Taniyasu, Yoshitaka

Switching of magnetism via modifying phase shift of quantum-well states by tailoring the interface electronic structure

PHYSICAL REVIEW B

IF3.7

2020-01-09

OAAI

Sakuragi, Shunsuke; Kageshima, Hiroyuki; Sato, Tetsuya

Spontaneous distortion via the appearance of ferromagnetism in Pd ultrathin films: Observation of an inverse mechanism for the Stoner criterion

PHYSICAL REVIEW B

IF3.7

2018-06-18

OAAI

Sakuragi, Shunsuke; Tajiri, Hiroo; Kageshima, Hiroyuki; Sato, Tetsuya

Change in magnetization of ferromagnetic Pd(001) ultrathin films induced by the strain effect of BaTiO3

APPLIED PHYSICS LETTERS

IF3.6

2018-04-04

PREAI

Ban, Yusuke; Komatsu, Katsuyoshi; Sakuragi, Shunsuke; Taniyama, Tomoyasu; Kageshima, Hiroyuki; Sato, Tetsuya

Thickness-dependent appearance of ferromagnetism in Pd(100) ultrathin films

PHYSICAL REVIEW B

IF3.7

2014-08-18

PREAI

Sakuragi, S.; Sakai, T.; Urata, S.; Aihara, S.; Shinto, A.; Kageshima, H.; Sawada, M.; Namatame, H.; Taniguchi, M.; Sato, T.

Stability and reactivity of steps in the initial stage of graphene growth on the SiC(0001) surface

PHYSICAL REVIEW B

IF3.7

2013-12-03

PREAI

Kageshima, Hiroyuki; Hibino, Hiroki; Yamaguchi, Hiroshi; Nagase, Masao

Growth and low-energy electron microscopy characterization of monolayer hexagonal boron nitride on epitaxial cobalt

NANO RESEARCH

IF9

2013-04-12

118

PREAI

Orofeo, Carlo M.; Suzuki, Satoru; Kageshima, Hiroyuki; Hibino, Hiroki

Self organization of a hexagonal network of quasi-free-standing monolayer graphene nanoribbons

PHYSICAL REVIEW B

IF3.7

2013-04-04

PREAI

Murata, Y.; Takamura, M.; Kageshima, H.; Hibino, H.

First-principles calculation of 0th-layer graphene-like growth of C on SiC(0001)

PHYSICAL REVIEW B

IF3.7

2012-08-08

PREAI

Inoue, Masato; Kageshima, Hiroyuki; Kangawa, Yoshihiro; Kakimoto, Koichi

First-principles study of nonclassical effects in silicon-based nanocapacitors

PHYSICAL REVIEW B

IF3.7

2012-05-04

PREAI

Kageshima, Hiroyuki; Fujiwara, Akira

Growth and electronic transport properties of epitaxial graphene on SiC

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2012-03-29

PREAI

Hibino, H.; Tanabe, S.; Mizuno, S.; Kageshima, H.

Carrier transport mechanism in graphene on SiC(0001)

PHYSICAL REVIEW B

IF3.7

2011-09-27

PREAI

Tanabe, Shinichi; Sekine, Yoshiaki; Kageshima, Hiroyuki; Nagase, Masao; Hibino, Hiroki

Strong Stark effect in electroluminescence from phosphorous-doped silicon-on-insulator metal-oxide-semiconductor field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2011-01-18

PREAI

Noborisaka, J.; Nishiguchi, K.; Ono, Y.; Kageshima, H.; Fujiwara, A.

研究方向