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В.А. Тимофеев

Russian Academy of Sciences

H指数:14

被引数:660

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Epitaxial growth of GeSn/Si nanoheterostructures with ultrathin high-Sn content GeSn layers

GeSn/Si纳米异质结构中含超薄高Sn含量GeSn层的外延生长

Applied Surface Science

IF6.9

2026-07-010

PRE

Multiple quantum wells with ultrathin high-Sn fraction GeSn layers: Structural and optical properties

IF0

2025-10-010

OAAI

Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers

基于量子点、量子阱、伪omorphic和弛豫层的GeSiSn p-i-n光电二极管的红外光响应

IF2.8

2025-02-040

PRE

Structural, Optical and Electrophysical Properties of MBE-Based Multistacked GeSiSn Quantum Dots

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2025-01-011

PRE

Excitation of hybrid modes in plasmonic nanoantennas coupled with GeSiSn/Si multiple quantum wells for the photoresponse enhancement in the short-wave infrared range

APPLIED SURFACE SCIENCE

IF6.9

2024-06-012

PRE

Mid-Infrared Photodetectors Based on Lattice Matched SiGeSn/GeSn Heterojunction Bipolar Transistor With an i-GeSn Absorber Layer

IEEE SENSORS JOURNAL

IF4.5

2023-12-012

PRE

Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells

MATERIALS TODAY PHYSICS

IF9.7

2023-04-016

PRE

Tuning the structural and optical properties of GeSiSn/Si multiple quantum wells and GeSn nanostructures using annealing and a faceted surface as a substrate

APPLIED SURFACE SCIENCE

IF6.9

2022-08-019

PRE

Study of structural and optical properties of a dual-band material based on tin oxides and GeSiSn compounds

APPLIED SURFACE SCIENCE

IF6.9

2022-01-014

PRE

Epitaxial growth of peculiar GeSn and SiSn nanostructures using a Sn island array as a seed

APPLIED SURFACE SCIENCE

IF6.9

2021-07-015

PREAI

Formation of SnO and SnO2 phases during the annealing of SnO(x) films obtained by molecular beam epitaxy

通过分子束外延获得的SnO(x) 薄膜退火过程中SnO和SnO2相的形成

APPLIED SURFACE SCIENCE

IF6.9

2020-05-0148

PREAI

Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

NANOSCALE RESEARCH LETTERS

IF4.1

2018-01-1918

OAAI

Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors

Δ 掺杂对Ge/Si量子点中红外探测器空穴捕获概率的影响

NANOSCALE RESEARCH LETTERS

IF4.1

2014-09-166

OAAI

Electron localization in Ge/Si heterostructures with double quantum dots detected by an electron spin resonance method

PHYSICAL REVIEW B

IF3.7

2013-12-1223

PREAI

Initial stage growth of GexSi1-x layers and Ge quantum dot formation on GexSi1-x surface by MBE

NANOSCALE RESEARCH LETTERS

IF4.1

2012-10-0923

OAAI

Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)

NANOSCALE RESEARCH LETTERS

IF4.1

2012-08-3112

OAAI

Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2012-02-0318

PREAI

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

NANOSCALE RESEARCH LETTERS

IF4.1

2011-01-1214

OAAI