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A. A. Bloshkin

Russian Academy of Sciences

H指数:16

被引数:731

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Near-Infrared Photoresponse of Ge/Si Quantum Dot Waveguide Photodiodes Enhanced by Al Plasmonic Metastructures

锗硅量子点波导光电二极管的近红外光电响应通过铝等离极子超结构增强

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

IF1.9

2025-11-010

PRE

Infrared photoresponse of GeSiSn p-i-n photodiodes based on quantum dots, quantum wells, pseudomorphic and relaxed layers

基于量子点、量子阱、伪omorphic和弛豫层的GeSiSn p-i-n光电二极管的红外光响应

IF2.8

2025-02-040

PRE

Excitation of hybrid modes in plasmonic nanoantennas coupled with GeSiSn/Si multiple quantum wells for the photoresponse enhancement in the short-wave infrared range

APPLIED SURFACE SCIENCE

IF6.9

2024-06-012

PRE

Emission Enhancement of Ge/Si Quantum Dots in Hybrid Structures with Subwavelength Lattice of Al Nanodisks

IF4.3

2023-08-252

OAAI

Remarkable enhancement of photoluminescence and photoresponse due to photonic crystal structures based on GeSiSn/Si multiple quantum wells

MATERIALS TODAY PHYSICS

IF9.7

2023-04-016

PRE

Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

IF4.3

2023-02-2811

OAAI

Tuning the structural and optical properties of GeSiSn/Si multiple quantum wells and GeSn nanostructures using annealing and a faceted surface as a substrate

APPLIED SURFACE SCIENCE

IF6.9

2022-08-019

PRE

Near-Infrared Photoresponse in Ge/Si Quantum Dots Enhanced by Photon-Trapping Hole Arrays

光子俘获空穴阵列增强Ge/Si量子点的近红外光响应

IF4.3

2021-09-0413

OAAI

Quantum dot based mid-infrared photodetector enhanced by a hybrid metal-dielectric optical antenna

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-06-1016

PREAI

Surface plasmon dispersion in a mid-infrared Ge/Si quantum dot photodetector coupled with a perforated gold metasurface

APPLIED PHYSICS LETTERS

IF3.6

2018-04-2422

PREAI

Morphology, Structure, and Optical Properties of Semiconductor Films with GeSiSn Nanoislands and Strained Layers

NANOSCALE RESEARCH LETTERS

IF4.1

2018-01-1918

OAAI

Photovoltaic Ge/SiGe quantum dot mid-infrared photodetector enhanced by surface plasmons

IF3.3

2017-10-0631

OAAI

Phonon bottleneck in p-type Ge/Si quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2015-11-2317

PREAI

Localization of electrons in dome-shaped GeSi/Si islands

APPLIED PHYSICS LETTERS

IF3.6

2015-01-2215

PREAI

Influence of delta-doping on the hole capture probability in Ge/Si quantum dot mid-infrared photodetectors

Δ 掺杂对Ge/Si量子点中红外探测器空穴捕获概率的影响

NANOSCALE RESEARCH LETTERS

IF4.1

2014-09-166

OAAI

Electronic states in vertically ordered Ge/Si quantum dots detected by photocurrent spectroscopy

PHYSICAL REVIEW B

IF3.7

2014-07-2216

PREAI

Photovoltaic Ge/Si quantum dot detectors operating in the mid-wave atmospheric window (3 to 5 μm)

NANOSCALE RESEARCH LETTERS

IF4.1

2012-08-3112

OAAI

Effect of overgrowth temperature on the mid-infrared response of Ge/Si(001) quantum dots

APPLIED PHYSICS LETTERS

IF3.6

2012-02-0318

PREAI

Electromodulated reflectance study of self-assembled Ge/Si quantum dots

NANOSCALE RESEARCH LETTERS

IF4.1

2011-03-099

OAAI

Calculating the energy spectrum and electronic structure of two holes in a pair of strained Ge/Si coupled quantum dots

PHYSICAL REVIEW B

IF3.7

2010-03-1925

PREAI