Farid Medjdoub - Publications, H-index & Citations

Farid Medjdoub

centrale lille

31H指数

249论文数

3.4K被引数

收录论文 16

发表时间

Understanding and Quantifying the Benefit of Graded Aluminum Gallium Nitride Channel High-Electron Mobility Transistors

MICROMACHINES

IF3

2024-11-08

OAAI

Grandpierron, Francois; Carneiro, Elodie; Ben-Hammou, Lyes; Moon, Jeong-Sun; Medjdoub, Farid

Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications 面向下一代毫米波应用的新兴GaN技术

IEEE MICROWAVE MAGAZINE

IF2.6

2024-10-01

PREAI

Medjdoub, Farid; Shinohara, Keisuke; Thome, Fabian; Moon, Jeong-sun; Chumbes, Eduardo; Guidry, Matthew T.; Mishra, Umesh; Zanoni, Enrico; Meneghini, Matteo; Meneghesso, Gaudenzio; Pomeroy, James W.; Thingujam, Terirama; Kuball, Martin

Optimization of Non-Alloyed Backside Ohmic Contacts to N-Face GaN for Fully Vertical GaN-on-Silicon-Based Power Devices 用于完全垂直的硅基GaN功率器件的N面GaN的非合金背面欧姆接触的优化

MICROMACHINES

IF3

2024-09-15

OAAI

Hamdaoui, Youssef; Vandenbroucke, Sofie S. T.; Michler, Sondre; Ziouche, Katir; Minjauw, Matthias M.; Detavernier, Christophe; Medjdoub, Farid

Physical insight of thin AlGaN back barrier for millimeter-wave high voltage AlN/GaN on SiC HEMTs

APPLIED PHYSICS LETTERS

IF3.6

2023-10-02

OAAI

Shanbhag, Ajay; Grandpierron, Francois; Harrouche, Kathia; Medjdoub, Farid

Assessment of large critical electric field in ultra-wide bandgap p-type spinel ZnGa2O4

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2023-02-22

OAAI

Chi, Zeyu; Tchelidze, Tamar; Sartel, Corinne; Gamsakhurdashvili, Tsotne; Madaci, Ismail; Yamano, Hayate; Sallet, Vincent; Dumont, Yves; Perez-Tomas, Amador; Medjdoub, Farid; Chikoidze, Ekaterine

Low Trapping Effects and High Electron Confinement in Short AlN/GaN-On-SiC HEMTs by Means of a Thin AlGaN Back Barrier

MICROMACHINES

IF3

2023-01-22

OAAI

Harrouche, Kathia; Venkatachalam, Srisaran; Ben-Hammou, Lyes; Grandpierron, Francois; Okada, Etienne; Medjdoub, Farid

Low Buffer Trapping Effects above 1200 V in Normally off GaN-on-Silicon Field Effect Transistors

MICROMACHINES

IF3

2022-09-14

OAAI

Abid, Idriss; Hamdaoui, Youssef; Mehta, Jash; Derluyn, Joff; Medjdoub, Farid

Editorial for the Special Issue on Wide Bandgap Based Devices: Design, Fabrication and Applications

MICROMACHINES

IF3

2021-01-15

OAAI

Medjdoub, Farid

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

MATERIALS TODAY PHYSICS

IF9.7

2020-12-01

OAAI

Chikoidze, E.; Tchelidze, T.; Sartel, C.; Chi, Z.; Kabouche, R.; Madaci, I; Rubio, C.; Mohamed, H.; Sallet, V; Medjdoub, F.; Perez-Tomas, A.; Dumont, Y.

The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors

SCIENTIFIC REPORTS

IF3.9

2020-10-14

OAAI

Besendoerfer, Sven; Meissner, Elke; Medjdoub, Farid; Derluyn, Joff; Friedrich, Jochen; Erlbacher, Tobias

High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

MATERIALS

IF3.2

2020-09-25

OAAI

Tajalli, Alaleh; Meneghini, Matteo; Besendoerfer, Sven; Kabouche, Riad; Abid, Idriss; Puesche, Roland; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Meissner, Elke; Zanoni, Enrico; Medjdoub, Farid; Meneghesso, Gaudenzio

Vertical Leakage in GaN-on-Si Stacks Investigated by a Buffer Decomposition Experiment

MICROMACHINES

IF3

2020-01-17

OAAI

Tajalli, Alaleh; Borga, Matteo; Meneghini, Matteo; De Santi, Carlo; Benazzi, Davide; Besendoerfer, Sven; Pusche, Roland; Derluyn, Joff; Degroote, Stefan; Germain, Marianne; Kabouche, Riad; Abid, Idriss; Meissner, Elke; Zanoni, Enrico; Medjdoub, Farid; Meneghesso, Gaudenzio

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors

APPLIED PHYSICS LETTERS

IF3.6

2019-11-25

OAAI

Lu, Jun; Chen, Jr-Tai; Dahlqvist, Martin; Kabouche, Riad; Medjdoub, Farid; Rosen, Johanna; Kordina, Olof; Hultman, Lars

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates

MICROMACHINES

IF3

2019-10-12

OAAI

Abid, Idriss; Kabouche, Riad; Bougerol, Catherine; Pernot, Julien; Masante, Cedric; Comyn, Remi; Cordier, Yvon; Medjdoub, Farid

GaN-Based Laser Wireless Power Transfer System

MATERIALS

IF3.2

2018-01-17

OAAI

De Santi, Carlo; Meneghini, Matteo; Caria, Alessandro; Dogmus, Ezgi; Zegaoui, Malek; Medjdoub, Farid; Kalinic, Boris; Cesca, Tiziana; Meneghesso, Gaudenzio; Zanoni, Enrico

Demonstration of low leakage current and high polarization in ultrathin AlN/GaN high electron mobility transistors grown on silicon substrate

APPLIED PHYSICS LETTERS

IF3.6

2011-05-31

OAAI

Medjdoub, F.; Zegaoui, M.; Rolland, N.; Rolland, P. A.

研究方向