Enrico Zanoni

University of Padua

H指数:64

被引数:2.0万

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Characterization and Modeling of Vertical Diodes With AlGaN-Based p-Type Distributed Polarization Doping

基于AlGaN的p型分布极化掺杂垂直二极管的表征与建模

IEEE Transactions on Electron Devices

IF3.2

2026-10-080

Optical Degradation of 845 nm VCSELs With Different Oxide Apertures for Silicon Photonics

硅光子用845 nm VCSEL在不同氧化孔径下的光学降解

IEEE Journal of Selected Topics in Quantum Electronics

IF5.1

2026-09-290

PRE

Identification of boron-related traps via capacitance spectroscopy in diamond Schottky diodes

通过电容谱技术鉴定金刚石肖特基二极管中的硼相关陷阱

Diamond and Related Materials

IF5.1

2026-07-010

OAAI

A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films

基于低掺杂p-GaN薄膜的肖特基栅极p-GaN鳍状沟道场效应晶体管

Japanese Journal of Applied Physics

IF1.8

2025-12-010

PRE

Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTs

E-模式GaN HEMTs中可持续雪崩运行模式的实验证据

IEEE Electron Device Letters

IF4.5

2025-11-130

OAAI

Deep-Level Effects in Back-Barrier-Scaled GaN HEMTs

背势垒GaN hemt中的深层效应

IEEE Transactions on Microwave Theory and Techniques

IF4.5

2025-10-300

PRE

Solid State Lighting Systems for Horticulture: Impact of LED Degradation on Light Spectrum and Intensity

园艺用固态照明系统：LED老化对光光谱和光强度的影响

IEEE Transactions on Industry Applications

IF4.5

2025-07-010

PRE

Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques

不同原子层沉积技术下Al2O3/GaN MOS电容器的陷阱与可靠性系统分析

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2025-05-180

OAAI

Modeling the capacitance-voltage characteristics of AlGaN-based UV-C LEDs

基于AlGaN的UV-C LED电容-电压特性建模

SCIENTIFIC REPORTS

IF3.9

2025-04-180

Degradation of 1.3 μm Quantum Dot Laser Diodes for Silicon Photonics: Dependence on the Number of Dot-in-a-Well Layers

用于硅光子学的1.3 μ m量子点激光二极管的退化: 取决于阱中的点层数

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2025-03-010

PRE

Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

IF5.1

2025-03-010

PRE

Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-11-010

Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications

面向下一代毫米波应用的新兴GaN技术

IEEE MICROWAVE MAGAZINE

IF2.6

2024-10-012

PRE

Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-08-290

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2024-08-085

Origin and Recovery of Negative V TH Shift on 4H-SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2024-07-010

OAAI

Positive VTH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage

肖特基p-gan栅极功率hemt中的正VTH偏移: 对温度，偏置和栅极泄漏的依赖性

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2024-06-011

Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization

ACS PHOTONICS

IF6.7

2023-11-112

Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric

APPLIED PHYSICS LETTERS

IF3.6

2023-09-073

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

APPLIED PHYSICS LETTERS

IF3.6

2023-05-049

Enrico Zanoni

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