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E

Enrico Zanoni

University of Padua

64H指数
1.0K论文数
2.1W被引数
收录论文 85
发表时间
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A Schottky gate p-GaN fin-channel field effect transistor on very low-doped p-GaN films基于低掺杂p-GaN薄膜的肖特基栅极p-GaN鳍状沟道场效应晶体管
errJapanese Journal of Applied Physics
IF1.8
err2025-12-01
err0
PREAI
errFregolent, Manuel; Singh, Simranjit; Lu, Shun; Watanabe, Hirotaka; Wang, Jia; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo; Honda, Yoshio; Amano, Hiroshi; Sarkar, Biplab
err分享
err收藏
Experimental Evidence of Sustainable Avalanche Operation in E-Mode GaN HEMTsE-模式GaN HEMTs中可持续雪崩运行模式的实验证据
errIEEE Electron Device Letters
IF4.5
err2025-11-13
err0
errOAAI
errRiccardo Fraccaroli; Matteo Dell'Andrea; Manuel Fregolent; Mirco Boito; Simone Leonardo Longato; Carlo De Santi; Isabella Rossetto; Enrico Zanoni; Gaudenzio Meneghesso; Alessio Pirani; Giansalvo Pizzo; Cristina Miccoli; Alfio Russo; Maria Eloisa Castagna; Ferdinando Iucolano; Matteo Meneghini
err分享
err收藏
Deep-Level Effects in Back-Barrier-Scaled GaN HEMTs背势垒GaN hemt中的深层效应
errIEEE Transactions on Microwave Theory and Techniques
IF4.5
err2025-10-30
err0
PREAI
errFrancesco De Pieri; Andrea Carlotto; Manuel Fregolent; Alberto Cavaliere; Marco Saro; Fabiana Rampazzo; Carlo De Santi; Veronica Gao Zhan; Gaudenzio Meneghesso; Matteo Meneghini; Enrico Zanoni
err分享
err收藏
Solid State Lighting Systems for Horticulture: Impact of LED Degradation on Light Spectrum and Intensity园艺用固态照明系统：LED老化对光光谱和光强度的影响
errIEEE Transactions on Industry Applications
IF4.5
err2025-07-01
err0
PREAI
errNicola Trivellin; Matteo Buffolo; Alessandro Caria; Carlo De Santi; Giulia Pierobon; Riccardo Fraccaroli; Gaudenzio Meneghesso; Enrico Zanoni; Matteo Meneghini
err分享
err收藏
Systematic analysis of the trapping and reliability of Al2O3/GaN MOS capacitors with different atomic layer deposition techniques不同原子层沉积技术下Al2O3/GaN MOS电容器的陷阱与可靠性系统分析
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2025-05-18
err0
errOAAI
errFregolent, Manuel; Tomasi, Marco; De Santi, Carlo; Buffolo, Matteo; Tadmor, Liad; Brusaterra, Enrico; Treidel, Eldad Bahat; Cester, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Modeling the capacitance-voltage characteristics of AlGaN-based UV-C LEDs基于AlGaN的UV-C LED电容-电压特性建模
errSCIENTIFIC REPORTS
IF3.9
err2025-04-18
err0
errOAAI
errRoccato, Nicola; Piva, Francesco; Buffolo, Matteo; De Santi, Carlo; Trivellin, Nicola; Schilling, Marcel; Muhin, Anton; Hoepfner, Jakob; Guttmann, Martin; Wernicke, Tim; Kneissl, Michael; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Degradation of 1.3 μm Quantum Dot Laser Diodes for Silicon Photonics: Dependence on the Number of Dot-in-a-Well Layers用于硅光子学的1.3 μ m量子点激光二极管的退化: 取决于阱中的点层数
errIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
IF5.1
err2025-03-01
err0
PREAI
errZenari, Michele; Gioannini, Mariangela; Buffolo, Matteo; Tibaldi, Alberto; De Santi, Carlo; Norman, Justin; Shang, Chen; Dumont, Mario; Bowers, John E.; Herrick, Robert W.; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Impact of the Oxide Aperture Width on the Degradation of 845 Nm VCSELs for Silicon Photonics
errIEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
IF5.1
err2025-03-01
err0
PREAI
errZenari, Michele; Buffolo, Matteo; Rampazzo, Fabiana; De Santi, Carlo; Rossi, Francesca; Lazzarini, Laura; Goyvaerts, Jeroen; Grabowski, Alexander; Gustavsson, Johan S.; Baets, Roel; Larsson, Anders; Roelkens, Gunther; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Experimental and Numerical Analysis of Off-State Bias Induced Instabilities in Vertical GaN-on-Si Trench MOSFETs
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2024-11-01
err0
errOAAI
errZagni, Nicolo; Fregolent, Manuel; Verzellesi, Giovanni; Bergamin, Francesco; Favero, Davide; De Santi, Carlo; Meneghesso, Gaudenzio; Zanoni, Enrico; Huber, Christian; Meneghini, Matteo; Pavan, Paolo
err分享
err收藏
Emerging GaN Technologies for Next-Generation Millimeter-Wave Applications面向下一代毫米波应用的新兴GaN技术
errIEEE MICROWAVE MAGAZINE
IF2.6
err2024-10-01
err2
PREAI
errMedjdoub, Farid; Shinohara, Keisuke; Thome, Fabian; Moon, Jeong-sun; Chumbes, Eduardo; Guidry, Matthew T.; Mishra, Umesh; Zanoni, Enrico; Meneghini, Matteo; Meneghesso, Gaudenzio; Pomeroy, James W.; Thingujam, Terirama; Kuball, Martin
err分享
err收藏
Investigation and modeling of the role of interface defects in the optical degradation of InGaN/GaN LEDs
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2024-08-29
err0
errOAAI
errRoccato, Nicola; Piva, Francesco; Buffolo, Matteo; Santi, Carlo De; Trivellin, Nicola; Haller, Camille; Carlin, Jean-Francois; Grandjean, Nicolas; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results
errJOURNAL OF PHYSICS D-APPLIED PHYSICS
IF3.2
err2024-08-08
err5
errOAAI
errFregolent, Manuel; Piva, Francesco; Buffolo, Matteo; De Santi, Carlo; Cester, Andrea; Higashiwaki, Masataka; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Origin and Recovery of Negative V TH Shift on 4H-SiC MOS Capacitors: An Analysis Based on Inverse Laplace Transform and Temperature-Dependent Measurements
errMATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
IF4.6
err2024-07-01
err0
errOAAI
errMarcuzzi, A.; Avramenko, M.; De Santi, C.; Geenen, F.; Moens, P.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
err分享
err收藏
Positive VTH Shift in Schottky p-GaN Gate Power HEMTs: Dependence on Temperature, Bias and Gate Leakage肖特基p-gan栅极功率hemt中的正VTH偏移: 对温度，偏置和栅极泄漏的依赖性
errIEEE TRANSACTIONS ON POWER ELECTRONICS
IF6.5
err2024-06-01
err1
errOAAI
errModolo, Nicola; De Santi, Carlo; Sicre, Sebastien; Minetto, Andrea; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Addressing the Optical Degradation of 1.3 μm Quantum Dot Lasers through Subthreshold Characterization
errACS PHOTONICS
IF6.7
err2023-11-11
err2
errOAAI
errZenari, Michele; Buffolo, Matteo; De Santi, Carlo; Norman, Justin; Hughes, Eamonn T.; Bowers, John E.; Herrick, Robert; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Gate leakage modeling in lateral β-Ga2O3 MOSFETs with Al2O3 gate dielectric
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-09-07
err3
errOAAI
errFregolent, Manuel; Brusaterra, Enrico; De Santi, Carlo; Tetzner, Kornelius; Wurfl, Joachim; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-05-04
err9
errOAAI
errPiva, F.; Pilati, M.; Buffolo, M.; Roccato, N.; Susilo, N.; Vidal, D. Hauer; Muhin, A.; Sulmoni, L.; Wernicke, T.; Kneissl, M.; De Santi, C.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
err分享
err收藏
Modeling the electrical degradation of AlGaN-based UV-C LEDs by combined deep-level optical spectroscopy and TCAD simulations
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-04-20
err16
PREAI
errRoccato, Nicola; Piva, Francesco; De Santi, Carlo; Buffolo, Matteo; Fregolent, Manuel; Pilati, Marco; Susilo, Norman; Vidal, Daniel Hauer; Muhin, Anton; Sulmoni, Luca; Wernicke, Tim; Kneissl, Michael; Meneghesso, Gaudenzio; Zanoni, Enrico; Meneghini, Matteo
err分享
err收藏
Impact of Mg-doping on the performance and degradation of AlGaN-based UV-C LEDs
errAPPLIED PHYSICS LETTERS
IF3.6
err2023-04-13
err10
PREAI
errPiva, F.; Grigoletto, M.; Brescancin, R.; De Santi, C.; Buffolo, M.; Ruschel, J.; Glaab, J.; Vidal, D. Hauer; Guttmann, M.; Rass, J.; Einfeldt, S.; Susilo, N.; Wernicke, T.; Kneissl, M.; Meneghesso, G.; Zanoni, E.; Meneghini, M.
err分享
err收藏
Impact of Generation and Relocation of Defects on Optical Degradation of Multi-Quantum-Well InGaN/GaN-Based Light-Emitting Diode
errMICROMACHINES
IF3
err2022-08-06
err2
errOAAI
errCasu, Claudia; Buffolo, Matteo; Caria, Alessandro; De Santi, Carlo; Zanoni, Enrico; Meneghesso, Gaudenzio; Meneghini, Matteo
err分享
err收藏

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