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Jinrong Zhou

minnan normal university

H指数:8

被引数:286

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High-Responsivity and >43.5 GHz Bandwidth Ge/Si PIN Photodetector Enabled by Microcrystalline Ge Wafer Bonding and Smart-Cut Technology

高响应度和>43.5 GHz带宽的Ge/Si PIN光电探测器，通过微晶锗晶圆键合和Smart-Cut技术实现

IEEE Transactions on Electron Devices

IF3.2

2026-10-130

PRE

PtSe2/GeSn/InP 2D-3D heterojunction based on MBE-grown high-Sn-content GeSn film for high-responsivity broadband infrared detection via negative photoconductivity effect

MBE生长的高Sn含量GeSn薄膜构成的PtSe2/GeSn/InP 2D-3D异质结，基于负光电导效应实现高响应度宽带红外探测

Applied Surface Science

IF6.9

2026-08-010

PRE

Defect-Engineered ITO/WSe2/W/Si Heterojunction for Broadband Photodetection and Waveform-Encoded Optical Communication

缺陷工程化的ITO/WSe2/W/Si异质结用于宽带光电探测和波形编码光通信

ACS Applied Materials & Interfaces

IF0

2026-01-010

PRE

Negative Photoconductivity Engineering in High-Sn GeSn/InP Heterostructures Enabling Record-Breaking Photoresponse for Short Wave Infrared Detection

高Sn GeSn/InP异质结构中的负光导电性工程，实现了用于短波红外探测的破纪录光响应

Journal of Lightwave Technology

IF4.8

2025-12-300

PRE

In Situ Selenization-Enabled PdSe2 Homojunctions for Ultrahigh Polarization Sensitivity and Rapid Broadband Photodetection

原位硒化法制备的PdSe2同质结用于超高偏振灵敏度和快速宽带光探测

ADVANCED OPTICAL MATERIALS

IF7.2

2025-11-010

PRE

In Situ Selenization-Engineered PtSe2/PdSe2 Heterostructures for Short-Wave Infrared Polarization-Sensitive Photodetection and Information Transmission

原位硒化工程PtSe2/PdSe2异质结构用于短波红外偏振敏感光探测和信息传输

ADVANCED OPTICAL MATERIALS

IF7.2

2025-11-010

PRE

High-vacuum Ar plasma-activated in-situ wafer bonding for low-dislocation-density Ge-on-SOI heterojunction with microcrystalline Ge interlayer

高真空Ar等离子体原位晶圆键合技术用于低位错密度Ge-on-SOI异质结的微晶Ge中间层制备

Applied Surface Science

IF6.9

2025-10-300

PRE

Selenization Growth Mechanism of PdSe2 Nanoscale-Thick Films in Large-Diameter Quartz Tube and PdSe2/Si 2D-3D PIN-like Photodetectors

大直径石英管中PdSe2纳米级厚膜硒化生长机制及PdSe2/Si 2D-3D PIN-like光电探测器

ACS Applied Nano Materials

IF5.5

2025-10-290

PRE

300–2200 nm Broadband Si Schottky Photodetectors With Ultra-Low Dark Current (<10 nA/cm²) via Al₂O₃/SiO_x Interface Engineering

300–2200 nm宽带Si肖特基光电探测器，通过Al<sub>2</sub>O<sub>3</sub>/SiO<sub>x</sub>界面工程实现超低暗电流(<10 nA/cm<sup>2</sup>)

Journal of Lightwave Technology

IF4.8

2025-08-290

PRE

Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayer

IF3.3

2024-12-230

OA

High-Speed Self-Powered PdSe2/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe2 Quantum Island Structure

ACS APPLIED MATERIALS & INTERFACES

IF8.2

2024-08-052

PRE

High-Speed Broadband PtSe2/Si 2D-3D Pin Photodetector with a Lightly n-Doped Si Interlayer Based on Single-Oriented PtSe2

基于单取向PtSe2的具有轻n掺杂Si中间层的高速宽带PtSe2/Si 2D-3D Pin光电探测器

IF6.7

2024-07-114

PRE

Interface characteristics of InP/Si heterojunction fabricated by low-temperature wafer bonding based on microcrystalline Ge interlayer

IF3.9

2024-05-010

PRE

High-quality Ge/Si hetero-bonding by sputtered microcrystalline Ge interlayer

IF3.9

2023-08-013

PRE

Blocking of Ge/Si lattice mismatch and fabrication of high-quality SOI-based Ge film by interlayer wafer bonding with polycrystalline Ge bonding layer

IF3.9

2022-09-013

PRE

Inorganic Lead-Free B-γ-CsSnI3 Perovskite Solar Cells Using Diverse Electron-Transporting Materials: A Simulation Study

使用多种电子传输材料的无机无铅B-γ-CsSnI3钙钛矿太阳能电池: 模拟研究

IF4.3

2021-09-2940

OAAI

Double intermediate bonding layers for the fabrication of high-quality silicon-on-insulator-based exfoliated Ge film with excellent high-temperature characteristics

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2020-02-182

PREAI

Polycrystalline Ge intermediate layer for Ge/Si wafer bonding and defect elimination in Si (SOI)-based exfoliated Ge film

用于Si (SOI) 基剥离Ge膜中Ge/Si晶片键合和缺陷消除的多晶Ge中间层

IF3.9

2020-02-017

PREAI

Numerical analysis of InxGa1-xN/SnS and AlxGa1-xN/SnS heterojunction solar cells

ENERGY CONVERSION AND MANAGEMENT

IF10.9

2016-07-0121

PREAI

Numerical analysis of SnS homojunction solar cell

SnS同质结太阳能电池的数值分析

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2016-03-0120

PREAI