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T

Teppo Huhtio

Russian Academy of Sciences

H指数:13

被引数:616

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Nonlinear imaging of nanostructures using beams with binary phase modulation

IF3.3

2017-04-263

OAAI

Nanowire encapsulation with polymer for electrical isolation and enhanced optical properties

IF9

2017-03-1419

PREAI

Tailorable second-harmonic generation from an individual nanowire using spatially phase-shaped beams

LASER & PHOTONICS REVIEWS

IF10

2016-11-2825

PREAI

Generation of terahertz radiation in ordered arrays of GaAs nanowires

APPLIED PHYSICS LETTERS

IF3.6

2015-06-2518

PREAI

Second-Harmonic Generation Imaging of Semiconductor Nanowires with Focused Vector Beams

具有聚焦矢量光束的半导体纳米线的二次谐波成像

IF9.1

2015-02-0672

PREAI

Fabrication of Dual-Type Nanowire Arrays on a Single Substrate

IF9.1

2015-02-0611

PREAI

Properties of atomic-layer-deposited ultra-thin AIN films on GaAs surfaces

APPLIED SURFACE SCIENCE

IF6.9

2014-09-018

PREAI

Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers

APPLIED PHYSICS LETTERS

IF3.6

2014-07-2437

OAAI

Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2014-01-2910

PREAI

Influence of plasma chemistry on impurity incorporation in AlN prepared by plasma enhanced atomic layer deposition

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2013-11-2735

PREAI

Aluminum-Induced Photoluminescence Red Shifts in Core-Shell GaAs/AlxGa1-xAs Nanowires

IF9.1

2013-08-0627

PREAI

High Quality GaAs Nanowires Grown on Glass Substrates

在玻璃衬底上生长的高质量GaAs纳米线

IF9.1

2012-03-2777

PRE

High-k GaAs metal insulator semiconductor capacitors passivated by ex-situ plasma-enhanced atomic layer deposited AlN for Fermi-level unpinning

APPLIED PHYSICS LETTERS

IF3.6

2012-02-1720

PREAI

Properties of AlN grown by plasma enhanced atomic layer deposition

等离子体增强原子层沉积生长AlN的性能

APPLIED SURFACE SCIENCE

IF6.9

2011-06-01125

PREAI