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S

S. P. Łepkowski

Polish Academy of Sciences

18H指数
76论文数
1.3K被引数
收录论文 27
发表时间
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Impact of barrier width on topological insulator phase in InN/InGaN quantum wells with moderate strain
errSCIENTIFIC REPORTS
IF3.9
err2025-02-28
err0
errOAAI
errLepkowski, S. P.
err分享
err收藏
Quantum Spin Hall Effect in Two-Monolayer-Thick InN/InGaN Coupled Multiple Quantum Wells双单层厚InN/InGaN耦合多量子阱中的量子自旋霍尔效应
errNANOMATERIALS
IF4.3
err2023-07-30
err1
errOAAI
errLepkowski, Slawomir P.
err分享
err收藏
Advances in Topological Materials: Fundamentals, Challenges and Outlook
errNANOMATERIALS
IF4.3
err2022-10-08
err1
errOAAI
errLepkowski, Slawomir P.
err分享
err收藏
Polarization-Induced Phase Transitions in Ultra-Thin InGaN-Based Double Quantum Wells超薄InGaN基双量子阱中的极化诱导相变
errNANOMATERIALS
IF4.3
err2022-07-14
err3
errOAAI
errLepkowski, Slawomir P.; Anwar, Abdur Rehman
err分享
err收藏
Recent Progress in Micro-LED-Based Display Technologies
errLASER & PHOTONICS REVIEWS
IF10
err2022-04-07
err149
errOAAI
errAnwar, Abdur Rehman; Sajjad, Muhammad T.; Johar, Muhammad Ali; Hernandez-Gutierrez, Carlos A.; Usman, Muhammad; Lepkowski, S. P.
err分享
err收藏
First-principles calculation of higher-order elastic constants using exact deformation-gradient tensors
errPHYSICAL REVIEW B
IF3.7
err2020-10-23
err10
PREAI
errLepkowski, S. P.
err分享
err收藏
Topological insulator with negative spin-orbit coupling and transition between Weyl and Dirac semimetals in InGaN-based quantum wells
errSCIENTIFIC REPORTS
IF3.9
err2018-10-18
err14
errOAAI
errLepkowski, S. P.; Bardyszewski, W.
err分享
err收藏
Nonlinear Zeeman splitting of magnetoexcitons in c-plane wurtzite GaN-based quantum wells
errPHYSICAL REVIEW B
IF3.7
err2014-08-08
err11
PREAI
errBardyszewski, W.; Lepkowski, S. P.
err分享
err收藏
Deformation potentials in AlGaN and InGaN alloys and their impact on optical polarization properties of nitride quantum wells
errPHYSICAL REVIEW B
IF3.7
err2013-08-21
err20
PREAI
errLepkowski, S. P.; Gorczyca, I.; Stefanska-Skrobas, K.; Christensen, N. E.; Svane, A.
err分享
err收藏
Pressure-dependent reordering of valence band states in GaN/AlxGa1-xN quantum wells
errPHYSICAL REVIEW B
IF3.7
err2012-01-24
err12
PREAI
errBardyszewski, W.; Lepkowski, S. P.
err分享
err收藏
Ab initio study of elastic constants in InxGa1-xN and InxAl1-xN wurtzite alloys (vol 83, 203201, 2011)
errPHYSICAL REVIEW B
IF3.7
err2011-06-20
err0
errOAAI
errLepkowski, S. P.; Gorczyca, I.
err分享
err收藏
Ab initio study of elastic constants in InxGa1-xN and InxAl1-xN wurtzite alloys
errPHYSICAL REVIEW B
IF3.7
err2011-05-31
err41
PREAI
errLepkowski, S. P.; Gorczyca, I.
err分享
err收藏
Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors
errPHYSICAL REVIEW B
IF3.7
err2010-06-09
err29
PREAI
errGorczyca, I.; Kaminska, A.; Staszczak, G.; Czernecki, R.; Lepkowski, S. P.; Suski, T.; Schenk, H. P. D.; Glauser, M.; Butte, R.; Carlin, J. -F.; Feltin, E.; Grandjean, N.; Christensen, N. E.; Svane, A.
err分享
err收藏
Influence of indium clustering on the band structure of semiconducting ternary and quaternary nitride alloys
errPHYSICAL REVIEW B
IF3.7
err2009-08-05
err141
PREAI
errGorczyca, I.; Lepkowski, S. P.; Suski, T.; Christensen, N. E.; Svane, A.
err分享
err收藏
Significance of third-order elasticity for determination of the pressure coefficient of the light emission in strained quantum wells
errPHYSICAL REVIEW B
IF3.7
err2008-10-24
err9
PREAI
errLepkowski, S. P.
err分享
err收藏
Theoretical study of the effect of nonlinear piezoelectricity on the pressure coefficient of the light emission in (111)-oriented InGaAs/GaAs quantum wells
errPHYSICAL REVIEW B
IF3.7
err2008-04-28
err15
PREAI
errLepkowski, S. P.
err分享
err收藏
Nonlinear elasticity effect in group III-nitride quantum heterostructures:: Ab initio calculations
errPHYSICAL REVIEW B
IF3.7
err2007-05-03
err60
PREAI
errLepkowski, S. P.
err分享
err收藏
Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies (vol 89, art no 051902, 2006)
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-11-14
err0
errOAAI
errTeisseyre, H.; Suski, T.; Lepkowski, S. P.; Perlin, P.; Jurczak, G.; Dluzewski, P.; Daudin, B.; Grandjean, N.
err分享
err收藏
Strong electric field and nonuniformity effects in GaN/AlN quantum dots revealed by high pressure studies
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-07-31
err9
PREAI
errTeisseyre, H.; Suski, T.; Lepkowski, S. P.; Perlin, P.; Jurczak, G.; Dluzewski, P.; Daudin, B.; Grandjean, N.
err分享
err收藏
Effect of electromechanical coupling on the pressure coefficient of light emission in group-III nitride quantum wells and superlattices
errPHYSICAL REVIEW B
IF3.7
err2006-07-26
err31
PREAI
errLepkowski, S. P.; Majewski, J. A.
err分享
err收藏

研究方向

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