A. F. Tsatsul’nikov - Publications, H-index & Citations

A. F. Tsatsul’nikov

russian academy of sciences

33H指数

329论文数

4.6K被引数

收录论文 24

发表时间

High Temperature Operation and Spectral Stability of InGaN/GaN Ring Microlasers on Silicon 硅基InGaN/GaN环形微激光器的高温工作与光谱稳定性

IEEE Photonics Technology Letters

IF2.5

2026-02-15

PREAI

Kryzhanovskaya, Natalia V.; Komarov, Sergey D.; Moiseev, Eduard I.; Ivanov, Konstantin A.; Masyutin, Dmitry A.; Makhov, Ivan S.; Tsatsul'nikov, Andrey F.; Sakharov, Alexey V.; Arteev, Dmitry S.; Lutsenko, Evgenii V.; Vainilovich, Aliaksei G.; Nikolaev, Andrey E.; Zavarin, Evgeniy E.; Pivovarova, Antonina A.; Il'inskaya, Natalia D.; Smirnova, Irina P.; Markov, Lev K.; Cherkashin, Nikolay; Zhukov, Alexey E.

(In,Ga)N-GaN resonant Bragg structures with single and double quantum wells in the unit supercell

APPLIED PHYSICS LETTERS

IF3.6

2024-11-05

PREAI

Ivanov, A. A.; Chaldyshev, V. V.; Zavarin, E. E.; Sakharov, A. V.; Lundin, W. V.; Tsatsulnikov, A. F.

Resonant optical reflection from a GaN/(Al,Ga)N excitonic Bragg structure

APPLIED PHYSICS LETTERS

IF3.6

2023-09-19

PREAI

Ivanov, A. A.; Chaldyshev, V. V.; Zavarin, E. E.; Sakharov, A. V.; Lundin, W. V.; Tsatsulnikov, A. F.

AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

MATERIALS

IF3.2

2023-06-08

OAAI

Sakharov, Alexei V.; Arteev, Dmitri S.; Zavarin, Evgenii E.; Nikolaev, Andrey E.; Lundin, Wsevolod V.; Prasolov, Nikita D.; Yagovkina, Maria A.; Tsatsulnikov, Andrey F.; Fedotov, Sergey D.; Sokolov, Evgenii M.; Statsenko, Vladimir N.

Impact of Local Composition on the Emission Spectra of InGaN Quantum-Dot LEDs

NANOMATERIALS

IF4.3

2023-04-14

OAAI

Barettin, Daniele; Sakharov, Alexei V.; Tsatsulnikov, Andrey F.; Nikolaev, Andrey E.; Pecchia, Alessandro; Maur, Matthias Auf Der; Karpov, Sergey Yu.; Cherkashin, Nikolay

Electromechanically Coupled III-N Quantum Dots

NANOMATERIALS

IF4.3

2023-01-05

OAAI

Barettin, Daniele; Sakharov, Alexei V.; Tsatsulnikov, Andrey F.; Nikolaev, Andrey E.; Cherkashin, Nikolay

Scattering Analysis of AlGaN/AlN/GaN Heterostructures with Fe-Doped GaN Buffer

MATERIALS

IF3.2

2022-12-14

OAAI

Arteev, Dmitri S. S.; Sakharov, Alexei V. V.; Lundin, Wsevolod V. V.; Zavarin, Evgenii E. E.; Nikolaev, Andrey E. E.; Tsatsulnikov, Andrey F. F.; Ustinov, Viktor M. M.

Critical spatial disorder in InGaN resonant Bragg structures

APPLIED PHYSICS LETTERS

IF3.6

2022-07-25

PREAI

Ivanov, A. A.; Chaldyshev, V. V.; Ushanov, V. I.; Zavarin, E. E.; Sakharov, A. V.; Lundin, W. V.; Tsatsulnikov, A. F.

Temperature-dependent luminescent properties of dual-wavelength InGaN LEDs

JOURNAL OF LUMINESCENCE

IF3.6

2021-06-01

PREAI

Arteev, D. S.; Sakharov, A., V; Nikolaev, A. E.; Lundin, W., V; Tsatsulnikov, A. F.

Long coherent dynamics of localized excitons in (In,Ga) N/GaN quantum wells

PHYSICAL REVIEW B

IF3.7

2018-11-29

OAAI

Poltavtsev, S., V; Solovev, I. A.; Akimov, I. A.; Chaldyshev, V. V.; Lundin, W., V; Sakharov, A., V; Tsatsulnikov, A. F.; Yakovlev, D. R.; Bayer, M.

Superior color rendering with a phosphor-converted blue-cyan monolithic light-emitting diode

LASER & PHOTONICS REVIEWS

IF10

2016-11-22

OAAI

Titkov, Ilya E.; Yadav, Amit; Karpov, Sergey Yu.; Sakharov, Alexei V.; Tsatsulnikov, Andrey F.; Slight, Thomas J.; Gorodetsky, Andrei; Rafailov, Edik U.

Optical lattices of InGaN quantum well excitons

APPLIED PHYSICS LETTERS

IF3.6

2011-12-20

PREAI

Chaldyshev, V. V.; Bolshakov, A. S.; Zavarin, E. E.; Sakharov, A. V.; Lundin, W. V.; Tsatsulnikov, A. F.; Yagovkina, M. A.; Kim, Taek; Park, Youngsoo

Quantum dot origin of luminescence in InGaN-GaN structures

PHYSICAL REVIEW B

IF3.7

2002-10-04

106

PREAI

Krestnikov, IL; Ledentsov, NN; Hoffmann, A; Bimberg, D; Sakharov, AV; Lundin, WV; Tsatsul'nikov, AF; Usikov, AS; Alferov, ZI; Musikhin, YG; Gerthsen, D

Influence of metalorganic chemical vapor deposition growth conditions on In-rich nanoislands formation in InGaN/GaN structures

APPLIED PHYSICS LETTERS

IF3.6

2002-03-25

PREAI

Musikhin, YG; Gerthsen, D; Bedarev, DA; Bert, NA; Lundin, WV; Tsatsul'nikov, AF; Sakharov, AV; Usikov, AS; Alferov, ZI; Krestnikov, IL; Ledentsov, NN; Hoffmann, A; Bimberg, D

Tuning quantum dot properties by activated phase separation of an InGa(Al)As alloy grown on InAs stressors

PHYSICAL REVIEW B

IF3.7

2000-12-15

220

PREAI

Maximov, MV; Tsatsul'nikov, AF; Volovik, BV; Sizov, DS; Shernyakov, YM; Kaiander, IN; Zhukov, AE; Kovsh, AR; Mikhrin, SS; Ustinov, VM; Alferov, ZI; Heitz, R; Shchukin, VA; Ledentsov, NN; Bimberg, D; Musikhin, YG; Neumann, W

Optical anisotropy in vertically coupled quantum dots

PHYSICAL REVIEW B

IF3.7

1999-12-15

OAAI

Yu, P; Langbein, W; Leosson, K; Hvam, JM; Ledentsov, NN; Bimberg, D; Ustinov, VM; Egorov, AY; Zhukov, AE; Tsatsul'nikov, AF; Musikhin, YG

Optical and structural properties of InAs quantum dots in a GaAs matrix for a spectral range up to 1.7 μm

APPLIED PHYSICS LETTERS

IF3.6

1999-10-18

PREAI

Maximov, MV; Tsatsul'nikov, AF; Volovik, BV; Bedarev, DA; Egorov, AY; Zhukov, AE; Kovsh, AR; Bert, NA; Ustinov, VM; Kop'ev, PS; Alferov, ZI; Ledentsov, NN; Bimberg, D; Soshnikov, IP; Werner, P

Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates

APPLIED PHYSICS LETTERS

IF3.6

1999-09-27

118

PREAI

Zhukov, AE; Kovsh, AR; Maleev, NA; Mikhrin, SS; Ustinov, VM; Tsatsul'nikov, AF; Maximov, MV; Volovik, BV; Bedarev, DA; Shernyakov, YM; Kop'ev, PS; Alferov, ZI; Ledentsov, NN; Bimberg, D

Room-temperature photopumped InGaN/GaN/AlGaN vertical-cavity surface-emitting laser

APPLIED PHYSICS LETTERS

IF3.6

1999-08-30

PREAI

Krestnikov, IL; Lundin, WV; Sakharov, AV; Semenov, VA; Usikov, AS; Tsatsul'nikov, AF; Alferov, ZI; Ledentsov, NN; Hoffmann, A; Bimberg, D

Surface-mode lasing from stacked InGaN insertions in a GaN matrix

APPLIED PHYSICS LETTERS

IF3.6

1999-06-28

OAAI

Sakharov, AV; Lundin, WV; Krestnikov, IL; Semenov, VA; Usikov, AS; Tsatsul'nikov, AF; Musikhin, YG; Baidakova, MV; Alferov, ZI; Ledentsov, NN; Hoffmann, A; Bimberg, D

研究方向