Adam T. Neal - Publications, H-index & Citations

Adam T. Neal

United States Department of Defense

28H指数

99论文数

1.0W被引数

收录论文 20

发表时间

Epitaxial growth of α-(AlxGa1-x)2O3 by suboxide molecular-beam epitaxy at 1 μm/h

APL MATERIALS

IF4.5

2024-04-10

OAAI

Steele, Jacob; Azizie, Kathy; Pieczulewski, Naomi; Kim, Yunjo; Mou, Shin; Asel, Thaddeus J.; Neal, Adam T.; Jena, Debdeep; Xing, Huili G.; Muller, David A.; Onuma, Takeyoshi; Schlom, Darrell G.

Investigation of Si incorporation in (010) β-Ga2O3 films grown by plasma-assisted MBE using diluted disilane as Si source and suboxide Ga2O precursor

APPLIED PHYSICS LETTERS

IF3.6

2024-03-18

PREAI

Wen, Zhuoqun; Zhai, Xin; Lee, Cindy; Kosanovic, Stefan; Kim, Yunjo; Neal, Adam T.; Asel, Thaddeus; Mou, Shin; Ahmadi, Elaheh

Silicon-doped β-Ga2O3 films grown at 1 μm/h by suboxide molecular-beam epitaxy

APL MATERIALS

IF4.5

2023-04-03

OAAI

Azizie, Kathy; Hensling, Felix V. E.; Gorsak, Cameron A.; Kim, Yunjo; Pieczulewski, Naomi A.; Dryden, Daniel M.; Senevirathna, M. K. Indika; Coye, Selena; Shang, Shun-Li; Steele, Jacob; Vogt, Patrick; Parker, Nicholas A.; Birkholzer, Yorick A.; McCandless, Jonathan P.; Jena, Debdeep; Xing, Huili G.; Liu, Zi-Kui; Williams, Michael D.; Green, Andrew J.; Chabak, Kelson; Muller, David A.; Neal, Adam T.; Mou, Shin; Thompson, Michael O.; Nair, Hari P.; Schlom, Darrell G.

Controlled Si doping of β-Ga2O3 by molecular beam epitaxy

APPLIED PHYSICS LETTERS

IF3.6

2022-08-18

OAAI

McCandless, J. P.; Protasenko, V.; Morell, B. W.; Steinbrunner, E.; Neal, A. T.; Tanen, N.; Cho, Y.; Asel, T. J.; Mou, S.; Vogt, P.; Xing, H. G.; Jena, D.

β-Gallium oxide power electronics Β-氧化镓电力电子

APL MATERIALS

IF4.5

2022-02-07

322

OAAI

Green, Andrew J.; Speck, James; Xing, Grace; Moens, Peter; Allerstam, Fredrik; Gumaelius, Krister; Neyer, Thomas; Arias-Purdue, Andrea; Mehrotra, Vivek; Kuramata, Akito; Sasaki, Kohei; Watanabe, Shinya; Koshi, Kimiyoshi; Blevins, John; Bierwagen, Oliver; Krishnamoorthy, Sriram; Leedy, Kevin; Arehart, Aaron R.; Neal, Adam T.; Mou, Shin; Ringel, Steven A.; Kumar, Avinash; Sharma, Ankit; Ghosh, Krishnendu; Singisetti, Uttam; Li, Wenshen; Chabak, Kelson; Liddy, Kyle; Islam, Ahmad; Rajan, Siddharth; Graham, Samuel; Choi, Sukwon; Cheng, Zhe; Higashiwaki, Masataka

Determination of critical parameters for design of semiconductor hyperbolic metamaterials

OPTICAL MATERIALS

IF4.2

2021-02-01

OAAI

Eyink, K. G.; Haugan, H. J.; Neal, A. T.; Mahalingam, K.; Pustovit, V; Urbas, A.

MOCVD growth of high purity Ga2O3 epitaxial films using trimethylgallium precursor

APPLIED PHYSICS LETTERS

IF3.6

2020-12-28

116

OAAI

Seryogin, George; Alema, Fikadu; Valente, Nicholas; Fu, Houqiang; Steinbrunner, Erich; Neal, Adam T.; Mou, Shin; Fine, Aaron; Osinsky, Andrei

Zeeman spin-splitting in the (010) β-Ga2O3 two-dimensional electron gas

APPLIED PHYSICS LETTERS

IF3.6

2019-12-23

OAAI

Neal, Adam T.; Zhang, Yuewei; Elhamri, Said; Rajan, Siddharth; Mou, Shin

Donors and deep acceptors in β-Ga2O3

APPLIED PHYSICS LETTERS

IF3.6

2018-08-06

254

OAAI

Neal, Adam T.; Mou, Shin; Rafique, Subrina; Zhao, Hongping; Ahmadi, Elaheh; Speck, James S.; Stevens, Kevin T.; Blevins, John D.; Thomson, Darren B.; Moser, Neil; Chabak, Kelson D.; Jessen, Gregg H.

Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures

APPLIED PHYSICS LETTERS

IF3.6

2018-04-24

297

PREAI

Zhang, Yuewei; Neal, Adam; Xia, Zhanbo; Joishi, Chandan; Johnson, Jared M.; Zheng, Yuanhua; Bajaj, Sanyam; Brenner, Mark; Dorsey, Donald; Chabak, Kelson; Jessen, Gregg; Hwang, Jinwoo; Mou, Shin; Heremans, Joseph P.; Rajan, Siddharth

Incomplete Ionization of a 110 meV Unintentional Donor in β-Ga2O3 and its Effect on Power Devices

SCIENTIFIC REPORTS

IF3.9

2017-10-16

100

OAAI

Neal, Adam T.; Mou, Shin; Lopez, Roberto; Li, Jian V.; Thomson, Darren B.; Chabak, Kelson D.; Jessen, Gregg H.

P-type conduction in two-dimensional MoS2 via oxygen incorporation

APPLIED PHYSICS LETTERS

IF3.6

2017-05-08

OAAI