Saeed Jahdi

University of Bristol

H指数:18

被引数:1,264

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荣誉奖项

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Linear Mode Robustness Analysis of 1200V Silicon and SiC MOSFETs

1200V硅和碳化硅MOSFET的线性模式鲁棒性分析

IEEE Transactions on Power Electronics

IF6.5

2026-07-220

PRE

GHz-Bandwidth Twin-Coil Magnetic Current Sensors for Compact Switching Circuits

GHz带宽双线圈磁电流传感器用于紧凑型开关电路

IEEE Transactions on Power Electronics

IF6.5

2026-01-120

PRE

High-Fidelity Device Modeling of SiC MOSFETs for Active Gate Drive Optimization

碳化硅MOSFET的高保真度器件建模用于主动栅极驱动优化

IEEE Transactions on Power Electronics

IF6.5

2025-11-270

PRE

SiC MOSFET Hybrid Switches With Reverse Conducting IGBTs: Loss and Surge Current Analysis

SiC MOSFET混合开关与反向导通IGBT：损耗和浪涌电流分析

IEEE Transactions on Power Electronics

IF6.5

2025-01-010

Analysis of Avalanche UIS Ruggedness of Vertical Power Silicon and SiC NPN BJTs

垂直功率硅和SiC NPN BJT的雪崩UIS稳健性分析

IEEE Open Journal of Power Electronics

IF3.9

2025-01-010

OAAI

Impact of Biasing Effects on Turn-On Switching Transients of GaN Power eHEMTs: Repeatability and Consistency

偏置效应对GaN功率eHEMT开通开关瞬态的影响：重复性与一致性

IEEE Open Journal of Industry Applications

IF3.3

2025-01-010

Dynamics of Charge Transients in High Voltage Silicon and SiC NPN BJT Under High Injection Levels

IEEE OPEN JOURNAL OF POWER ELECTRONICS

IF3.9

2025-01-010

Impact of Intrinsic Parameter Dispersion on Short-Circuit Reliability of Parallel-Connected Planar and Trench SiC MOSFETs

本征参数离散对并联平面和沟槽SiC mosfet短路可靠性的影响

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2024-12-012

PRE

β-Ga203 in Power Electronics Converters: Opportunities & Challenges

IEEE OPEN JOURNAL OF POWER ELECTRONICS

IF3.9

2024-01-0115

High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs

IEEE OPEN JOURNAL OF INDUSTRY APPLICATIONS

IF3.3

2024-01-010

Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2023-09-0112

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

ENERGIES

IF3.2

2023-05-285

Electrothermal Power Cycling to Failure of Discrete Planar, Symmetrical Double-Trench and Asymmetrical Trench SiC MOSFETs

电热功率循环到离散平面，对称双沟槽和非对称沟槽SiC mosfet的故障

IEEE OPEN JOURNAL OF POWER ELECTRONICS

IF3.9

2023-01-012

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

IEEE OPEN JOURNAL OF THE INDUSTRIAL ELECTRONICS SOCIETY

IF4.3

2022-01-012

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

BTI应力对称和不对称双槽SiC功率mosfet中串扰引起的击穿

IEEE OPEN JOURNAL OF THE INDUSTRIAL ELECTRONICS SOCIETY

IF4.3

2022-01-015

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2020-09-01123

OAAI

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2020-06-017

OAAI

Temperature and Switching Rate Dependence of Crosstalk in Si-IGBT and SiC Power Modules

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2016-02-01131

OAAI

Compact Electrothermal Reliability Modeling and Experimental Characterization of Bipolar Latchup in SiC and CoolMOS Power MOSFETs

SiC和CoolMOS功率mosfet中双极性闭锁的紧凑型电热可靠性建模和实验表征

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2015-12-0128

OAAI

Analytical Modeling of Switching Energy of Silicon Carbide Schottky Diodes as Functions of dIDS/dt and Temperature

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2015-06-0116

OAAI

Saeed Jahdi

个人简介

教育背景

工作经历

荣誉奖项

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