Olayiwola Alatise

university of warwick

H指数:26

被引数:2,926

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Linear Mode Robustness Analysis of 1200V Silicon and SiC MOSFETs

1200V硅和碳化硅MOSFET的线性模式鲁棒性分析

IEEE Transactions on Power Electronics

IF6.5

2026-07-220

PRE

Performance Evaluation of Different Diode Technologies of 3.3-kV SiC MOSFETs

不同二极管技术的3.3-kV SiC MOSFETs性能评估

IEEE Transactions on Electron Devices

IF3.2

2026-05-050

PRE

Second life potential of electric vehicle power electronics for more circular economies

电动汽车电力电子设备的二次生命周期潜力及其在更循环经济中的应用

RENEWABLE & SUSTAINABLE ENERGY REVIEWS

IF16.3

2025-03-010

OAAI

SiC MOSFET Hybrid Switches With Reverse Conducting IGBTs: Loss and Surge Current Analysis

SiC MOSFET混合开关与反向导通IGBT：损耗和浪涌电流分析

IEEE Transactions on Power Electronics

IF6.5

2025-01-010

Switching and Frequency Response Assessment of Photovoltaic Drivers and Their Potential for Different Applications

MICROMACHINES

IF3

2024-06-270

OAAI

High-Energy Dynamic Avalanche to Failure by Incremental Source-Voltage Increase in Symmetric Double-Trench & Asymmetric Trench SiC MOSFETs

IEEE OPEN JOURNAL OF INDUSTRY APPLICATIONS

IF3.3

2024-01-010

An Online Unified Delay and Slew Rate Regulation for Current Sharing in Paralleled SiC Power Modules With Active Gate Drivers

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2024-01-010

PRE

Degradation Analysis of Planar, Symmetrical and Asymmetrical Trench SiC MOSFETs Under Repetitive Short Circuit Impulses

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2023-09-0112

A Review of Power Electronic Devices for Heavy Goods Vehicles Electrification: Performance and Reliability

ENERGIES

IF3.2

2023-05-285

Impact of Carriers Injection Level on Transients of Discrete and Paralleled Silicon and 4H-SiC NPN BJTs

IEEE OPEN JOURNAL OF THE INDUSTRIAL ELECTRONICS SOCIETY

IF4.3

2022-01-012

Crosstalk Induced Shoot-Through in BTI-Stressed Symmetrical & Asymmetrical Double-Trench SiC Power MOSFETs

BTI应力对称和不对称双槽SiC功率mosfet中串扰引起的击穿

IEEE OPEN JOURNAL OF THE INDUSTRIAL ELECTRONICS SOCIETY

IF4.3

2022-01-015

Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS

IF4.5

2021-03-0125

PREAI

Impact of BTI-Induced Threshold Voltage Shifts in Shoot-Through Currents From Crosstalk in SiC MOSFETs

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2021-03-0128

OAAI

Performance and Reliability Review of 650 V and 900 V Silicon and SiC Devices: MOSFETs, Cascode JFETs and IGBTs

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2020-09-01123

OAAI

The Potential of SiC Cascode JFETs in Electric Vehicle Traction Inverters

IEEE TRANSACTIONS ON TRANSPORTATION ELECTRIFICATION

IF8.3

2019-12-0123

OAAI

A Novel Non-Intrusive Technique for BTI Characterization in SiC MOSFETs

一种用于SiC mosfet中BTI表征的新型非侵入式技术

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2019-06-0162

OAAI

An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

SiC功率mosfet温度敏感电参数的研究

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2017-10-01103

OAAI

Evaluation of SiC Schottky Diodes Using Pressure Contacts

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS

IF7.2

2017-10-0112

OAAI

Experimental Investigation on the Effects of Narrow Junction Temperature Cycles on Die-Attach Solder Layer in an IGBT Module

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2017-02-0198

PREAI

Improved Testing Capability of the Model-Assisted Testing Scheme for a Modular Multilevel Converter

IEEE TRANSACTIONS ON POWER ELECTRONICS

IF6.5

2016-11-0118

PREAI

Olayiwola Alatise

个人简介

教育背景

工作经历

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