Brendan Gunning - Publications, H-index & Citations

Brendan Gunning

university system of georgia

17H指数

95论文数

873被引数

收录论文 15

发表时间

Tunnel junction-enabled monolithically integrated GaN micro-light emitting transistor

APPLIED PHYSICS LETTERS

IF3.6

2024-05-30

OAAI

Rahman, Sheikh Ifatur; Awwad, Mohammad; Joishi, Chandan; Jamal-Eddine, Zane; Gunning, Brendan; Armstrong, Andrew; Rajan, Siddharth

Microstructural evolution of extended defects in 25 μm thick GaN homo-epitaxial layers

APPLIED PHYSICS LETTERS

IF3.6

2023-06-12

OAAI

Liao, Michael E.; Mahadik, Nadeemullah A.; Gallagher, James C.; Gunning, Brendan P.; Kaplar, Robert J.; Anderson, Travis J.

Using machine learning with optical profilometry for GaN wafer screening

SCIENTIFIC REPORTS

IF3.9

2023-02-27

OAAI

Gallagher, James C.; Mastro, Michael A.; Ebrish, Mona A.; Jacobs, Alan G.; Gunning, Brendan P.; Kaplar, Robert J.; Hobart, Karl D.; Anderson, Travis J.

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

SCIENTIFIC REPORTS

IF3.9

2022-01-13

OAAI

Gallagher, James C.; Ebrish, Mona A.; Porter, Matthew A.; Jacobs, Alan G.; Gunning, Brendan P.; Kaplar, Robert J.; Hobart, Karl D.; Anderson, Travis J.

Ultralow Voltage GaN Vacuum Nanodiodes in Air 空气中的超低电压GaN真空纳米二极管

NANO LETTERS

IF9.1

2021-02-23

OAAI

Sapkota, Keshab R.; Leonard, Francois; Talin, A. Alec; Gunning, Brendan P.; Kazanowska, Barbara A.; Jones, Kevin S.; Wang, George T.

Low voltage drop tunnel junctions grown monolithically by MOCVD

APPLIED PHYSICS LETTERS

IF3.6

2021-02-02

OAAI

Jamal-Eddine, Zane; Hasan, Syed M. N.; Gunning, Brendan; Chandrasekar, Hareesh; Crawford, Mary; Armstrong, Andrew; Arafin, Shamsul; Rajan, Siddharth

All-MOCVD-grown gallium nitride diodes with ultra-low resistance tunnel junctions

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2021-01-29

OAAI

Hasan, Syed M. N.; Gunning, Brendan P.; J-Eddine, Zane; Chandrasekar, Hareesh; Crawford, Mary H.; Armstrong, Andrew; Rajan, Siddharth; Arafin, Shamsul

Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments

APPLIED PHYSICS LETTERS

IF3.6

2020-08-28

OAAI

Foster, Geoffrey M.; Koehler, Andrew; Ebrish, Mona; Gallagher, James; Anderson, Travis; Noesges, Brenton; Brillson, Leonard; Gunning, Brendan; Hobart, Karl D.; Kub, Francis

Fully transparent GaN homojunction tunnel junction-enabled cascaded blue LEDs

APPLIED PHYSICS LETTERS

IF3.6

2020-08-04

OAAI

Jamal-Eddine, Zane; Hasan, Syed M. N.; Gunning, Brendan; Chandrasekar, Hareesh; Crawford, Mary; Armstrong, Andrew; Arafin, Shamsul; Rajan, Siddharth

Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron- and hole-blocking layers

APPLIED PHYSICS LETTERS

IF3.6

2018-07-24

PREAI

Huang, Xuanqi; Chen, Hong; Fu, Houqiang; Baranowski, Izak; Montes, Jossue; Yang, Tsung-Han; Fu, Kai; Gunning, Brendan P.; Koleske, Daniel D.; Zhao, Yuji

Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress

APPLIED PHYSICS LETTERS

IF3.6

2017-12-07

PREAI

Huang, Xuanqi; Fu, Houqiang; Chen, Hong; Lu, Zhijian; Baranowski, Izak; Montes, Jossue; Yang, Tsung-Han; Gunning, Brendan P.; Koleske, Dan; Zhao, Yuji

Metalorganic vapor phase epitaxy of AlN on sapphire with low etch pit density

APPLIED PHYSICS LETTERS

IF3.6

2017-06-07

OAAI

Koleske, D. D.; Figiel, J. J.; Alliman, D. L.; Gunning, B. P.; Kempisty, J. M.; Creighton, J. R.; Mishima, A.; Ikenaga, K.

Liquid Phase Electro-Epitaxy of Memristive LiNbO2 Crystals

CRYSTAL GROWTH & DESIGN

IF3.4

2014-04-25

PREAI

Greenlee, Jordan D.; Shank, Joshua C.; Tellekamp, M. Brooks; Gunning, Brendan P.; Fabien, Chloe A. M.; Doolittle, W. Alan