Yasuto Hijikata - Publications, H-index & Citations

Yasuto Hijikata

Saitama University

20H指数

184论文数

1.8K被引数

收录论文 10

发表时间

Impact of formation process on the radiation properties of single-photon sources generated on SiC crystal surfaces 形成过程对SiC晶体表面单光子源辐射特性的影响

APPLIED PHYSICS LETTERS

IF3.6

2021-05-21

OAAI

Hijikata, Yasuto; Komori, Shota; Otojima, Shunsuke; Matsushita, Yu-Ichiro; Ohshima, Takeshi

Carrier dynamics of silicon vacancies of SiC under simultaneous optically and electrically excitations

APPLIED PHYSICS LETTERS

IF3.6

2021-01-12

PREAI

Yamazaki, Yuichi; Chiba, Yoji; Sato, Shin-ichiro; Makino, Takahiro; Yamada, Naoto; Satoh, Takahiro; Kojima, Kazutoshi; Hijikata, Yasuto; Tsuchida, Hidekazu; Hoshino, Norihiro; Lee, Sang-Yun; Ohshima, Takeshi

Radiation Response of Negative Gate Biased SiC MOSFETs

MATERIALS

IF3.2

2019-08-27

OAAI

Takeyama, Akinori; Makino, Takahiro; Okubo, Shuichi; Tanaka, Yuki; Yoshie, Toru; Hijikata, Yasuto; Ohshima, Takeshi

First-principles study of oxygen-related defects on 4H-SiC surface: The effects of surface amorphous structure

APPLIED SURFACE SCIENCE

IF6.9

2019-01-01

PREAI

Matsushita, Yu-ichiro; Furukawa, Yoritaka; Hijikata, Yasuto; Ohshima, Takeshi

Room Temperature Electrical Control of Single Photon Sources at 4H-SiC Surface 4H-SiC表面单光子源的室温电控制

ACS PHOTONICS

IF6.7

2018-05-23

PREAI

Sato, Shin-ichiro; Honda, Tomoya; Makino, Takahiro; Hijikata, Yasuto; Lee, Sang-Yun; Ohshima, Takeshi

Three-Dimensional Proton Beam Writing of Optically Active Coherent Vacancy Spins in Silicon Carbide 碳化硅中光学活性相干空位自旋的三维质子束写入

NANO LETTERS

IF9.1

2017-04-10

PREAI

Kraus, H.; Simin, D.; Kasper, C.; Suda, Y.; Kawabata, S.; Kada, W.; Honda, T.; Hijikata, Y.; Ohshima, T.; Dyakonov, V.; Astakhov, G. V.

Effect of gamma-ray irradiation on the device process-induced defects in 4H-SiC epilayers

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2016-11-01

PREAI

Miyazaki, T.; Makino, T.; Takeyama, A.; Onoda, S.; Ohshima, T.; Tanaka, Y.; Kandori, M.; Yoshie, T.; Hijikata, Y.

Unified theory of silicon carbide oxidation based on the Si and C emission model

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-05-05

OAAI

Goto, Daisuke; Hijikata, Yasuto

Optical and electrical characterizations of 4H-SiC-oxide interfaces by spectroscopic ellipsometry and capacitance-voltage measurements

APPLIED SURFACE SCIENCE

IF6.9

2009-07-01

PREAI

Hashimoto, Hideki; Hijikata, Yasuto; Yaguchi, Hiroyuki; Yoshida, Sadafumi

Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films

APPLIED SURFACE SCIENCE

IF6.9

2001-12-01

129

PREAI

Hijikata, Y; Yaguchi, H; Yoshikawa, M; Yoshida, S

研究方向