Sushanta Bordoloi - Publications, H-index & Citations

Sushanta Bordoloi

national institute of technology mizoram

8H指数

47论文数

635被引数

收录论文 11

发表时间

Transverse Electric Mode (TE₁₀) Excited 45° Slant Linear Polarized Single Feed Microstrip Antenna with Wideband High Gain for 5G n78 BTS Systems TE₁₀激励45°斜向线极化单馈微带天线，具有宽带高增益，适用于5G n78基站系统

IEEE Antennas and Wireless Propagation Letters

IF4.8

2026-09-17

PREAI

Souvik Halder; Abhijyoti Ghosh; Sudipta Chattopadhyay; Sushanta Bordoloi

Simulation Based Design and Characterization of a 150 nm GaN HEMT Small-Signal Model for High-Frequency and Low-Noise Applications 基于仿真的150 nm GaN HEMT小信号模型的高频和低噪声应用设计与表征

Advanced Theory and Simulations

IF2.9

2026-09-17

PREAI

Vijay Maitra; Ellapu Bhanu Prakash; Anil Prasad Dadi; Tathagata Ghose; Pranjal Barman; Ashok Ray; Sushanta Bordoloi

Investigating the Effect of AlGaN Back Barrier in Buffer Free AlGaN/GaN HEMTs with Stacked HfO2/SiN Passivation for High Frequency Applications 研究用于高频应用的堆叠HfO2/SiN钝化缓冲层自由AlGaN/GaN HEMT中AlGaN背势垒的影响

Semiconductors

IF0.6

2026-05-01

PREAI

Dadi, Anil Prasad; Prakash, Ellapu Bhanu; Maitra, Vijay; Ghose, Tathagata; Ray, Ashok; Bordoloi, Sushanta

Cap-layer engineering in AlGaN/GaN HEMTs with AlN buffer for enhanced breakdown and Johnson Figure of Merit

materials science and engineering: b

IF0

2026-01-22

PREAI

Ellapu Bhanu Prakash; Anil Prasad Dadi; Vijay Maitra; Tathagata Ghose; Ashok Ray; Sushanta Bordoloi

Enhancing Breakdown Voltage and Switching Performance in AlGaN/GaN HEMTs via GaN Cap and Field Plate Co-Design 通过GaN帽层和场板协同设计提升AlGaN/GaN HEMTs的击穿电压和开关性能

Semiconductors

IF0.6

2025-12-01

PREAI

Prakash, Ellapu Bhanu; Dadi, Anil Prasad; Maitra, Vijay; Ghose, Tathagata; Barman, Pranjal; Ray, Ashok; Bordoloi, Sushanta

Design Optimization of AlGaN/GaN HEMT Biosensors for Enhanced Biomolecule Sensitivity: Gate Dielectric and Spacing Effects

Semiconductors

IF0.6

2025-11-01

PREAI

Singh, Sarita; Das, Alokojjwal; Bordoloi, Sushanta; Ray, Ashok

Investigating the Temperature-Induced Variations on the DC, Linearity Distortion and Analog/RF Performance of Ge-Source DG-TFETs 研究温度对Ge源双栅极隧结场效应晶体管（DG-TFETs）的直流特性、线性失真及模拟/射频性能的影响

Advanced Theory and Simulations

IF2.9

2025-10-30

PREAI

Ellapu Bhanu Prakash; Bhukya Harini; Ashok Ray; Sushanta Bordoloi

A novel AlGaN/GaN HEMT with no underlying buffer utilizing a stacked (HfO2/SiN) passivation architecture for enhanced high-power and high-frequency performance 一种新型AlGaN/GaN HEMT，采用堆叠(HfO2/SiN)钝化结构，无底层缓冲层，以提升高功率和高频率性能

AEU - International Journal of Electronics and Communications

IF0

2025-10-30

PREAI

Anil Prasad Dadi; Bhanu Prakash Ellapu; Vijay Maitra; Ashok Ray; Sushanta Bordoloi

Renewable energy integration with electric vehicle technology: A review of the existing smart charging approaches 可再生能源与电动汽车技术的集成: 现有智能充电方法的回顾

RENEWABLE & SUSTAINABLE ENERGY REVIEWS

IF16.3

2023-09-01

OAAI

Barman, Pranjal; Dutta, Lachit; Bordoloi, Sushanta; Kalita, Anamika; Buragohain, Pronamika; Bharali, Swapna; Azzopardi, Brian

On-board Health Prognosis of Lithium-Ion Battery Based on the Estimation of Internal Resistance Under Resistive and Inductive Loading Conditions 基于电阻和电感负载条件下内阻估计的锂离子电池车载健康预测

2022 SECOND INTERNATIONAL CONFERENCE ON ADVANCES IN ELECTRICAL, COMPUTING, COMMUNICATION AND SUSTAINABLE TECHNOLOGIES (ICAECT)

IF0

2022-04-21

PREAI

Barman, Pranjal; Bordoloi, Sushanta; Hazarika, Chinmayee

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification 对具有栅极几何形状修改的AlGaN/GaN hemt中可靠性方面的反思

IEEE ACCESS

IF3.6

2021-01-01

OAAI

Bordoloi, Sushanta; Ray, Ashok; Trivedi, Gaurav

研究方向